US3676228A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a p-n junction device
Assignee: Sharp Corp
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Filing: 1970-06-17
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Granted: 1972-07-11
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Expires: 1990-06-17
Abstract
Abstract METHOD OF MAKING P-N JUNCTION DEVICE WHICH USES THE LIQUID PHASE EPITAXIAL GROWTH TECHNIQUE IN WHICH ELEMENTS OF GROUP IV ARE EMPLOYED AS AMPHOTERIC IMPURITIES FOR SEMICONDUCTORS OF COMPOUNDS OF GROUPS III-V. THE GROWTH COOLING RATE IS CHANGED TO GROW NTYPE AND P-TYPE LAYERS SUCCESSIVELY ON THE SUBSTRATE.
Inventors
- 👤 Takeshi Sakurai
- 👤 Zenpei Tani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 03:56
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/08; C30B19/10; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/915
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-11 | 1976-01-10 | 1976-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-11 | 1980-01-10 | 1980-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-11 | 1984-01-10 | 1984-07-11 | $7700.00 | Window Closed / Lapsed |