Method of selective chemical vapor deposition

Abstract

Abstract METALS ARE CAUSED TO BE DEPOSITED SELECTIVELY IN THE HYDROGEN REDUCTION OF THEIR COMPOUNDS WHICH ARE EITHER GASEOUS BEARING OR OF ADEQUATE VAPOR PRESSURE. THE PROCESS IS TERMED SELECTIVE-CHEMICAL VAPOR DEPOSITION SINCE THE METAL IS DEPOSITED ONLY ON PREPATTERNED AREAS OF A SUBSTRATE. THE SUBSTRATE IS SUITABLY A GLASS SUCH AS A BOROSILICATE, BOROALUMINO-SILICATE, PHOSPHOALUMINOSILICATE, PHOSPHOSILICATE OR SODA-LIME GLASS. THE SELECTIVECHEMICAL VAPOR DEPOSTION PROCESS OCCURS WHEN TWO SURFACES WITH DIFFERENT CHEMICAL REACTIVITIES ARE EXPOSED TO THE CHEMICAL VAPOR DEPOSITION ENVIRONMENT. THE PREPATTERNED AREAS PROVIDE ONE OF THESE SURFACES, SUCH AREAS COMPRISING A NUCLEATION LAYER OF A MATERIAL SUCH AS CHROMIUM, TUNGSTEN, MOLYBDENUM, COPPER, ALUMINUM, SILICON, SILICON DIOXIDE, ALUMINUM OXIDE, SILICON NITTRIDE AND THE LIKE, OR A COMPOSITE LAYER OF CHROMIUM-COPPER, CHROMIUM-COPPER CHROMIUM AND THE LIKE. THE OTHER SURFACE IS PROVIDED BY THE REMAINDER OF THE SURFACE OF THE EXPOSED SUBSTRATE. THE SURFACE PROVIDED BY THE PREPATTERNED AREA ACTS AS A METAL MUCLEATION SITE WHILE THE GLASS SURFACE IS CHEMICALLY ERODED (ABLATED) AND THE METAL DOES NOT NUCLEATE THEREON. AN EXAMPLE OF THE PROCESS IS THE CHEMICAL REDUCTION OF COPPER HEXAFLUOROACETYLACETONATE BY HYDROGEN IN THE PRESENCE OF HYDROGEN FLUORIDE OR SULFUR HEXAFLUORIDE IN A REACTION CHAMBER. THE CHAMBER CONTAINS A SUBSTRATE HAVING A PATTERNED NUCLEATING LAYER THEREON ON WHICH THE REDUCED COPPER DEPOSITS WHILE THE SUBSTRATE IS ABLATED BY THE FLUORIDE. THE DEPOSITION REACTIONS AND SIMULTANEOUS ABLATION REACTION, ACTING IN CLOSE PROXIMITY, ARE ESSENTIAL ELEMENTS OF THE INVENTIVES PROCESS.

Inventors

• 👤 Jerome J Cuomo

Bibliographic Details