US3783825A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for the liquid-phase epitaxial growth of multi-layer wafers
Assignee: Panasonic Holdings Corp
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Filing: 1972-03-01
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Granted: 1974-01-08
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Expires: 1992-03-01
Abstract
Abstract An apparatus for the liquid-phase epitaxial growth of multilayer wafer comprising a refractory furnace tube, a boat placed in the furnace tube and having a plurality of bathes which are aligned in the longitudinal direction of the furnace tube and respectively carry solutions each containing semiconductive substances, and a holding member for holding a substrate which is arranged to succeedingly flood the substrate with the solutions so as to epitaxially grow a multi-layer wafer on the substrate. The holding member arranged to upset the substrate upon pickingup or separating of the substrate from the solution so that the solution remained on the substrate is dropped from the substrate whereby unwanted mixing of the solutions neighbouring each other can be avoided.
Inventors
- 👤 H Kobayasi
- 👤 I Akasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:36
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/061; C30B19/062; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
254 words
An apparatus for depositing on a substrate successive epitaxial layers of crystalline semiconductive material from the liquid phase, which comprises; a refractory furnace tube horizontally arranged; heating means associated with said tube; a boat disposed in said furnace tube with the longitudinal axis of said boat extending approximately parallel to the longitudinal axis of said tube; means defining, on an upper surface of said boat, at least two cavities confining therein separate baths of said semiconductive material in molten solutions, said cavities being aligned in a direction parallel to the central longitudinal axis of said furnace tube; support plates provided at the opposite ends of said boat and extending upwardly from the upper surface of the boat and embracing said cavities therebetween; means defining a bore in each of said support plates, said bores being in alignment; and a columnar holding member rotatably slidably mounted through said aligned bores, said holding member having a projection radially extending therefrom, said projection having, on its end portion, said substrate, said projection being disposed on said holding member at a location where it is confined between said support plates during sliding movement of said holding member and being alignable with said cavities, said projection extending outward from said holding members a sufficient distance so that when said holding member is rotated at most through 360 angular degrees said substrate can be brought into contact with a solution in a cavity with which said projection is aligned and subsequently can be moved out of contact with that solution.
Claim 2
Independent Claim
254 words
An apparatus for depositing on a substrate successive epitaxial layers of crystalline semiconductive material from the liquid phase, which comprises; a refractory furnace tube horizontally arranged; heating means associated with said tube; a boat disposed in said furnace tube with the longitudinal axis of said boat extending approximately parallel to the longitudinal axis of said tube; means defining, on an upper surface of said boat, at least two cavities confining therein separate baths of said semiconductive material in molten solutions, said cavities being aligned in a direction parallel to the central longitudinal axis of said furnace tube; support plates provided at the opposite ends of said boat and extending upwardly from the upper surface of the boat and embracing said cavities therebetween; means defining a bore in each of said support plates, said bores being in alignment; and a columnar holding member rotatably slidably mounted through said aligned bores, said holding member having a projection radially extending therefrom, said projection having, on its end portion, said substrate, said projection being disposed on said holding member at a location where it is confined between said support plates during sliding movement of said holding member and being alignable with said cavities, said projection extending outward from said holding members a sufficient distance so that when said holding member is rotated at most through 360 angular degrees said substrate can be brought into contact with a solution in a cavity with which said projection is aligned and subsequently can be moved out of contact with that solution.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-07 | 1977-07-09 | 1978-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-07 | 1981-07-09 | 1982-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-07 | 1985-07-09 | 1986-01-08 | $7700.00 | Window Closed / Lapsed |