Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
204 words
A monolithic semiconductor structure comprising: a semiconductor substrate, first and second layers of semiconductor material, said first layer of semiconductor material being disposed in intimate contact with the surface of said semiconductor substrate and said second layer of semiconductor material being disposed atop said first layer of semiconductor material in intimate contact therewith, a semiconductor laser mounted on said second layer of semiconductor material and including a base layer of semiconductor material disposed in intimate contact with said second layer of semiconductor material and third and fourth layers of semiconductor material of opposite conductivity types disposed on said base layer of semiconductor material, said third and fourth layers of semiconductor material defining a pn junction therebetween and comprising the laser cavity of said semiconductor laser, said first and base layers of semiconductor material having substantially the same index of refraction and said second layer of semiconductor material sandwiched therebetween having a higher index of refraction relative to the index of refraction of said first and base layers of semiconductor material and comprising a semiconductor waveguide, and said semiconductor laser being optically coupled to said semiconductor waveguide by evanescent fields through said base layer for transferring radiation from said semiconductor laser into said semiconductor waveguide.
Claim 2
Dependent Claim
204 words
A monolithic semiconductor structure comprising: a semiconductor substrate, first and second layers of semiconductor material, said first layer of semiconductor material being disposed in intimate contact with the surface of said semiconductor substrate and said second layer of semiconductor material being disposed atop said first layer of semiconductor material in intimate contact therewith, a semiconductor laser mounted on said second layer of semiconductor material and including a base layer of semiconductor material disposed in intimate contact with said second layer of semiconductor material and third and fourth layers of semiconductor material of opposite conductivity types disposed on said base layer of semiconductor material, said third and fourth layers of semiconductor material defining a pn junction therebetween and comprising the laser cavity of said semiconductor laser, said first and base layers of semiconductor material having substantially the same index of refraction and said second layer of semiconductor material sandwiched therebetween having a higher index of refraction relative to the index of refraction of said first and base layers of semiconductor material and comprising a semiconductor waveguide, and said semiconductor laser being optically coupled to said semiconductor waveguide by evanescent fields through said base layer for transferring radiation from said semiconductor laser into said semiconductor waveguide.
Claim 3
Dependent Claim
23 words
A monolithic semiconductor structure as set forth in claim 1, wherein said semiconductor laser is formed as a mesa on said semiconductor waveguide.
Claim 4
Dependent Claim
57 words
A monolithic semiconductor structure as set forth in claim 1, wherein said semiconductor substrate is formed of gallium arsenide, said first, second, and base layers of semiconductor material being formed of gallium aluminum arsenide, and said third and fourth layers of semiconductor material included in said semiconductor laser being formed of gallium arsenide of opposite conductivity types.
Claim 5
Dependent Claim
27 words
A monolithic semiconductor structure as set forth in claim 1, wherein said first, second, and base layers of semiconductor material are all of the same conductivity type.
Claim 6
Dependent Claim
294 words
A monolithic semiconductor structure comprising: a semiconductor substrate of n-type gallium arsenide, a first layer of n-type gallium aluminum arsenide disposed in intimate contact with said substrate, a second layer of n-type gallium aluminum arsenide disposed atop said first layer of n-type gallium aluminum arsenide in intimate contact therewith, a semiconductor laser mounted on said second layer of n-type gallium aluminum arsenide and including a base layer of n-type gallium aluminum arsenide in intimate contact with said second layer of n-type gallium aluminum arsenide, and a pair of laser cavity-defining layers of gallium arsenide of opposiTe conductivity types disposed on said base layer of n-type gallium aluminum arsenide with the n-type gallium arsenide laser cavity-defining layer in intimate contact with said base layer of n-type gallium aluminum arsenide and the p-type gallium arsenide laser cavity-defining layer being disposed in intimate contact with the opposite surface of said n-type gallium arsenide laser cavity-defining layer to define a p-n junction therewith, and a layer of p-type gallium aluminum arsenide disposed atop said p-type gallium arsenide laser cavity-defining layer, said second n-type gallium aluminum arsenide layer having a lower aluminum to gallium ratio than said first layer and said base layer of n-type gallium aluminum arsenide between which it is disposed, the index of refraction of said second layer of n-type gallium aluminum arsenide being higher than the indices of refraction of said first layer and said base layer of n-type gallium aluminum arsenide, said second n-type gallium aluminum arsenide layer serving as a semiconductor waveguide, and said semiconductor laser being optically coupled to said semiconductor waveguide by evanescent fields through said base layer of n-type gallium aluminum arsenide in intimate contact with said semiconductor waveguide for transferring radiation from said semiconductor laser into said semiconductor waveguide.
Claim 7
Dependent Claim
294 words
A monolithic semiconductor structure comprising: a semiconductor substrate of n-type gallium arsenide, a first layer of n-type gallium aluminum arsenide disposed in intimate contact with said substrate, a second layer of n-type gallium aluminum arsenide disposed atop said first layer of n-type gallium aluminum arsenide in intimate contact therewith, a semiconductor laser mounted on said second layer of n-type gallium aluminum arsenide and including a base layer of n-type gallium aluminum arsenide in intimate contact with said second layer of n-type gallium aluminum arsenide, and a pair of laser cavity-defining layers of gallium arsenide of opposiTe conductivity types disposed on said base layer of n-type gallium aluminum arsenide with the n-type gallium arsenide laser cavity-defining layer in intimate contact with said base layer of n-type gallium aluminum arsenide and the p-type gallium arsenide laser cavity-defining layer being disposed in intimate contact with the opposite surface of said n-type gallium arsenide laser cavity-defining layer to define a p-n junction therewith, and a layer of p-type gallium aluminum arsenide disposed atop said p-type gallium arsenide laser cavity-defining layer, said second n-type gallium aluminum arsenide layer having a lower aluminum to gallium ratio than said first layer and said base layer of n-type gallium aluminum arsenide between which it is disposed, the index of refraction of said second layer of n-type gallium aluminum arsenide being higher than the indices of refraction of said first layer and said base layer of n-type gallium aluminum arsenide, said second n-type gallium aluminum arsenide layer serving as a semiconductor waveguide, and said semiconductor laser being optically coupled to said semiconductor waveguide by evanescent fields through said base layer of n-type gallium aluminum arsenide in intimate contact with said semiconductor waveguide for transferring radiation from said semiconductor laser into said semiconductor waveguide.