US4495218A
Expired / Lapsed
US
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Process for forming thin film
Assignee: Hitachi Ltd
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Filing: 1983-09-22
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Granted: 1985-01-22
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Expires: 2003-09-22
Abstract
Abstract A thin film of a-Si, SiO2 or Si3N4 can be formed on a substrate using a starting material gas containing at least a polysilane of the formula SinH2n+2 (n=2, 3 or 4) by a chemical vapor deposition method with irradiation with light with high film forming rate at lower temperatures.
Inventors
- 👤 Kazufumi Azuma
- 👤 Mitsuo Nakatani
- 👤 Kazuo Nate
- 👤 Masaaki Okunaka
- 👤 Hitoshi Yokono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/30; C23C16/34; C23C16/345; C23C16/40; C23C16/401; C23C16/402; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/694; H10P14/6943; H10P14/69433; H10P34/00; H10P34/40; H10P34/42; H10P34/422; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6338; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
94 words
A process for forming a thin film by a chemical vapor deposition method, which comprises: supplying a starting material gas containing at least one polysilane of the formula: Si.sub.n H.sub.2n+2 wherein n is an integer of 2, 3 or 4, into a reaction vessel of a chemical vapor deposition apparatus containing a substrate heated to a temperature of from 20° C. to 300° C.; the pressure in said reaction vessel being from 0.1 to 100 torr, irradiating the starting material gas with ultraviolet light, and forming a thin film of silicon on the substrate.
Claim 2
Dependent Claim
94 words
A process for forming a thin film by a chemical vapor deposition method, which comprises: supplying a starting material gas containing at least one polysilane of the formula: Si.sub.n H.sub.2n+2 wherein n is an integer of 2, 3 or 4, into a reaction vessel of a chemical vapor deposition apparatus containing a substrate heated to a temperature of from 20° C. to 300° C.; the pressure in said reaction vessel being from 0.1 to 100 torr, irradiating the starting material gas with ultraviolet light, and forming a thin film of silicon on the substrate.
Claim 3
Dependent Claim
27 words
A process according to claim 1, wherein the starting material gas is Si 2 H 6 , Si 3 H 8 or Si 4 H 10 .
Claim 4
Dependent Claim
23 words
A process according to claim 1, wherein the substrate is silicon wafer, a glass or metal plate, or a metal or resin film.
Claim 5
Dependent Claim
19 words
A process according to claim 1, wherein the ultraviolet light is obtained from an ultraviolet lamp or ultraviolet laser.
Claim 6
Dependent Claim
112 words
A process for forming a thin film by a chemical vapor deposition method, which comprises: supplying starting material gas comprising a mixture of at least one polysilane of the formula: Si.sub.n H.sub.2n+2 wherein n is 2, 3 or 4 and a reactive gas selected from the group consisting of O 2 , air and N 2 O into a reactive vessel of a chemical vapor deposition apparatus containing a substrate heated to a temperature of from 20° C. to 300° C., the pressure in said reaction vessel being from 0.1 to 100 torr, irradiating the starting material gas with ultraviolet light and forming a thin film of SiO 2 on the substrate.
Claim 7
Dependent Claim
112 words
A process for forming a thin film by a chemical vapor deposition method, which comprises: supplying starting material gas comprising a mixture of at least one polysilane of the formula: Si.sub.n H.sub.2n+2 wherein n is 2, 3 or 4 and a reactive gas selected from the group consisting of O 2 , air and N 2 O into a reactive vessel of a chemical vapor deposition apparatus containing a substrate heated to a temperature of from 20° C. to 300° C., the pressure in said reaction vessel being from 0.1 to 100 torr, irradiating the starting material gas with ultraviolet light and forming a thin film of SiO 2 on the substrate.
Claim 8
Dependent Claim
23 words
A process according to claim 5, wherein the substrate is silicon wafer, a glass or metal plate, or a metal or resin film.
Claim 9
Dependent Claim
103 words
A process for forming a thin film by a chemical vapor deposition method, which comprises: supplying a starting material gas containing a mixture of at least one polysilane of the formula: Si.sub.n H.sub.2n+2 wherein n is an integer of 2, 3 or 4, and NH 3 into a reaction vessel of a chemical vapor deposition apparatus containing a substrate heated to a temperature of from 20° C. to 300° C., the pressure in said reaction vessel being from 0.1 to 100 torr, irradiating the starting material gas with ultraviolet light, and forming a thin film of Si 3 N 4 on the substrate.
Claim 10
Dependent Claim
103 words
A process for forming a thin film by a chemical vapor deposition method, which comprises: supplying a starting material gas containing a mixture of at least one polysilane of the formula: Si.sub.n H.sub.2n+2 wherein n is an integer of 2, 3 or 4, and NH 3 into a reaction vessel of a chemical vapor deposition apparatus containing a substrate heated to a temperature of from 20° C. to 300° C., the pressure in said reaction vessel being from 0.1 to 100 torr, irradiating the starting material gas with ultraviolet light, and forming a thin film of Si 3 N 4 on the substrate.
Claim 11
Dependent Claim
23 words
A process according to claim 7, wherein the substrate is silicon wafer, a glass or metal place, or a metal or resin film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-22 | 1988-07-23 | 1989-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-22 | 1992-07-23 | 1993-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-22 | 1996-07-23 | 1997-01-22 | $7700.00 | Window Closed / Lapsed |