Rapid thermal annealing of superconducting oxide precursor films on Si and SiO2 substrates

Claim 1

A method of making a superconducting metal oxide film on a substrate selected from the group consisting of silicon and silicon dioxide, said method comprising: depositing a thin film of a superconducting metal oxide precursor consisting essentially of R, Ba, Cu, and O by a physical deposition technique directly onto said substrate in a thickness between about 0.1 and 3 μm to form a film/substrate composite, wherein R is selected from the group consisting of rare earth elements and yttrium, which precursor film can be annealed in an oxygen atmosphere to yield a superconducting metal oxide film; then heating said film/substrate composite to a temperature between about 800° C. and 950° C. in less than about 10 seconds; then maintaining said film/substrate composite at said temperature in an oxygen atmosphere for between about 5 and 25 seconds to anneal said film; and then cooling said film/substrate composite to less than 300° C. in less than about 3 minutes.

Claim 2

A method of making a superconducting metal oxide film on a substrate selected from the group consisting of silicon and silicon dioxide, said method comprising: depositing a thin film of a superconducting metal oxide precursor consisting essentially of R, Ba, Cu, and O by a physical deposition technique directly onto said substrate in a thickness between about 0.1 and 3 μm to form a film/substrate composite, wherein R is selected from the group consisting of rare earth elements and yttrium, which precursor film can be annealed in an oxygen atmosphere to yield a superconducting metal oxide film; then heating said film/substrate composite to a temperature between about 800° C. and 950° C. in less than about 10 seconds; then maintaining said film/substrate composite at said temperature in an oxygen atmosphere for between about 5 and 25 seconds to anneal said film; and then cooling said film/substrate composite to less than 300° C. in less than about 3 minutes.

Claim 10

A method of making a superconducting metal oxide film on a substrate selected from the group consisting of silicon and silicon dioxide, said method comprising: depositing a thin film of a superconducting metal oxide precursor consisting essentially of R, Ba, Cu, and O by a sputtering technique directly onto said substrate in a thickness between about 0.1 and 3 μm to form a film/substrate composite, wherein R is selected from the group consisting of rare earth elements and yttrium, which precursor film can be annealed in an oxygen atmosphere to yield a superconducting metal oxide film; then heating said film/substrate composite to a temperature between about 850° C. and 950° C. in an oxygen atmosphere in less than about 10 seconds; then maintaining said film/substrate composite at said temperature in said oxygen atmosphere for between about 5 and 25 seconds to anneal said film; and then cooling said film/substrate composite to less than 300° C. in less than about 3 minutes.

Claim 11

A method of making a superconducting metal oxide film on a substrate selected from the group consisting of silicon and silicon dioxide, said method comprising: depositing a thin film of a superconducting metal oxide precursor consisting essentially of R, Ba, Cu, and O by a sputtering technique directly onto said substrate in a thickness between about 0.1 and 3 μm to form a film/substrate composite, wherein R is selected from the group consisting of rare earth elements and yttrium, which precursor film can be annealed in an oxygen atmosphere to yield a superconducting metal oxide film; then heating said film/substrate composite to a temperature between about 850° C. and 950° C. in an oxygen atmosphere in less than about 10 seconds; then maintaining said film/substrate composite at said temperature in said oxygen atmosphere for between about 5 and 25 seconds to anneal said film; and then cooling said film/substrate composite to less than 300° C. in less than about 3 minutes.