US3705825A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Growth layer of semiconductor compounds produced by melt epitaxy
Assignee: Siemens AG
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Filing: 1970-02-10
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Granted: 1972-12-12
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Expires: 1990-02-10
Abstract
Abstract METHOD OF PRODUCING EPITACTIC GROWTH LAYERS OF VARIABLE CONDUCTANCE TYPE BY USE OF SILICON AS THE DOPANT SUBSTANCE WITH COMPOUNDS WHICH EASILY DISSOCIATE AT THE MELTING POINT, PREFERABLY GALLIUM ARSENIDE, BY MELT EPITAXY. THE PRODUCTION OF THE MELT, PROVIDED FOR THE GROWTH PROCESS, AND THE GROWTH PROCESS PER SE ARE EFFECTED UNDER VAPOR PRESSURE OF THE PARTICIPATING MATERIALS IN AN EVACUATED REACTION VESSEL.
Inventors
- 👤 Wolfgang Touchy
- 👤 Eckart Bungeustab
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:20
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/061; C30B19/08; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/107
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-12-12 | 1976-06-12 | 1976-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-12-12 | 1980-06-12 | 1980-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-12-12 | 1984-06-12 | 1984-12-12 | $7700.00 | Window Closed / Lapsed |