Multiple double heterojunction buried laser device

Claim 1

A double heterojunction buried laser comprising: a bulk structure having a plurality of semiconductor layers deposited on a substrate and a stripe-like opening formed in said bulk structure through said plurality of layers, said bulk structure semiconductor layers including a first layer deposited on said substrate, said first layer preventing the formation of metallic droplets on said substrate and preventing the diffusion of Group II acceptor dopants therein, said first layer composed of an alloy of Group III-V elements and doped n-type with Group VI elements; a second layer deposited on said first layer, said second layer composed of an alloy of Group III-V elements and doped p-type with a Group II element, said second layer being the p-type material in a p-n junction that blocks the flow of current when said buried laser is forward biased; a third layer deposited on said second layer, said third layer composed of an alloy of Group III-V elements and doped n-type with Group VI elements, said third layer being the n-type material of said p-n junction, and said third layer being a diffusion barrier to the acceptor dopants of said second layer; and a capping fourth layer deposited on said third layer, said fourth layer composed of an alloy of Group III-V elements, said fourth layer facilitating current flow; a double heterojunction laser deposited in said stripe-like opening, said laser having a substantially planar face from which lasing light emits, said laser including a plurality of semiconductor layers, said semiconductor layers including a heterojunction first layer deposited on a bottom side of said stripe-like opening, said heterojunction first layer composed of an alloy of Group III-V elements and doped n-type with Group VI elements, said first layer acting as a diffusion barrier to acceptor dopants; a laser region second layer deposited on said heterojunction first layer, said laser region second layer composed of an alloy of Group III-V elements, said laser region second layer being the active region for lasing action and forming resonant cavity means, said laser region second layer abutting on the sides of said third layer of said bulk structure; a heterojunction third layer deposited on said laser region second layer, said third layer composed of an alloy of Group III-V elements and doped p-type with Group II elements; and a capping fourth layer deposited on said heterojunction third layer, said capping fourth layer composed of an alloy of Group III-V elements, the top of said capping fourth layer being substantially coincident with the top of said capping fourth layer of said bulk structure; and electrical means for providing current paths through said bulk structure and said laser, said electrical means deposited on said bulk structure and said laser.