US3963536A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making electroluminescent semiconductor devices
Assignee: RCA Corp
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Filing: 1974-11-18
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Granted: 1976-06-15
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Expires: 1994-11-18
Abstract
Abstract In making electroluminescent devices comprised of layers of semiconductor material of different conductivity types, the layers are formed by a liquid phase epitaxy process in which the layer growth rate is accelerated by means of rapid cooling. The rapid cooling during deposition results in a device having resistance to the gradual degradation of light emission.
Inventors
- 👤 Michael Ettenberg
- 👤 Henry Kressel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:45
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
75 words
A method of fabricating an electroluminescent semiconductor device having a recombination region comprising the step of: depositing the semiconductor material of the device from the liquid phase wherein at least the portion deposited in the vicinity of the recombination region of the device is deposited from a solution saturated with the semiconductor material at a rate greater than 10 microns per minute by cooling said saturated solution at a rate greater than 18°C. per minute.
Claim 2
Independent Claim
75 words
A method of fabricating an electroluminescent semiconductor device having a recombination region comprising the step of: depositing the semiconductor material of the device from the liquid phase wherein at least the portion deposited in the vicinity of the recombination region of the device is deposited from a solution saturated with the semiconductor material at a rate greater than 10 microns per minute by cooling said saturated solution at a rate greater than 18°C. per minute.
Claim 3
Dependent Claim
27 words
The method in accordance with claim 1 in which the semiconductor material is an arsenide of gallium, supersaturated with arsenic as a result of the rapid cooling.
Claim 4
Independent Claim
120 words
A method of fabricating a multilayer electroluminescent semiconductor device comprising the steps of: providing at least two separate solutions of an arsenide of gallium in a metal solvent at least one of which is saturated with the arsenide of gallium, with at least a p-type conductivity modifier in one solution and an n-type conductivity modifier in another solution, moving a substrate into each solution in sequence, cooling each of the solutions, when the substrate is moved into a solution, to deposit from the solution a layer of an arsenide of gallium, with at least said saturated solution cooled at a rate greater than 18°C. per minute resulting in deposition at 10 microns per minute from a solution supersaturated with arsenic.
Claim 5
Independent Claim
120 words
A method of fabricating a multilayer electroluminescent semiconductor device comprising the steps of: providing at least two separate solutions of an arsenide of gallium in a metal solvent at least one of which is saturated with the arsenide of gallium, with at least a p-type conductivity modifier in one solution and an n-type conductivity modifier in another solution, moving a substrate into each solution in sequence, cooling each of the solutions, when the substrate is moved into a solution, to deposit from the solution a layer of an arsenide of gallium, with at least said saturated solution cooled at a rate greater than 18°C. per minute resulting in deposition at 10 microns per minute from a solution supersaturated with arsenic.
Claim 6
Dependent Claim
28 words
The method in accordance with claim 3 in which the solution cooled at a rate greater than 18°C. per minute is the solution containing the p-type conductivity modifier.
Claim 7
Dependent Claim
32 words
The method in accordance with claim 4 in which the p-type conductivity modifier is any impurity which can substitute for an arsenic site in the crystal structure of the arsenide of gallium.
Claim 8
Dependent Claim
17 words
The method in accordance with claim 5 in which the p-type conductivity modifier is germanium or tellurium.
Claim 9
Dependent Claim
14 words
The method in accordance with claim 6 in which the metal solvent is gallium.
Claim 10
Dependent Claim
22 words
The method in accordance with claim 7 in which all the solutions are cooled at a rate greater than 18°C. per minute.
References Cited (Backward Citations)
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US3560275A
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US3676228A
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US3713883A
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US3783825A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-15 | 1979-12-15 | 1980-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-15 | 1983-12-15 | 1984-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-15 | 1987-12-15 | 1988-06-15 | $7700.00 | Window Closed / Lapsed |