US5144409A
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Isotopically enriched semiconductor devices
Assignee: Yale University
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Filing: 1990-11-16
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Granted: 1992-09-01
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Expires: 2010-11-16
Abstract
Abstract A semiconductor structure including a single-crystal region composed of an isotopically enriched semiconductor material, and a semiconductor device formed in the isotopically enriched semiconductor region.
Inventors
- 👤 Tso-Ping Ma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:06
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/85; H10H20/824; H01; H01S; H01S5/00; H01S5/02; H01S5/024; H01S5/02461
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
40 words
A semiconductor structure comprising: a single-crystal region composed of an isotopically enriched silicon having a higher proportion of the 28 Si isotope than is present in naturally occurring silicon; and a semiconductor device formed within said isotopically enriched single-crystal region.
Claim 2
Dependent Claim
40 words
A semiconductor structure comprising: a single-crystal region composed of an isotopically enriched silicon having a higher proportion of the 28 Si isotope than is present in naturally occurring silicon; and a semiconductor device formed within said isotopically enriched single-crystal region.
Claim 3
Dependent Claim
25 words
The semiconductor structure of claim 1 further comprising a substrate and wherein said isotopically enriched semiconductor region is formed on one surface of said substrate.
Claim 4
Dependent Claim
22 words
The semiconductor structure of claim 2 wherein said isotopically enriched semiconductor region is a layer formed on one surface of said substrate.
Claim 5
Dependent Claim
18 words
The semiconductor structure of claim 1 wherein said single-crystal region is composed of at least 94% 28 Si.
Claim 6
Dependent Claim
18 words
The semiconductor structure of claim 4 wherein said single-crystal region is composed of at least 98% 28 Si.
Claim 7
Dependent Claim
44 words
The semiconductor structure of claim 1 wherein said isotopically enriched silicon exhibits higher carrier mobilities and/or thermal conductivity in comparison to naturally occurring forms of silicon and wherein said semiconductor device exhibits improved device performance due to said higher carrier mobilities and/or thermal conductivity.
Claim 8
Dependent Claim
28 words
A semiconductor structure comprising a single-crystal GaAs region wherein the gallium in said GaAs region is composed of at least 94% of one of the isotopes of Ga.
Claim 9
Dependent Claim
28 words
A semiconductor structure comprising a single-crystal GaAs region wherein the gallium in said GaAs region is composed of at least 94% of one of the isotopes of Ga.
Claim 10
Dependent Claim
24 words
The semiconductor structure of claim 7 further comprising a substrate and wherein said single-crystal GaAs region is formed on one surface of said substrate.
Claim 11
Dependent Claim
25 words
The semiconductor structure of claim 7 or 8 wherein the gallium in said single-crystal GaAs region is composed of at least 94% of 69 Ga.
Claim 12
Dependent Claim
25 words
The semiconductor structure of claim 9 wherein the proportion of 69 Ga in the gallium in said single-crystal GaAs region is no less than 98%.
Claim 13
Dependent Claim
24 words
A semiconductor structure comprising: a single-crystal region composed of an isotopically enriched germanium; and a semiconductor device formed by using said isotopically enriched region.
Claim 14
Dependent Claim
24 words
A semiconductor structure comprising: a single-crystal region composed of an isotopically enriched germanium; and a semiconductor device formed by using said isotopically enriched region.
Claim 15
Dependent Claim
28 words
The semiconductor structure of claim 11 wherein said single-crystal region has a higher proportion of one of the isotopes of Ge than is present in naturally occurring germanium.
Claim 16
Dependent Claim
26 words
The semiconductor structure of claim 12 wherein said single-crystal region has a higher proportion of the 74 Ge isotope than is present in naturally occurring germanium.
Claim 17
Dependent Claim
18 words
The semiconductor structure of claim 13 wherein said single-crystal region is composed of at least 94% 74 Ge.
Claim 18
Dependent Claim
18 words
The semiconductor structure of claim 14 wherein said single-crystal region is composed of at least 98% 74 Ge.
Claim 19
Dependent Claim
25 words
A semiconductor structure comprising: a single-crystal region composed of an isotopically enriched GaAS; and a semiconductor device formed by using said isotopically enriched region. PG,29
Claim 20
Dependent Claim
25 words
A semiconductor structure comprising: a single-crystal region composed of an isotopically enriched GaAS; and a semiconductor device formed by using said isotopically enriched region. PG,29
Claim 21
Dependent Claim
31 words
The semiconductor structure of claim 16 wherein the gallium in said single-crystal region has a higher proportion of one of the isotopes of Ga than is present in naturally occurring gallium.
Claim 22
Dependent Claim
29 words
The semiconductor structure of claim 17 wherein the gallium in said single-crystal region has a higher proportion of the 69 Ga isotope than is present in naturally occurring germanium.
Claim 23
Dependent Claim
21 words
The semiconductor structure of claim 18 wherein the gallium in said single-crystal region is composed of at least 94% 69 Ga.
Claim 24
Dependent Claim
21 words
The semiconductor structure of claim 19 wherein said gallium in said single-crystal region is composed of at least 98% 69 Ga.
Claim 25
Dependent Claim
17 words
The semiconductor structure of claim 1, 11, or 16 wherein the semiconductor device is an electronic device.
Claim 26
Dependent Claim
17 words
The semiconductor structure of claim 1, 11, or 16 wherein the semiconductor device is an electro-optical device.
Claim 27
Dependent Claim
17 words
The semiconductor structure of claim 1, 11, or 16 wherein the semiconductor device is an opto-electronic device.
Claim 28
Dependent Claim
21 words
The semiconductor structure of claim 1, 11, or 16 further comprising an integrated circuit fabricated in the isotopically enriched semiconductor region.
Claim 29
Dependent Claim
24 words
The semiconductor structure of claim 1, 11, or 16 wherein said isotopically enriched semiconductor region primarily serves to provide heat dissipation for said device.
References Cited (Backward Citations)
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