Abstract A lamination of films is comprised of at least two film layers wherein a first film with the smallest internal stress is provided for the first layer directly on the substrate, and a second film is provided with the second smallest amount of internal stress for the second layer on the first layer, and when more than two layers are provided, additional layers of films are provided with increasing magnitude of internal stress, in sequence, in the direction of lamination from the side of the substrate. In accordance with one aspect, the hydrogen concentration of a silicon nitride layer is controlled to obtain optimum properties of the silicon nitride layer as a buffer layer between a carbon layer and an oxide substrate.
A method for forming a carbon film on a substrate made of an oxide material comprising the steps of: forming a silicon nitride layer containing hydrogen at 2-28 atomic % on a surface of said substrate; and forming a carbon layer on said silicon nitride layer.
Claim 2
Independent Claim
46 words
A method for forming a carbon film on a substrate made of an oxide material comprising the steps of: forming a silicon nitride layer containing hydrogen at 2-28 atomic % on a surface of said substrate; and forming a carbon layer on said silicon nitride layer.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said silicon nitride is formed by vapor phase deposition method utilizing SiH 4 and N 2 gases.
Claim 4
Dependent Claim
26 words
The method of claim 2 wherein the volume ratio of said SiH 4 and N 2 gases (SiH 4 /N 2 ) is 1/100 to 25/100.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein said silicon nitride is formed by vapor phase deposition method utilizing SiH 4 and NH 3 gases.
Claim 6
Dependent Claim
29 words
The method of claim 1 wherein said silicon nitride layer is formed by vapor phase deposition utilizing SiH 2 Cl 2 and either NH 3 or N 2 gases.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein said oxide material is selected from the group consisting of a magnetic material, a ceramic material and glass.
Claim 8
Dependent Claim
21 words
The method of claim 6 wherein the substrate made of said magnetic material is a magnetic disc or optical magnetic disc.
Claim 9
Dependent Claim
22 words
The method of claim 1 wherein the thickness of said silicon nitride layer is 15-25% of the thickness of said carbon layer.
Claim 10
Dependent Claim
16 words
The method of claim 1 wherein the thickness of said silicon nitride layer is 30-3000 angstroms.
Claim 11
Dependent Claim
16 words
The method of claim 1 wherein said carbon layer comprises a diamond-like carbon or crystalline carbon.