US4142195A
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US
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Schottky barrier semiconductor device and method of making same
Assignee: RCA Corp
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Filing: 1976-07-30
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Granted: 1979-02-27
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Expires: 1996-07-30
Abstract
Abstract A first layer of semiconductor device is of doped amorphous silicon prepared by a glow discharge in a mixture of silane and a doping gas. The first layer is on a substrate having good electrical properties. On the first layer and spaced from the substrate is a second layer of amorphous silicon prepared by a glow discharge in silane. On the second layer opposite the first layer is a metallic film forming a surface barrier junction therebetween, i.e. a Schottky barrier. The first layer is doped so as to make an ohmic contact with the substrate. Preferably the doping concentration of the first layer is graded so the dopant concentration is maximum at the interface of the first layer and the substrate. In a second embodiment of the Schottky barrier semiconductor device an intermediate layer is between and contiguous to both the first layer and the substrate. The intermediate layer facilitates in making ohmic contact between the amorphous silicon and the substrate. Annealing and heat treating steps are performed in the fabrication of the Schottky barrier device to increase device efficiency.
Inventors
- 👤 David E. Carlson
- 👤 Christopher R. Wronski
- 👤 Alfred R. Triano, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10D; H10D62/00; H10D62/40; H10F; H10F10/00; H10F10/10; H10F10/18; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
56 words
A Schottky barrier semiconductor device comprising: an annealed body of amorphous silicon fabricated by a glow discharge in silane, SiH 4 ; a metallic film on a surface of said body providing a surface barrier junction at the interface of said metallic film and said body; and means for making an ohmic contact to said body.
Claim 2
Dependent Claim
56 words
A Schottky barrier semiconductor device comprising: an annealed body of amorphous silicon fabricated by a glow discharge in silane, SiH 4 ; a metallic film on a surface of said body providing a surface barrier junction at the interface of said metallic film and said body; and means for making an ohmic contact to said body.
Claim 3
Dependent Claim
118 words
A Schottky barrier semiconductor device comprising: a body of amorphous silicon fabricated by a glow discharge in silane, SiH 4 ; said body having a first layer of doped amorphous silicon fabricated by a glow discharge in a mixture of silane and a doping gas, and a second layer of amorphous silicon fabricated by a glow discharge in silane on a surface of said first layer; a metallic layer on a surface of said second layer opposite said first layer providing a surface barrier junction at the interface of said metallic film and second layer, said surface barrier junction being capable of generating an electric field in said second layer; and means for electrically contacting said first layer.
Claim 4
Dependent Claim
118 words
A Schottky barrier semiconductor device comprising: a body of amorphous silicon fabricated by a glow discharge in silane, SiH 4 ; said body having a first layer of doped amorphous silicon fabricated by a glow discharge in a mixture of silane and a doping gas, and a second layer of amorphous silicon fabricated by a glow discharge in silane on a surface of said first layer; a metallic layer on a surface of said second layer opposite said first layer providing a surface barrier junction at the interface of said metallic film and second layer, said surface barrier junction being capable of generating an electric field in said second layer; and means for electrically contacting said first layer.
Claim 5
Dependent Claim
26 words
The Schottky barrier semiconductor device in accordance with claim 2 wherein second layer is of amorphous silicon fabricated by a glow discharge in substantially pure silane.
Claim 6
Dependent Claim
19 words
The Schottky barrier semiconductor device in accordance with claim 3 wherein said first layer is of N type conductivity.
Claim 7
Dependent Claim
42 words
The Schottky barrier semiconductor device in accordance with claim 2 wherein said means for electrically contacting said first layer is a substrate on said first layer, said substrate is electrically conductive and capable of having an ohmic contact with said first layer.
Claim 8
Dependent Claim
50 words
The Schottky barrier semiconductor device in accordance with claim 5 wherein the dopant concentration of said first layer is graded such that it is a maximum at the interface of said first layer and said substrate and decreases in the direction of the interface of said first and second layers.
Claim 9
Dependent Claim
25 words
The Schottky barrier semiconductor device in accordance with claim 6 wherein the dopant concentration at the interface of said first and second layers is insignificant.
Claim 10
Dependent Claim
23 words
The Schottky barrier semiconductor device in accordance with claim 7 wherein the maximum dopant concentration is on the order of 5 atomic percent.
Claim 11
Dependent Claim
30 words
The Schottky barrier semiconductor device in accordance with claim 8 wherein said doping gas is selected from the group consisting of phosphine, arsine, antimony, bismuth, sodium hydride and cesium nitride.
Claim 12
Dependent Claim
25 words
The Schottky barrier semiconductor device in accordance with claim 5 wherein the dopant concentration of said first layer is substantially uniform through said first layer.
Claim 13
Dependent Claim
18 words
The Schottky barrier semiconductor device in accordance with claim 2 wherein said body of amorphous silicon is annealed.
Claim 14
Dependent Claim
30 words
The Schottky barrier semiconductor device in accordance with claim 2 wherein said doping gas is selected from the group consisting of phosphine, arsine, antimony, bismuth, sodium hydride and cesium nitride.
Claim 15
Dependent Claim
41 words
The Schottky barrier semiconductor device in accordance with claim 2 wherein said means for electrically contacting said first layer is an intermediate layer on said first layer, said intermediate layer being capable of having an ohmic contact with said first layer.
Claim 16
Dependent Claim
30 words
The Schottky barrier semiconductor device in accordance with claim 13 wherein said intermediate layer is on an electrically conductive substrate capable of having an ohmic contact with said intermediate layer.
Claim 17
Dependent Claim
33 words
The Schottky barrier semiconductor device in accordance with claim 14 wherein said intermediate layer is of doped amorphous germanium fabricated by a glow discharge in germane, GeH 4 , and a doping gas.
Claim 18
Dependent Claim
19 words
The Schottky barrier semiconductor device in accordance with claim 15 wherein said intermediate layer is of N type conductivity.
Claim 19
Dependent Claim
30 words
The Schottky barrier semiconductor device in accordance with claim 15 wherein said doping gas is selected from the group consisting of phosphine, arsine, antimony, bismuth, sodium hydride and cesium nitride.
Claim 20
Dependent Claim
41 words
The Schottky barrier semiconductor device in accordance with claim 14 wherein said intermediate layer is of a doped germanium-silicon alloy fabricated by a glow discharge in a mixture of germane, GeH 4 , silane, SiH 4 , and a doping gas.
Claim 21
Dependent Claim
19 words
The Schottky barrier semiconductor device in accordance with claim 18 wherein said intermediate layer is of N type conductivity.
Claim 22
Dependent Claim
30 words
The Schottky barrier semiconductor device in accordance with claim 18 wherein said doping gas is selected from the group consisting of phosphine, arsine, antimony, bismuth, sodium hydride and cesium nitride.
Claim 23
Dependent Claim
16 words
The Schottky barrier semiconductor device in accordance with claim 14 wherein said substrate is of aluminum.
Claim 24
Dependent Claim
82 words
In a method of fabricating a Schottky barrier semiconductor device wherein a metallic film, which forms a Schottky barrier on a semiconductor body, is deposited onto said semiconductor body and an ohmic contact is formed on said body opposite to said Schottky barrier, the improvement which comprises the steps of: forming a body of amorphous silicon by glow discharge in silane; and annealing said body prior to the deposition of said metallic film which forms a Schottky barrier to said semiconductor body.
Claim 25
Dependent Claim
82 words
In a method of fabricating a Schottky barrier semiconductor device wherein a metallic film, which forms a Schottky barrier on a semiconductor body, is deposited onto said semiconductor body and an ohmic contact is formed on said body opposite to said Schottky barrier, the improvement which comprises the steps of: forming a body of amorphous silicon by glow discharge in silane; and annealing said body prior to the deposition of said metallic film which forms a Schottky barrier to said semiconductor body.
Claim 26
Dependent Claim
22 words
In the method of fabricating a Schottky barrier device in accordance with claim 22 wherein said annealing is performed in a vacuum.
Claim 27
Dependent Claim
24 words
In the method of fabricating a Schottky barrier device in accordance with claim 22 wherein said annealing is performed in a forming gas atmosphere.
Claim 28
Dependent Claim
38 words
The method of fabricating a Schottky barrier semiconductor device in accordance with claim 22 wherein said body is annealed at a temperature in the range of 200° C. to 450° C. for a few minutes to several hours.
Claim 29
Dependent Claim
77 words
In a method of fabricating a Schottky barrier semiconductor device, the steps of: forming a first layer of doped amorphous silicon by a glow discharge in a mixture of silane and a doping gas; forming a second layer of amorphous silicon by a glow discharge in silane on said first layer; and annealing said first and second layers at a temperature in the range of 200° C. to 450° C. for a few minutes to several hours.
Claim 30
Dependent Claim
77 words
In a method of fabricating a Schottky barrier semiconductor device, the steps of: forming a first layer of doped amorphous silicon by a glow discharge in a mixture of silane and a doping gas; forming a second layer of amorphous silicon by a glow discharge in silane on said first layer; and annealing said first and second layers at a temperature in the range of 200° C. to 450° C. for a few minutes to several hours.
Claim 31
Dependent Claim
22 words
In the method of fabricating a Schottky barrier device in accordance with claim 26 wherein said annealing is performed in a vacuum.
Claim 32
Dependent Claim
24 words
In the method of fabricating a Schottky barrier device in accordance with claim 26 wherein said annealing is performed in a forming gas atmosphere.
Claim 33
Dependent Claim
54 words
In a method of fabricating a Schottky barrier semiconductor device having a body of amorphous silicon prepared by a glow discharge in silane and a metallic film on said body, the step of: heating said device to a temperature in the range of 150° C. to 250° C. for about 5 to 30 minutes.
Claim 34
Dependent Claim
54 words
In a method of fabricating a Schottky barrier semiconductor device having a body of amorphous silicon prepared by a glow discharge in silane and a metallic film on said body, the step of: heating said device to a temperature in the range of 150° C. to 250° C. for about 5 to 30 minutes.
Claim 35
Dependent Claim
21 words
In the method of fabricating a Schottky barrier device in accordance with claim 29 wherein said heating is in a vacuum.
Claim 36
Dependent Claim
23 words
In the method of fabricating a Schottky barrier device in accordance with claim 29 wherein said heating is in a forming gas atmosphere.
Claim 37
Dependent Claim
26 words
In the method of fabricating a Schottky barrier device in accordance with claim 31 wherein said forming gas is 90% nitrogen and 10% hydrogen by volume.
Claim 38
Dependent Claim
80 words
In a method of fabricating a Schottky barrier semiconductor device having a first layer of doped amorphous silicon prepared by a glow discharge in a mixture of silane and doping gas, a second layer of amorphous silicon prepared by a glow discharge in silane on said first layer and a metallic film on said second layer, the step of: heating said device to a temperature in the range of 150° C. to 250° C. for bout 5 to 30 minutes.
Claim 39
Dependent Claim
80 words
In a method of fabricating a Schottky barrier semiconductor device having a first layer of doped amorphous silicon prepared by a glow discharge in a mixture of silane and doping gas, a second layer of amorphous silicon prepared by a glow discharge in silane on said first layer and a metallic film on said second layer, the step of: heating said device to a temperature in the range of 150° C. to 250° C. for bout 5 to 30 minutes.
Claim 40
Dependent Claim
22 words
In the method of fabricating a Schottky barrier device in accordance with claim 33 wherein said heating is performed in a vacuum.
Claim 41
Dependent Claim
24 words
In the method of fabricating a Schottky barrier device in accordance with claim 33 wherein said heating is performed in a forming gas atmosphere.
Claim 42
Independent Claim
114 words
A method of fabricating a Schottky barrier semiconductor device, the steps of: forming a body of amorphous silicon by a glow discharge in silane; depositing a metallic layer on a surface of said body; heating said body and metallic film to a temperature in the range of 150° C. to 250° C. for about 5 to 30 minutes; depositing an electrode on a portion of a surface of said metallic film opposite said body; depositing an antireflection layer on the portion of the surface of said metallic film and on said electrode; and heating said device to a temperature in the range of 150° C. to 250° C. for about 5 to 30 minutes.
Claim 43
Independent Claim
114 words
A method of fabricating a Schottky barrier semiconductor device, the steps of: forming a body of amorphous silicon by a glow discharge in silane; depositing a metallic layer on a surface of said body; heating said body and metallic film to a temperature in the range of 150° C. to 250° C. for about 5 to 30 minutes; depositing an electrode on a portion of a surface of said metallic film opposite said body; depositing an antireflection layer on the portion of the surface of said metallic film and on said electrode; and heating said device to a temperature in the range of 150° C. to 250° C. for about 5 to 30 minutes.
Claim 44
Dependent Claim
85 words
In a method of fabricating a Schottky barrier semiconductor device, the steps of; forming an intermediate layer; forming a first layer of doped amorphous silicon by a glow discharge in a mixture of silane and a doping gas on said intermediate layer; forming a second layer of amorphous silicon by a glow discharge in silane on said first layer; and annealing said first and second layers at a temperature in the range of 200° C. to 450° C. for a few minutes to several hours.
Claim 45
Dependent Claim
85 words
In a method of fabricating a Schottky barrier semiconductor device, the steps of; forming an intermediate layer; forming a first layer of doped amorphous silicon by a glow discharge in a mixture of silane and a doping gas on said intermediate layer; forming a second layer of amorphous silicon by a glow discharge in silane on said first layer; and annealing said first and second layers at a temperature in the range of 200° C. to 450° C. for a few minutes to several hours.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-26 | 1982-08-28 | 1983-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-26 | 1986-08-28 | 1987-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-26 | 1990-08-28 | 1991-02-27 | $7700.00 | Window Closed / Lapsed |