Depositing successive epitaxial semiconductive layers from the liquid phase

Abstract

Abstract SUCCESSIVE LAYERS OF CRYSTALLINE SEMICONDUCTIVE MATERIAL ARE DEPOSITED ON A SUBSTRATE FROM THE LIQUID PHASE BY BRINGING ONE SURFACE OF THE SUBSTRATE IN CONTACT WITH A FIRST SOLUTION CONSISTING OF A FIRST SEMICONDUCTIVE MATERIAL DISSOLVED IN A FIRST MOLTEN METALLIC SOLVENT. THE FIRST SOLUTION IS COOLED TO DEPOSIT A FIRST EPITAXIAL LAYER CONSISTING OF SAID FIRST SEMICONDUCTIVE MATERIAL ON THE SUBSTRATE SURFACE. WHILE THE SURFACE OF THE FIRST EPITAXIAL LAYER IS STILL COVERED WITH A LIQUID FILM OF SAID FIRST SOLUTION, THE FIRST EPITAIXIAL LAYER IS BROUGHT IN CONTACT WITH A SECOND SOLUTION CONSISTING OF A SECOND SEMICONDUCTIVE MATERIAL DISSOLVED IN A SECOND MOLTEN METALLIC SOLVENT. THE SECOND SOLUTION IS COOLED TO DEPOSIT A SECOND EPITAXIAL LAYER CONSISTING OF THE SECOND SEMICONDUCTIVE MATERIAL ON THE FIRST EPITAXIAL LAYER. ACCORDING TO ONE EMBODIMENT, THE FIRST AND SECOND SOLUTIONS CONSIST OF THE SAME SEMICONDUCTIVE MATERIALS DISSOLVED IN THE SAME SOLVENTS, BUT THE FIRST SOLUTION CONTAINS A CONDUCTIVITY MODIFIER OR GIVEN CONDUCTIVITY TYPE, WHILE THE SECOND SOLUTION CONTAINS A CONDUCTIVITY MODIFIER OF THE OPPOSITE CONDUCTIVITY TYPE.

Inventors

• 👤 Herbert Nelson

Bibliographic Details