US4191593A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Double heterojunction solar cells
Assignee: Centre National d'Études Spatiales
•
Filing: 1978-09-26
•
Granted: 1980-03-04
•
Expires: 1998-09-26
Abstract
Abstract Photovoltaic cell comprising two heterojunctions between three component semiconductors Ga 1-x AL x As with x varying from 0 to 0.9, GaAs, and Ge which have respective bandgaps of 0.66, 1.43 and 2.4 eV, lattice constants matching at 0.07% and expansion coefficients matching at 1.7%. The cell is mounted in a cell device comprising a parallelepipedal unit, a Fresnel lens, a tapering cavity within said unit, partially filled up with a lens shaped antireflecting transparent material and a radiator, said device forming a sunlight concentrator.
Inventors
- 👤 Jean A. Cacheux
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:55
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/161; H10F10/19; H10F77/00; H10F77/40; H10F77/42; H10F77/484; H10F77/488; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
185 words
A photovoltaic cell device comprising: a metal parallelepipedal unit; a tapering cavity inside said unit having a base coinciding with the upper end of the unit and an apex communicating with the lower end of the unit through a hole; a Fresnel lens on the base of the cavity; a transparent antireflecting insert member within said hole and the part of the cavity near the apex thereof, said insert member being terminated at its upper end by a lens shaped part; and against said hole a photovoltaic cell comprising a heterojunction between a first layer of Ga 1-x Al x As of p-type conductivity and a second layer of GaAs of n-type conductivity, x varying from 0 at the junction of the first and second layers to substantially 0.9 at the outer face of the first layer; a homojunction between a third layer of Ge of p-type conductivity and a fourth layer of Ge of n-type conductivity; and a tunnel diode formed by a heavily doped part of the second layer and a heavily doped part of the third layer which are in contact therebetween.
Claim 2
Dependent Claim
185 words
A photovoltaic cell device comprising: a metal parallelepipedal unit; a tapering cavity inside said unit having a base coinciding with the upper end of the unit and an apex communicating with the lower end of the unit through a hole; a Fresnel lens on the base of the cavity; a transparent antireflecting insert member within said hole and the part of the cavity near the apex thereof, said insert member being terminated at its upper end by a lens shaped part; and against said hole a photovoltaic cell comprising a heterojunction between a first layer of Ga 1-x Al x As of p-type conductivity and a second layer of GaAs of n-type conductivity, x varying from 0 at the junction of the first and second layers to substantially 0.9 at the outer face of the first layer; a homojunction between a third layer of Ge of p-type conductivity and a fourth layer of Ge of n-type conductivity; and a tunnel diode formed by a heavily doped part of the second layer and a heavily doped part of the third layer which are in contact therebetween.
Claim 3
Dependent Claim
20 words
A photovoltaic cell device according to claim 2 further comprising a thermal bonded to said unit and to said cell.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-03-04 | 1983-09-03 | 1984-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-03-04 | 1987-09-03 | 1988-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-03-04 | 1991-09-03 | 1992-03-04 | $7700.00 | Window Closed / Lapsed |