Abstract A layer of HgCdTe (15) epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrated (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500° C. and 625° C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400° C. and 500° C. for a time of between 1 hour and 16 hours. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the finished HgCdTe layer (15).
A method for fabricating a single compositionally homogeneous epitaxial layer of Hg 1-x Cd x Te, having a thickness of between 0.7 micron to 30 microns, on a crystalline support, where x is the atomic fraction of cadmium in the layer and is between 0 and 1, said method comprising the steps of: epitaxially growing a CdTe substrate between 1 micron and 5 microns thick onto the crystalline support; spacing a HgTe source a distance of between 0.1 mm and 10 mm away from the CdTe substrate; and heating the HgTe and CdTe coated support within a temperature range of between 500° C. and 625° C. for a time of greater than 4 hours and less than 13 hours, so that all of the CdTe is converted to Hg 1-x Cd x Te having a uniform composition and epitaxially attached to the crystalline support.
Claim 2
Independent Claim
144 words
A method for fabricating a single compositionally homogeneous epitaxial layer of Hg 1-x Cd x Te, having a thickness of between 0.7 micron to 30 microns, on a crystalline support, where x is the atomic fraction of cadmium in the layer and is between 0 and 1, said method comprising the steps of: epitaxially growing a CdTe substrate between 1 micron and 5 microns thick onto the crystalline support; spacing a HgTe source a distance of between 0.1 mm and 10 mm away from the CdTe substrate; and heating the HgTe and CdTe coated support within a temperature range of between 500° C. and 625° C. for a time of greater than 4 hours and less than 13 hours, so that all of the CdTe is converted to Hg 1-x Cd x Te having a uniform composition and epitaxially attached to the crystalline support.
Claim 3
Dependent Claim
68 words
The method of claim 1 wherein the processing time t of the heating step is calculated from the equation t=(d/k) 2 where d is the desired thickness of the layer; and k is an experimentally determined constant that is proportional to the temperature during the heating step, is inversely proportional to x, and is a function of the geometrical relationship between the HgTe and the CdTe coated support.