US4363828A
Expired / Lapsed
US
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Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
Assignee: International Business Machines Corp
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Filing: 1979-12-12
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Granted: 1982-12-14
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Expires: 1999-12-12
Abstract
Abstract Disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ) or a higher order silane is applied in a glow discharge process to rapidly and efficiently form a film of hydrogenated amorphous silicon on a substrate. An inductively coupled RF glow discharge apparatus, a capacitively coupled glow discharge apparatus or a DC glow discharge apparatus may be employed to deposit the amorphous silicon on a conducting or non-conducting substrate. The disilane or higher order silanes may also be combined in a glow discharge process with gases which contain elements such as nitrogen or oxygen to rapidly deposit corresponding compound films.
Inventors
- 👤 Marc H. Brodsky
- 👤 Bruce A. Scott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/06; C23C16/22; C23C16/24; C23C16/30; C23C16/32; C23C16/34; C23C16/40; C23C16/401; C23C16/402; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/68; H10P14/6903; H10P14/6905
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
103 words
A method of chemical vapor deposition wherein a silicon semiconducting film is uniformly deposited on a substrate at a high speed, resulting in a deposited film having a smooth surface and having a minimal strain at the film-substrate interface, comprising the steps of: supplying a silane deposition gas including a silane gas of a higher order than monosilane to a region adjacent a deposition surface of said substrate; applying an excitation energy to said deposition gas for depositing a layer containing silicon on said deposition surface; and maintaining said deposition gas at a pressure of less than 0.1 torr during the deposition process.
Claim 2
Independent Claim
103 words
A method of chemical vapor deposition wherein a silicon semiconducting film is uniformly deposited on a substrate at a high speed, resulting in a deposited film having a smooth surface and having a minimal strain at the film-substrate interface, comprising the steps of: supplying a silane deposition gas including a silane gas of a higher order than monosilane to a region adjacent a deposition surface of said substrate; applying an excitation energy to said deposition gas for depositing a layer containing silicon on said deposition surface; and maintaining said deposition gas at a pressure of less than 0.1 torr during the deposition process.
Claim 3
Dependent Claim
24 words
The method of claim 1 including the step of controlling the temperature of said deposition gas to form a layer of hydrogenated amorphous silicon.
Claim 4
Dependent Claim
28 words
The method of claim 2 wherein said step of applying an excitation energy includes activating an RF coil to inductively couple RF energy to excite said deposition gas.
Claim 5
Independent Claim
125 words
A method of chemical vapor deposition wherein a silicon containing semiconducting film is uniformly deposited on a substrate at a high speed, resulting in a deposited film having a smooth surface and having a minimal strain at the film-substrate interface, comprising the steps of: supplying a silane deposition gas including a silane gas of a higher order than monosilane and at least one other reacting gas to a volume adjacent a deposition surface of said substrate; applying an excitation energy for reacting the silane deposition gas and said at least one other reacting gas and for depositing a layer of a silicon containing substance on said deposition surface; and maintaining said deposition gas at a pressure of less than 0.1 torr during the deposition process.
Claim 6
Independent Claim
125 words
A method of chemical vapor deposition wherein a silicon containing semiconducting film is uniformly deposited on a substrate at a high speed, resulting in a deposited film having a smooth surface and having a minimal strain at the film-substrate interface, comprising the steps of: supplying a silane deposition gas including a silane gas of a higher order than monosilane and at least one other reacting gas to a volume adjacent a deposition surface of said substrate; applying an excitation energy for reacting the silane deposition gas and said at least one other reacting gas and for depositing a layer of a silicon containing substance on said deposition surface; and maintaining said deposition gas at a pressure of less than 0.1 torr during the deposition process.
Claim 7
Dependent Claim
27 words
The method of claim 4 wherein said at least one other reacting gas includes an element selected from the group consisting of oxygen, nitrogen, carbon and boron.
Claim 8
Dependent Claim
17 words
The method of claim 4 wherein said silane deposition gas includes disilane (Si 2 H 6 ).
Claim 9
Dependent Claim
17 words
The method of claim 4 wherein said silane deposition gas includes trisilane (Si 3 H 8 ).
Claim 10
Independent Claim
124 words
A method of chemical vapor deposition wherein a germanium containing semiconducting film is uniformly deposited on a substrate at a high speed, resulting in a deposited film having a smooth surface and having a minimal strain at the film-substrate interface, comprising the steps of: supplying a germane deposition gas including a germane gas of higher order than monogermane and at least one other reacting gas to a region adjacent a deposition surface of said substrate; applying an excitation energy for reacting the germane deposition gas and said at least one other reacting gas and for depositing a layer of a germanium containing substance on said deposition surface; and maintaining said deposition gas at a pressure of less than 0.1 torr during the deposition process.
Claim 11
Independent Claim
124 words
A method of chemical vapor deposition wherein a germanium containing semiconducting film is uniformly deposited on a substrate at a high speed, resulting in a deposited film having a smooth surface and having a minimal strain at the film-substrate interface, comprising the steps of: supplying a germane deposition gas including a germane gas of higher order than monogermane and at least one other reacting gas to a region adjacent a deposition surface of said substrate; applying an excitation energy for reacting the germane deposition gas and said at least one other reacting gas and for depositing a layer of a germanium containing substance on said deposition surface; and maintaining said deposition gas at a pressure of less than 0.1 torr during the deposition process.
Claim 12
Independent Claim
110 words
A method of chemical vapor deposition wherein a silicon containing film is uniformly deposited on a substrate at a high speed, resulting in a deposited film having a smooth surface and having a minimal strain at the film-substrate interface comprising the steps of; supplying a carrier gas and a silane deposition gas including a silane gas of a higher order than monosilane to a region adjacent a deposition surface of said substrate; applying an excitation energy to said deposition gas and carrier gas for depositing a layer containing silicon on said deposition surface; and maintaining said deposition gas at a pressure of less than 0.1 torr during the deposition process.
Claim 13
Independent Claim
110 words
A method of chemical vapor deposition wherein a silicon containing film is uniformly deposited on a substrate at a high speed, resulting in a deposited film having a smooth surface and having a minimal strain at the film-substrate interface comprising the steps of; supplying a carrier gas and a silane deposition gas including a silane gas of a higher order than monosilane to a region adjacent a deposition surface of said substrate; applying an excitation energy to said deposition gas and carrier gas for depositing a layer containing silicon on said deposition surface; and maintaining said deposition gas at a pressure of less than 0.1 torr during the deposition process.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-13 | 1986-06-14 | 1986-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-13 | 1990-06-14 | 1990-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-13 | 1994-06-14 | 1994-12-14 | $7700.00 | Window Closed / Lapsed |