US4404235A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for improving adhesion of metal film on a dielectric surface
Assignee: Intersil Corp
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Filing: 1981-02-23
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Granted: 1983-09-13
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Expires: 2001-02-23
Abstract
Abstract The surface of a dielectric is exposed to gaseous WF 6 and H 2 at a temperature between approximately 500° C. and 650° C. This initiates the formation of tungsten islands on the dielectric surface without damaging the surface. An appropriate metallization layer is then deposited from the vapor phase onto the tungsten island covered dielectric surface.
Inventors
- 👤 Ming L. Tarng
- 👤 Walter A. Hicinbothem, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:22
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/02; C23C14/024; C23C14/025; C23C16/00; C23C16/06; C23C16/08; C23C16/14; H; H10; H10P; H10P14/00; H10P14/40; H10P14/412
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
74 words
A method for depositing a metal film on a dielectric surface, comprising the steps of: exposing the dielectric surface to gaseous WF 6 and H 2 , at a temperature between approximately 500° C. and 650° C., so as to form an adherence layer without etching the dielectric surface, said adherence layer comprising a plurality of discontinuous tungsten islands on the dielectric surface; and thereafter introducing said metal, in gaseous form, to said surface.
Claim 2
Independent Claim
74 words
A method for depositing a metal film on a dielectric surface, comprising the steps of: exposing the dielectric surface to gaseous WF 6 and H 2 , at a temperature between approximately 500° C. and 650° C., so as to form an adherence layer without etching the dielectric surface, said adherence layer comprising a plurality of discontinuous tungsten islands on the dielectric surface; and thereafter introducing said metal, in gaseous form, to said surface.
Claim 3
Dependent Claim
20 words
A method in accordance with claim 1, comprising: providing the WF 6 at a pressure less than approximately 1 Torr.
Claim 4
Dependent Claim
28 words
A method in accordance with claim 1, wherein: the dielectric is selected from the group consisting of polyimide, Si 3 N 4 , SiO 2 , and PSG.
Claim 5
Dependent Claim
15 words
A method in accordance with claim 3, wherein: said metal is platinum, applied by sputtering.
Claim 6
Dependent Claim
45 words
A method in accordance with claim 1, further comprising: forming a dielectric layer on a silicon substrate, the dielectric layer having an opening which exposes a portion of the silicon substrate; and depositing tungsten onto said exposed substrate portion prior to forming said adherence layer.
Claim 7
Dependent Claim
28 words
A method in accordance with claim 1 wherein said tungsten islands are approximately 0.1-1.0 micron in size and cover approximately 10%-90% of the area of said dielectric surface.
Claim 8
Independent Claim
74 words
A method for depositing a metal film on a dielectric surface, comprising the steps of: exposing the dielectric surface to gaseous MoF 6 and H 2 , at a temperature between approximately 500° C. and 650° C., so as to form an adherence layer without etching the dielectric surface, said adherence layer comprising a plurality of discontinuous molybdenum islands on the dielectric surface; and thereafter introducing said metal, in gaseous form, to said surface.
Claim 9
Independent Claim
74 words
A method for depositing a metal film on a dielectric surface, comprising the steps of: exposing the dielectric surface to gaseous MoF 6 and H 2 , at a temperature between approximately 500° C. and 650° C., so as to form an adherence layer without etching the dielectric surface, said adherence layer comprising a plurality of discontinuous molybdenum islands on the dielectric surface; and thereafter introducing said metal, in gaseous form, to said surface.
Claim 10
Dependent Claim
28 words
A method in accordance with claim 7 wherein said molybdenum islands are approximately 0.1-1.0 micron in size and cover approximately 10%-90% of the area of said dielectric surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-12 | 1987-03-14 | 1987-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-12 | 1991-03-14 | 1991-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-12 | 1995-03-14 | 1995-09-13 | $7700.00 | Window Closed / Lapsed |