Laser for integrated optical circuits

Claim 1

A monolithic semiconductor laser comprising: a substrate of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions, an epitaxial waveguide of semiconductor material disposed on said substrate and being of one type conductivity material, a mesa of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions mounted on said epitaxial waveguide of said substrate, said mesa including a first lower region of semiconductor material of said one type conductivity contacting said epitaxial waveguide and a second upper region of semiconductor material of the other type conductivity disposed atop said first region of semiconductor material, thereby defining a p-n junction between said first and second regions of said mesa, said first and second regions having opposite parallel faceted faces, thereby providing for optical feedback electrical contacts respectively mounted atop said mesa in engagement with said second region of the other conductivity type semiconductor material and the surface of said substrate remote from said epitaxial layer, and means attached to said contact atop said mesa for connecting said contact to an electrical power source, whereby said p-n junction formed in said mesa being responsive to said electrical power source is made to lase by the injection of minority carriers across said junction thereby producing laser radiation that is coupled into said epitaxial waveguide.