US4699801A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1986-02-26
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Granted: 1987-10-13
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Expires: 2006-02-26
Abstract
Abstract A semiconductor device is produced in such a manner that light having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film is formed on the substrate in accordance with a chemical vapor deposition method.
Inventors
- 👤 Hitoshi Ito
- 👤 Takahiko Moriya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:38
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/43; H10P14/432; H10P34/00; H10P34/40; H10P34/42; H10P34/422
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
92 words
A method for producing a semiconductor device comprising the steps of preparing a semiconductor substrate, partially covering said semiconductor substrate with an insulating layer, contacting the semiconductor substrate with a reactive gas and selectively forming a thin film on a surface of the substrate by selective chemical vapor deposition, including irradiating a light beam of a 400-1000 nm wavelength onto an entire surface of the substrate to activate the reactive gas near a portion of the surface of the substrate and heating the substrate to a temperature of 300° to 800° C.
Claim 2
Independent Claim
92 words
A method for producing a semiconductor device comprising the steps of preparing a semiconductor substrate, partially covering said semiconductor substrate with an insulating layer, contacting the semiconductor substrate with a reactive gas and selectively forming a thin film on a surface of the substrate by selective chemical vapor deposition, including irradiating a light beam of a 400-1000 nm wavelength onto an entire surface of the substrate to activate the reactive gas near a portion of the surface of the substrate and heating the substrate to a temperature of 300° to 800° C.
Claim 3
Dependent Claim
62 words
A method according to claim 1, wherein formation of said thin film is effected by depositing a refractory metal onto said substrate surface to form said insulating layer, said irradiating light is directed against a rear side of the substrate opposite said insulating layer, and the wavelength of said light is selected to penetrate the substrate, while not penetrating said insulating layer.
Claim 4
Dependent Claim
20 words
A method according to claim 1 wherein said irradiating light is directed against a front side of the substrate surface.
Claim 5
Dependent Claim
34 words
A method according to claim 1 wherein said irradiating light is directed against a rear side and a front side of the substrate surface, with said light being of different wavelengths at each side.
Claim 6
Dependent Claim
24 words
A method according to claim 1 wherein said thin film is of a refractory metal selected from the group consisting of tungsten and molybdenum.
Claim 7
Dependent Claim
55 words
A method according to claim 1 wherein said thin film is formed on a stepped surface of said substrate, and said irradiating light is directed against a rear side of the substrate opposite said insulating layer, and said thin film is thereby formed selectively in a recessed portion of the stepped surface of the substrate.
Claim 8
Dependent Claim
20 words
A method according to claim 6 wherein said irradiating light is additionally directed against a front side of the substrate.
Claim 9
Dependent Claim
31 words
A method according to claim 2, wherein formation of said thin film is effected by depositing tungsten by using a mixed gas comprising tungsten hexafluoride and hydrogen as said reactive gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-12 | 1991-04-13 | 1991-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-12 | 1995-04-13 | 1995-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-12 | 1999-04-13 | 1999-10-13 | $7700.00 | Window Closed / Lapsed |