US4047123A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Double heterostructure lasers having reduced microstress
Assignee: International Standard Electric Corp
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Filing: 1975-09-22
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Granted: 1977-09-06
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Expires: 1995-09-22
Abstract
Abstract A conventional construction of light emissive III-V semiconductor device is modified by the inclusion in the active region of the device of not more than 5 atomic percent of a group III or group V substituent of significantly different atomic radius than that of the element for which it is substituted. The microstress field in the neighborhood of dislocation in the active region produces local modification of the concentration of the substituent causing a reduction in the magnitude of the microstress field associated with these dislocations.
Inventors
- 👤 Paul Anthony Kirkby
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:31
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
77 words
An improved double heterostructure laser of the type having an active region consisting of Group III-V material flanked by at least one layer of Group III-V material comprising: an additional Group III material within the active region composition for providing reduced microstress strain in the laser structure; and an additional Group III material within the Group III-V material of the flanking layers wherein the Group III material comprises gallium and the additional Group III material comprises indium.
Claim 2
Dependent Claim
77 words
An improved double heterostructure laser of the type having an active region consisting of Group III-V material flanked by at least one layer of Group III-V material comprising: an additional Group III material within the active region composition for providing reduced microstress strain in the laser structure; and an additional Group III material within the Group III-V material of the flanking layers wherein the Group III material comprises gallium and the additional Group III material comprises indium.
Claim 3
Dependent Claim
13 words
The laser of claim 1 wherein the additional Group III material comprises boron.
Claim 4
Dependent Claim
13 words
The laser of claim 1 wherein the additional Group III material comprises thallium.
Claim 5
Dependent Claim
17 words
The laser of claim 1 wherein the active region contains an additional group V material comprising nitrogen.
Claim 6
Dependent Claim
17 words
The laser of claim 1 wherein the active region contains an additional group V material comprising bismuth.
Claim 7
Dependent Claim
32 words
The laser of claim 1 wherein the indium comprises 0.6 atomic percent of the active region composition and wherein the indium comprises 0.1 atomic percent of the composition of the flanking layers.
Claim 8
Dependent Claim
46 words
The laser of claim 6 wherein the 0.6 atomic percent indium is substituted for 0.6 atomic percent gallium in the composition of the active region and wherein the 0.1 atomic percent indium is substituted for 0.1 atomic percent gallium in the composition of the flanking layers.
References Cited (Backward Citations)
US3982261A
Cited
US3982261B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-05 | 1981-03-07 | 1981-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-05 | 1985-03-07 | 1985-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-05 | 1989-03-07 | 1989-09-06 | $7700.00 | Window Closed / Lapsed |