US4552783A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces
Assignee: Intersil Corp
•
Filing: 1984-11-05
•
Granted: 1985-11-12
•
Expires: 2004-11-05
Abstract
Abstract A method is provided for selectively depositing tungsten metal at thicknesses over 1000 angstroms or more on silicon and other conductor and semiconductor surfaces, wherein a substrate containing such surfaces is exposed to a chlorine or bromine containing solution to prevent deposition of tungsten on the insulator surfaces.
Inventors
- 👤 Robert W. Stoll
- 👤 Michael R. MacLaury
- 👤 Ronald H. Wilson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:08
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
80 words
A method for enhancing the selective vapor deposition of tungsten on conductor and semiconductor surfaces of a substrate which contains insulator surfaces, said method comprising (a) contacting the substrate with a hydrogen fluoride solution; (b) removal of substantially all of said hydrogen fluoride from said substrate; (c) contacting the substrate with a halogen containing solution, said halogen being selected from the group consisting of chlorine and bromine; and (d) removing substantially all of said halogen containing solution from said substrate.
Claim 2
Independent Claim
80 words
A method for enhancing the selective vapor deposition of tungsten on conductor and semiconductor surfaces of a substrate which contains insulator surfaces, said method comprising (a) contacting the substrate with a hydrogen fluoride solution; (b) removal of substantially all of said hydrogen fluoride from said substrate; (c) contacting the substrate with a halogen containing solution, said halogen being selected from the group consisting of chlorine and bromine; and (d) removing substantially all of said halogen containing solution from said substrate.
Claim 3
Dependent Claim
53 words
A method as in claim 1 wherein the halogen containing solution is a solution of chlorine and bromine containing species selected from the group consisting of hydrogen chloride, hydrogen bromide, chlorine gas, bromine gas, chlorinated hydrocarbons of from 1 to 6 carbon atoms and brominated hydrocarbons of from 1 to 6 carbon atoms.
Claim 4
Dependent Claim
11 words
A method as in claim 2 wherein the halogen is chlorine.
Claim 5
Dependent Claim
29 words
A method as in claim 3 where in the substrate contains insulator surfaces provided by a member of the group consisting of silicon dioxide, silicon nitride and silicon oxynitride.
Claim 6
Dependent Claim
14 words
A method as in claim 4 wherein said substrate is a patterned silicon wafer.
Claim 7
Dependent Claim
27 words
A method as in claim 5 wherein the concentration of hydrogen fluoride falls within the range of about 0.05 to 50 weight percent of the aqueous medium.
Claim 8
Dependent Claim
19 words
A method as in claim 2 wherein the hydrogen fluoride solution is removed with a rinse of deionized water.
Claim 9
Dependent Claim
29 words
A method as in claim 3 wherein the chlorine containing solution is an aqueous solution of a chlorine-containing species selected from the group consisting of chlorine gas and HCl.
Claim 10
Dependent Claim
46 words
A method as in claim 3 wherein the chlorine containing solution is an organic solution of a chlorine containing species selected from the group consisting of methylene chloride, ethylene chloride, carbon tetrachloride, propylene chloride, n-butyl chloride, chloroform, hydrogen chloride, hydrogen bromide, chlorine gas and bromine gas.
Claim 11
Dependent Claim
27 words
A method as in claim 8 wherein the concentration of chlorine-containing species within said aqueous solution falls within the range of about 0.5 to 50 weight percent.
Claim 12
Dependent Claim
23 words
A method as in claim 10 wherein the temperature of said solution is within the range of about 0° C. to 200° C.
Claim 13
Dependent Claim
19 words
A method as in claim 8 wherein the chlorine containing solution is removed with a rinse of deionized water.
Claim 14
Dependent Claim
34 words
A method as in claim 2 comprising the additional step of vapor depositing tungsten metal at a thickness of about 500 angstroms after removal of substantially all of said hydrogen fluoride from said substrate.
Claim 15
Independent Claim
113 words
A method for selectively depositing 1000 angstroms or more of tungsten metal on the conductor and semiconductor surfaces of a substrate which contains insulator surfaces, said method comprising (a) contacting the surfaces of said substrate with a hydrogen fluoride solution; (b) removal of substantially all of said hydrogen fluoride solution; (c) contacting said substrate with a halogen containing solution, said halogen being selected from the group consisting of chlorine and bromine; (d) removing substantially all of said halogen containing solution from the surface of said substrate; and (e) depositing a gas mixture of tungsten hexafluoride and hydrogen on said substrate at a temperature within the range of about 200° C. to 350° C.
Claim 16
Independent Claim
113 words
A method for selectively depositing 1000 angstroms or more of tungsten metal on the conductor and semiconductor surfaces of a substrate which contains insulator surfaces, said method comprising (a) contacting the surfaces of said substrate with a hydrogen fluoride solution; (b) removal of substantially all of said hydrogen fluoride solution; (c) contacting said substrate with a halogen containing solution, said halogen being selected from the group consisting of chlorine and bromine; (d) removing substantially all of said halogen containing solution from the surface of said substrate; and (e) depositing a gas mixture of tungsten hexafluoride and hydrogen on said substrate at a temperature within the range of about 200° C. to 350° C.
Claim 17
Dependent Claim
53 words
A method as in claim 14 wherein the halogen containing solution is a solution of chlorine and bromine containing species selected from the group consisting of hydrogen chloride, hydrogen bromide, chlorine gas, bromine gas, chlorinated hydrocarbons of from 1 to 6 carbon atoms and brominated hydrocarbons of from 1 to 6 carbon atoms.
Claim 18
Dependent Claim
42 words
A method as in claim 15 wherein the gas mixture is comprised of hydrogen and tungsten hexafluoride in a ratio of about 3:1 to 1000:1 and the flow rate of tungsten hexafluoride is within the range of about 0.1 to 50 SCCM.
Claim 19
Dependent Claim
26 words
A method as in claim 15 wherein the deposition of tungsten takes place at a temperature within the range of about 225° C. to 325° C.
Claim 20
Dependent Claim
21 words
A method as in claim 15 wherein the substrate contains insulator surfaces provided by silicon dioxide, silicon nitride and silicon oxynitride.
Claim 21
Dependent Claim
14 words
A method as in claim 18 wherein the substrate is a patterned silicon wafer.
Claim 22
Dependent Claim
36 words
A method as in claim 15 comprising the additional step of depositing tungsten on said substrate at a thickness of about 500 angstroms after removal of substantially all of said hydrogen fluoride solution from said substrate.
References Cited (Backward Citations)
US3988256A
Cited
US4075367A
Cited
US4159917A
Cited
US4264374A
Cited
US4308089A
Cited
US4426311A
Cited
US4404235A
Cited
US4349408A
Cited
US4380490A
Cited
US4517225A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-11-11 | 1989-05-13 | 1989-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-11-11 | 1993-05-13 | 1993-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-11-11 | 1997-05-13 | 1997-11-12 | $7700.00 | Window Closed / Lapsed |