US6555946B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Acoustic wave device and process for forming the same
Assignee: NXP USA Inc
•
Filing: 2000-07-24
•
Granted: 2003-04-29
•
Expires: 2020-07-24
Abstract
Abstract High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
Inventors
- 👤 Jeffrey M. Finder
- 👤 Kurt Eisenbeiser
- 👤 Jamal Ramdani
- 👤 Ravindranath Droopad
- 👤 William Jay Ooms
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:05
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/15; H03H9/17; H03H9/171; H03H9/172; H03H9/174; H03H3/00; H03H3/007; H03H3/02; H03H3/08; H03H9/02; H03H9/02535; H03H9/02543; H03H9/02574; H03H9/05; H03H9/0538; H03H9/0542; H10; H10N; H10N39/00; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10N30/079
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
79 words
An acoustic wave device comprising: a monocrystalline silicon substrate; an MOS circuit formed at least partially in the silicon substrate; a monocrystalline perovskite layer epitaxially formed overlying the silicon substrate; an amorphous interface layer formed underlying the monocrystalline perovskite layer; a layer of monocrystalline piezoelectric material having a surface epitaxially formed overlying the monocrystalline perovskite layer; a transducer formed on the surface of the layer of monocrystalline piezoelectric material; and an interconnection coupling the MOS circuit and the transducer.
Claim 2
Dependent Claim
79 words
An acoustic wave device comprising: a monocrystalline silicon substrate; an MOS circuit formed at least partially in the silicon substrate; a monocrystalline perovskite layer epitaxially formed overlying the silicon substrate; an amorphous interface layer formed underlying the monocrystalline perovskite layer; a layer of monocrystalline piezoelectric material having a surface epitaxially formed overlying the monocrystalline perovskite layer; a transducer formed on the surface of the layer of monocrystalline piezoelectric material; and an interconnection coupling the MOS circuit and the transducer.
Claim 3
Dependent Claim
41 words
The device of claim 1 wherein the monocrystalline perovskite layer comprises an insulator selected from the group consisting of alkaline earth metal titanates, zirconates, hafnates, tantalates, ruthenates, niobates and vanadates, tin based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide.
Claim 4
Dependent Claim
17 words
The device of claim 2 wherein the layer of monocrystalline piezoelectric material comprises a lead based perovskite.
Claim 5
Dependent Claim
16 words
The device of claim 3 wherein the layer of monocrystalline piezoelectric material comprises (Pb,Zr)TiO 3 .
Claim 6
Dependent Claim
24 words
The device of claim 4 further comprising a monocrystalline buffer layer formed between the monocrystalline perovskite layer and the layer of monocrystalline piezoelectric material.
Claim 7
Dependent Claim
15 words
The device of claim 5 wherein the buffer layer comprises a monocrystalline conductive oxide layer.
Claim 8
Dependent Claim
26 words
The device of claim 6 wherein the monocrystalline conductive oxide layer comprises a material selected from the group consisting of (La,Sr)CoO 3 and SrVO 3 .
Claim 9
Dependent Claim
13 words
The device of claim 2 wherein the amorphous interface layer comprises silicon oxide.
Claim 10
Dependent Claim
14 words
The device of claim 1 wherein the monocrystalline perovskite layer comprises (Sr,Ba)TiO 3 .
Claim 11
Dependent Claim
12 words
The device of claim 1 wherein the transducer comprises an interdigitated transducer.
Claim 12
Dependent Claim
69 words
A bulk acoustic wave device comprising: a monocrystalline silicon substrate; an MOS circuit formed at least partially in the silicon substrate; a monocrystalline perovskite layer epitaxially formed overlying the silicon substrate; a monocrystalline conductive oxide layer epitaxially formed overlying the monocrystalline perovskite layer; a layer of monocrystalline piezoelectric material epitaxially formed overlying the monocrystalline conductive oxide layer; and a conductive electrode formed overlying the layer of monocrystalline piezoelectric material.
Claim 13
Dependent Claim
69 words
A bulk acoustic wave device comprising: a monocrystalline silicon substrate; an MOS circuit formed at least partially in the silicon substrate; a monocrystalline perovskite layer epitaxially formed overlying the silicon substrate; a monocrystalline conductive oxide layer epitaxially formed overlying the monocrystalline perovskite layer; a layer of monocrystalline piezoelectric material epitaxially formed overlying the monocrystalline conductive oxide layer; and a conductive electrode formed overlying the layer of monocrystalline piezoelectric material.
Claim 14
Dependent Claim
24 words
The device of claim 11 wherein the layer of monocrystalline piezoelectric material has a predetermined thickness to determine a resonant frequency of the device.
Claim 15
Dependent Claim
20 words
The device of claim 12 wherein the thickness is in the range of about 100 nm to about 5000 nm.
Claim 16
Dependent Claim
17 words
The device of claim 12 wherein the layer of monocrystalline piezoelectric material comprises a lead based perovskite.
Claim 17
Dependent Claim
16 words
The device of claim 14 wherein the layer of monocrystalline piezoelectric material comprises (Pb,Zr)TiO 3 .
Claim 18
Dependent Claim
24 words
The device of claim 12 further comprising a monocrystalline buffer layer formed between the monocrystalline perovskite layer and the layer of monocrystalline piezoelectric material.
Claim 19
Dependent Claim
14 words
The device of claim 16 wherein the buffer layer comprises a monocrystalline conductive oxide.
Claim 20
Dependent Claim
25 words
The device of claim 17 wherein the monocrystalline conductive oxide comprises a material selected from the group consisting of (La,Sr)CoO 3 and SrVO 3 .
Claim 21
Dependent Claim
17 words
The device of claim 11 further comprising an amorphous interface layer formed underlying the monocrystalline perovskite layer.
Claim 22
Dependent Claim
41 words
The device of claim 11 wherein the monocrystalline perovskite layer comprises an insulator selected from the group consisting of alkaline earth metal titanates, zirconates, hafnates, tantalates, ruthenates, niobates and vanadates, tin based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide.
Claim 23
Dependent Claim
14 words
The device of claim 11 wherein the monocrystalline perovskite layer comprises (Sr,Ba)TiO 3 .
Claim 24
Dependent Claim
25 words
The device of claim 11 wherein the monocrystalline conductive oxide comprises a material selected from the group consisting of (La,Sr)CoO 3 and SrVO 3 .
Claim 25
Dependent Claim
28 words
The device of claim 11 further comprising interconnect metallization coupling the MOS circuit and the conductive electrode and coupling the MOS circuit and the monocrystalline conductive oxide layer.
Claim 26
Dependent Claim
125 words
A bulk acoustic wave device comprising: a monocrystalline silicon substrate having a front surface and a rear surface; a MOS circuit formed at least partially in the silicon substrate; a monocrystalline perovskite layer epitaxially formed overlying the front surface of the silicon substrate; a layer of monocrystalline piezoelectric material epitaxially formed overlying the monocrystalline perovskite layer, the layer of monocrystalline piezoelectric material having an upper surface and a lower surface, the lower surface facing the monocrystalline perovskite layer; a concave recess etched in the rear surface of the silicon substrate and extending through the monocrystalline substrate; a first conductive electrode contacting the lower surface of the monocrystalline piezoelectric material; and a second conductive electrode contacting the upper surface of the layer of monocrystalline piezoelectric material.
Claim 27
Dependent Claim
125 words
A bulk acoustic wave device comprising: a monocrystalline silicon substrate having a front surface and a rear surface; a MOS circuit formed at least partially in the silicon substrate; a monocrystalline perovskite layer epitaxially formed overlying the front surface of the silicon substrate; a layer of monocrystalline piezoelectric material epitaxially formed overlying the monocrystalline perovskite layer, the layer of monocrystalline piezoelectric material having an upper surface and a lower surface, the lower surface facing the monocrystalline perovskite layer; a concave recess etched in the rear surface of the silicon substrate and extending through the monocrystalline substrate; a first conductive electrode contacting the lower surface of the monocrystalline piezoelectric material; and a second conductive electrode contacting the upper surface of the layer of monocrystalline piezoelectric material.
Claim 28
Dependent Claim
23 words
The device of claim 24 further comprising interconnect metallization coupling the first conductive electrode and the second conductive electrode to the MOS circuit.
Claim 29
Dependent Claim
80 words
An acoustic wave device comprising: a monocrystalline silicon substrate; a MOS circuit formed at least partially in the silicon substrate; a first monocrystalline layer comprising (Sr,Ba)TiO 3 epitaxially formed overlying the silicon substrate; an amorphous silicon oxide interface layer formed underlying the first monocrystalline layer; a second monocrystalline layer comprising (Pb,Zr)TiO 3 having a surface epitaxially formed overlying the first monocrystalline layer; an interdigitated transducer formed on the surface; and interconnect metallization coupling the MOS circuit and the interdigitated transducer.
Claim 30
Dependent Claim
80 words
An acoustic wave device comprising: a monocrystalline silicon substrate; a MOS circuit formed at least partially in the silicon substrate; a first monocrystalline layer comprising (Sr,Ba)TiO 3 epitaxially formed overlying the silicon substrate; an amorphous silicon oxide interface layer formed underlying the first monocrystalline layer; a second monocrystalline layer comprising (Pb,Zr)TiO 3 having a surface epitaxially formed overlying the first monocrystalline layer; an interdigitated transducer formed on the surface; and interconnect metallization coupling the MOS circuit and the interdigitated transducer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-04-28 | 2006-10-28 | 2007-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-04-28 | 2010-10-28 | 2011-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-04-28 | 2014-10-28 | 2015-04-29 | $7700.00 | Window Closed / Lapsed |