US4385198A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide-germanium heteroface junction device
Assignee: United States Department of the Air Force
•
Filing: 1981-07-08
•
Granted: 1983-05-24
•
Expires: 2001-07-08
Abstract
Abstract Doping with one of the Group Ia elements Li, Na or K near the heteroface junction produces P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the Group Ia dopant in a Ge wafer. This dopant diffuses into the GaAs when it is subsequently deposited on the Ge.
Inventors
- 👤 W. Patrick Rahilly
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:18
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; H10F10/16; H10F10/164; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1223; H10F77/124; H10F77/1243; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918; Y10S438/933
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
67 words
A multi-junction semiconductor device comprising: a heteroface junction between an inner germanium layer and an inner III-V layer including gallium and arsenic, with both of said layers including a group Ia dopant selected from lithium, sodium and potassium, so that the inner germanium layer has N+ conductivity and the inner III-V layer has P+ conductivity, and the heteroface junction has a low effective resistance in both directions.
Claim 2
Dependent Claim
67 words
A multi-junction semiconductor device comprising: a heteroface junction between an inner germanium layer and an inner III-V layer including gallium and arsenic, with both of said layers including a group Ia dopant selected from lithium, sodium and potassium, so that the inner germanium layer has N+ conductivity and the inner III-V layer has P+ conductivity, and the heteroface junction has a low effective resistance in both directions.
Claim 3
Dependent Claim
83 words
A solar cell comprising the device set forth in claim 1, in which said inner germanium layer is part of a germanium wafer having an outer layer with P-type conductivity so that the inner and outer layers form a lower PN photovoltaic junction; in which said inner III-V layer and an outer III-V layer including gallium and arsenic form an upper PN photovoltaic junction; the lower and upper photovoltaic junctions having different bandgap energies, and being effectively in series through said heteroface junction.
Claim 4
Dependent Claim
19 words
A solar cell as set forth in claim 2, in which both of said III-V layers are gallium arsenide.
Claim 5
Dependent Claim
44 words
A solar cell as set forth in claim 3, further including a high bandgap aluminum gallium arsenide window on said outer III-V layer, on which there is a metallic contact and an antireflective coating, and the outer germanium layer having a metallic contact thereon.
Claim 6
Dependent Claim
44 words
A semiconductor device as set forth in claim 1, in which said inner germanium layer and an outer germanium layer of different conductivity form a junction; and in which said inner III-V layer and an outer III-V layer of different conductivity form a junction.
Claim 7
Dependent Claim
24 words
A semiconductor device as set forth in claim 5, in which said inner III-V layer and said outer III-V layer are both gallium arsenide.
Claim 8
Dependent Claim
25 words
A semiconductor device as set forth in claim 5, in which said inner III-V layer and said outer III-V layer are both aluminum gallium arsenide.
Claim 9
Dependent Claim
27 words
A semiconductor device as set forth in claim 5, in which said inner III-V layer is gallium arsenide and said outer III-V layer is aluminum gallium arsenide.
Claim 10
Dependent Claim
27 words
A semiconductor device as set forth in claim 5, in which said inner III-V layer is aluminum gallium arsenide and said outer III-V layer is gallium arsenide.
Claim 11
Dependent Claim
22 words
A semiconductor device as set forth in claim 6, 7, 8 or 9, in which said outer germanium layer has P-type conductivity.
Claim 12
Dependent Claim
18 words
A semiconductor device as set forth in claim 10, in which said outer III-V layer has N-type conductivity.
Claim 13
Dependent Claim
17 words
A semiconductor device as set forth in claim 10, in which said outer III-V layer is intrinsic.
Claim 14
Dependent Claim
21 words
A semiconductor device as set forth in claim 6, 7, 8 or 9 in which said outer germanium layer is intrinsic.
Claim 15
Dependent Claim
18 words
A semiconductor device as set forth in claim 13, in which said outer III-V layer has N-type conductivity.
Claim 16
Dependent Claim
17 words
A semiconductor device as set forth in claim 13, in which said outer III-V layer is intrinsic.
Claim 17
Dependent Claim
33 words
A semiconductor device as set forth in claim 1, in which the device comprises in order an outer germanium layer, said inner germanium layer, said inner III-V layer, and an outer III-V layer.
Claim 18
Dependent Claim
24 words
A semiconductor device as set forth in claim 16, in which said inner III-V layer and said outer III-V layer are both gallium arsenide.
Claim 19
Dependent Claim
25 words
A semiconductor device as set forth in claim 16, in which said inner III-V layer and said outer III-V layer are both aluminum gallium arsenide.
Claim 20
Dependent Claim
27 words
A semiconductor device as set forth in claim 16, in which said inner III-V layer is gallium arsenide and said outer III-V layer is aluminum gallium arsenide.
Claim 21
Dependent Claim
27 words
A semiconductor device as set forth in claim 16, in which said inner III-V layer is aluminum gallium arsenide and said outer III-V layer is gallium arsenide.
Claim 22
Dependent Claim
32 words
A semiconductor device as set forth in claim 17, 18, 19 or 20 in which said outer germanium layer has P-type conductivity, and in which said outer III-V layer has P-type conductivity.
Claim 23
Dependent Claim
22 words
A semiconductor device as set forth in claim 17, 18, 19 or 20 in which said outer germanium layer has N-type conductivity.
Claim 24
Dependent Claim
18 words
A semiconductor device as set forth in claim 22 in which said outer III-V layer has P-type conductivity.
Claim 25
Dependent Claim
18 words
A semiconductor device as set forth in claim 22 in which said outer III-V layer has N-type conductivity.
Claim 26
Dependent Claim
17 words
A semiconductor device as set forth in claim 22 in which said outer III-V layer is intrinsic.
Claim 27
Dependent Claim
31 words
A semiconductor device as set forth in claim 17, 18, 19 or 20 in which said outer germanium layer is intrinsic, and in which said outer III-V layer has P-type conductivity.
References Cited (Backward Citations)
US4191593A
Cited
US4128733A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-23 | 1986-11-22 | 1987-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-23 | 1990-11-22 | 1991-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-23 | 1994-11-22 | 1995-05-24 | $7700.00 | Window Closed / Lapsed |