US5053835A
Expired / Lapsed
US
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Inp semiconductor thin film on si
Assignee: Oki Electric Industry Co Ltd
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Filing: 1990-07-31
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Granted: 1991-10-01
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Expires: 2010-07-31
Abstract
Abstract An InP semiconductor thin film is formed by a process in which an amorphous GaAs buffer layer having a good surface flatness, and then an amorphous InP buffer layer having a good surface flatness are formed on an Si substrate, and then an InP monocrystalline thin film is grown on the InP buffer layer. GaAs has a lattice constant intermediate between Si used as the substrate and InP, so the lattice mismatch is reduced.
Inventors
- 👤 Hideaki Horikawa
- 👤 Masahiro Akiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:48
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10F; H10F71/00; H10F71/127; H10F71/1276; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3256; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/072; Y10S148/097; Y10S438/00; Y10S438/938
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
40 words
An InP semiconductor thin film comprising: a Si substrate; a GaAs buffer layer formed on the Si substrate; an InP buffer layer formed on the GaAs buffer layer; and an InP monocrystalline thin film formed on the InP buffer layer.
Claim 2
Dependent Claim
40 words
An InP semiconductor thin film comprising: a Si substrate; a GaAs buffer layer formed on the Si substrate; an InP buffer layer formed on the GaAs buffer layer; and an InP monocrystalline thin film formed on the InP buffer layer.
Claim 3
Dependent Claim
20 words
An InP semiconductor thin film according to claim 1, wherein said Si substrate has a surface with substantially (100) orientation.
Claim 4
Dependent Claim
19 words
An InP semiconductor thin film according to claim 1, wherein said GaAs buffer layer is an amorphous GaAs layer.
Claim 5
Dependent Claim
19 words
An InP semiconductor thin film according to claim 1, wherein said InP buffer layer is an amorphous InP layer.
References Cited (Backward Citations)
US4561916A
Cited
EP0291346A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-09-30 | 1995-04-01 | 1995-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-30 | 1999-04-01 | 1999-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-30 | 2003-04-01 | 2003-10-01 | $7700.00 | Window Closed / Lapsed |