US3752713A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor elements by liquid phase epitaxial growing method
Assignee: Oki Electric Industry Co Ltd
•
Filing: 1971-02-10
•
Granted: 1973-08-14
•
Expires: 1991-02-10
Abstract
Abstract A SEMICONDUCTOR ELEMENT OF MULTI-LAYER CONSTRUCTION WITH P-N JUCTIONS BETWEEN LAYERS IS PREPARED BY CONTACTING A SEMICONDUCTOR SUBSTRATE WITH A SOLUTION CONTAINING AT LEAST THREE ELEMENTS OF GROUPS III AND V AND DOPED WITH A P-TYPE IMPURITY AND A N-TYPE IMPURITY, CONTACTING A SEMICONDUCTOR SUBSTRATE WITH THE SOLUTION, HEATING THE SEMICONDUCTOR SUBSTRATE AND THE SOLUTION TO A PREDETERMINED TEMPERATURE AND REPEATING ALTERNATELY A RELATIVELY SLOW COOLING AND A RELATIVELY FAST COOLING TO GROW LAYERS OF SEMICONDUCTOR CRYSTALS OF THE III-V COMPOUNDS.
Inventors
- 👤 M Sakuta
- 👤 T Ishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 02:09
CPC Classifications
H; H10; H10D; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/065; Y10S148/067; Y10S148/072; Y10S148/107
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-13 | 1977-02-12 | 1977-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-13 | 1981-02-12 | 1981-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-13 | 1985-02-12 | 1985-08-14 | $7700.00 | Window Closed / Lapsed |