US4482906A
Expired / Lapsed
US
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Gallium aluminum arsenide integrated circuit structure using germanium
Assignee: International Business Machines Corp
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Filing: 1982-06-30
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Granted: 1984-11-13
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Expires: 2002-06-30
Abstract
Abstract An integrated circuit structure made up of a monocrystalline substrate on which there is an epitaxial intermediate layer of GaAlAs or GaAlAs and Ge with the Ge adjacent to the substrate. The structure is equipped with a single or a combined device epitaxial layer involving GaAs and GaAlAs. The intermediate GaAlAs layer permits substrate, circuit and optical signal application flexibility.
Inventors
- 👤 Harold J. Hovel
- 👤 Robert Rosenberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:02
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F71/00; H10F71/127; H10F71/1272; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/24; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
57 words
An epitaxial layered semiconductor structure comprising in combination a substrate taken from the group of sapphire, spinel and ZnSe, an intermediate layer of the combination of a GaAlAs layer and a Ge layer with the Ge layer adjacent said substrate, and a device portion of at least one layer of GaAs and GaAlAs adjacent the intermediate layer.
Claim 2
Dependent Claim
57 words
An epitaxial layered semiconductor structure comprising in combination a substrate taken from the group of sapphire, spinel and ZnSe, an intermediate layer of the combination of a GaAlAs layer and a Ge layer with the Ge layer adjacent said substrate, and a device portion of at least one layer of GaAs and GaAlAs adjacent the intermediate layer.
Claim 3
Dependent Claim
30 words
The structure of claim 1 wherein said substrate is sapphire, said intermediate layer is a layer of Ge adjacent said substrate and a layer of GaAlAs adjacent said device portion.
Claim 4
Dependent Claim
26 words
The structure of claim 1 wherein said Ge layer is 5 microns thick and said GaAlAs layer is in the range of 2 to 20 microns.
References Cited (Backward Citations)
US4047123A
Cited
US3954534A
Cited
US3963536A
Cited
US4035829A
Cited
US4075651A
Cited
US4212020A
Cited
US4346394A
Cited
US4370510A
Cited
US4385198A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-13 | 1988-05-14 | 1988-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-13 | 1992-05-14 | 1992-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-13 | 1996-05-14 | 1996-11-13 | $7700.00 | Window Closed / Lapsed |