US5067809A
Expired / Lapsed
US
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Opto-semiconductor device and method of fabrication of the same
Assignee: Oki Electric Industry Co Ltd
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Filing: 1990-06-04
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Granted: 1991-11-26
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Expires: 2010-06-04
Abstract
Abstract In an opto-semiconductor device, a light-emitting part formed on a substrate, a transparent insulating monocrystalline layer is formed over the entire surface of the substrate covering the light-emitting part, a contact window is opened through the transparent insulating monocrystalline layer in the center of the light-emitting part, and an electrode is formed of a transparent conductive monocrystalline layer passing through the contact window and connected to the central part of the light-emitting part, the electrode being formed on the transparent insulating monocrystalline layer. A transparent insulating monocrystalline layer may additionally be formed on the device including the electrode formed of the transparent conductive monocrystalline layer, and a photo-sensitive device formed of a monocrystalline layer may be provided on the transparent insulating monocrystalline layer.
Inventors
- 👤 Takashi Tsubota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 07:12
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/833; H10F; H10F55/00; H10F55/20; H10F55/25; H10F55/255
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
88 words
An opto-semiconductor device comprising: (a) a substrate and a light-emitting part located thereon; (b) a transparent insulating monocrystalline layer located over said substrate and said light-emitting part; (c) a contact window opened through said transparent insulating monocrystalline layer, said window being located over a portion of said light-emitting part; and (d) an electrode comprising a transparent conductive monocrystalline layer passing through said contact window and coupled to the portion of said light-emitting part, at least a section of said electrode being located on said transparent insulating monocrystalline layer.
Claim 2
Dependent Claim
88 words
An opto-semiconductor device comprising: (a) a substrate and a light-emitting part located thereon; (b) a transparent insulating monocrystalline layer located over said substrate and said light-emitting part; (c) a contact window opened through said transparent insulating monocrystalline layer, said window being located over a portion of said light-emitting part; and (d) an electrode comprising a transparent conductive monocrystalline layer passing through said contact window and coupled to the portion of said light-emitting part, at least a section of said electrode being located on said transparent insulating monocrystalline layer.
Claim 3
Dependent Claim
118 words
An opto-semiconductor device comprising: (a) a light-emitting part formed on a substrate; (b) a transparent insulating monocrystalline layer formed over a portion of said substrate covering said light-emitting part; (c) a contact window opened through said transparent insulating monocrystalline layer in a portion of said light-emitting part; (d) an electrode formed of a transparent conductive monocrystalline layer passing through said contact window and connected to the portion of said light-emitting part, said electrode being formed on said transparent insulating monocrystalline layer; (e) a transparent insulating monocrystalline layer formed on the device including the electrode formed of said transparent conductive monocrystalline layer; and (f) a photo-sensitive device formed of a monocrystalline layer provided on said transparent insulating monocrystalline layer.
Claim 4
Dependent Claim
118 words
An opto-semiconductor device comprising: (a) a light-emitting part formed on a substrate; (b) a transparent insulating monocrystalline layer formed over a portion of said substrate covering said light-emitting part; (c) a contact window opened through said transparent insulating monocrystalline layer in a portion of said light-emitting part; (d) an electrode formed of a transparent conductive monocrystalline layer passing through said contact window and connected to the portion of said light-emitting part, said electrode being formed on said transparent insulating monocrystalline layer; (e) a transparent insulating monocrystalline layer formed on the device including the electrode formed of said transparent conductive monocrystalline layer; and (f) a photo-sensitive device formed of a monocrystalline layer provided on said transparent insulating monocrystalline layer.
Claim 5
Independent Claim
89 words
A method of fabricating an opto-semiconductor device comprising the steps of: (a) forming a light-emitting part on a substrate; (b) forming a transparent insulating monocrystalline layer over a portion of the surface of said substrate to cover said light-emitting part; (c) forming a contact window through said transparent insulating monocrystalline layer in a portion of said light-emitting part; and (d) forming an electrode of a transparent conductive monocrystalline layer passing through said contact window and connected to the portion of said light-emitting part, on said transparent insulating monocrystalline layer.
Claim 6
Independent Claim
89 words
A method of fabricating an opto-semiconductor device comprising the steps of: (a) forming a light-emitting part on a substrate; (b) forming a transparent insulating monocrystalline layer over a portion of the surface of said substrate to cover said light-emitting part; (c) forming a contact window through said transparent insulating monocrystalline layer in a portion of said light-emitting part; and (d) forming an electrode of a transparent conductive monocrystalline layer passing through said contact window and connected to the portion of said light-emitting part, on said transparent insulating monocrystalline layer.
Claim 7
Independent Claim
116 words
A method comprising the steps of: (a) forming a light-emitting part on a substrate; (b) forming a transparent insulating monocrystalline layer over a portion of said substrate to cover said light-emitting part; (c) forming a contact window through said transparent insulating monocrystalline layer in a portion of said light-emitting part; (d) forming an electrode of a transparent conductive monocrystalline layer passing through said contact window and connected to the portion of said light-emitting part, on said transparent insulating monocrystalline layer; (e) forming an insulating monocrystalline layer on the device including the electrode formed of said transparent conductive monocrystalline layer; and (f) providing a photo-sensitive device formed of a monocrystalline layer on said transparent insulating monocrystalline layer.
Claim 8
Independent Claim
116 words
A method comprising the steps of: (a) forming a light-emitting part on a substrate; (b) forming a transparent insulating monocrystalline layer over a portion of said substrate to cover said light-emitting part; (c) forming a contact window through said transparent insulating monocrystalline layer in a portion of said light-emitting part; (d) forming an electrode of a transparent conductive monocrystalline layer passing through said contact window and connected to the portion of said light-emitting part, on said transparent insulating monocrystalline layer; (e) forming an insulating monocrystalline layer on the device including the electrode formed of said transparent conductive monocrystalline layer; and (f) providing a photo-sensitive device formed of a monocrystalline layer on said transparent insulating monocrystalline layer.
Claim 9
Dependent Claim
18 words
An opto-semiconductor device according to claim 1 wherein said transparent conductive monocrystalline layer is formed of a semiconductor.
Claim 10
Dependent Claim
18 words
An opto-semiconductor device according to claim 5 wherein said transparent insulating monocrystalline layer is formed of a semiconductor.
Claim 11
Dependent Claim
17 words
A method according to claim 3 wherein said transparent conductive monocrystalline layer is formed of a semiconductor.
Claim 12
Dependent Claim
17 words
A method according to claim 3 wherein said transparent insulating monocrystalline layer is formed of a semiconductor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-25 | 1995-05-27 | 1995-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-25 | 1999-05-27 | 1999-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-25 | 2003-05-27 | 2003-11-26 | $7700.00 | Window Closed / Lapsed |