US5356831A
Expired / Lapsed
US
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Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
Assignee: Eaton Corp
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Filing: 1992-10-28
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Granted: 1994-10-18
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Expires: 2012-10-28
Abstract
Abstract A semiconductor device and processing technique is provided for monolithic integration of a single crystal compound element semiconductor on a ceramic substrate. A high resistivity semi-insulating buffer layer is epitaxially grown on the ceramic substrate and has an elastically transitional lattice constant matching at its lower surface the lattice constant of the ceramic substrate, and matching at its upper surface the lattice constant of the semiconductor layer.
Inventors
- 👤 Joseph A. Calviello
- 👤 Grayce A. Hickman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:02
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10N; H10N69/00; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/072; Y10S148/097; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/703; Y10S505/704
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
46 words
A semiconductor processing technique for depositing a single crystal compound semiconductor layer on a ceramic substrate, comprising: providing a ceramic substrate; growing a superlattice-strained-structure of sequential layers of CaF 2 and SrF 2 on said substrate; epitaxially growing a compound element semiconductor layer on said superlattice-strained-structure.
Claim 2
Dependent Claim
46 words
A semiconductor processing technique for depositing a single crystal compound semiconductor layer on a ceramic substrate, comprising: providing a ceramic substrate; growing a superlattice-strained-structure of sequential layers of CaF 2 and SrF 2 on said substrate; epitaxially growing a compound element semiconductor layer on said superlattice-strained-structure.
Claim 3
Dependent Claim
92 words
The invention according to claim 1 comprising epitaxially growing a first CaF 2 layer on said substrate, then epitaxially growing a first SrF 2 layer on said first CaF 2 layer, then epitaxially growing a second CaF 2 layer on said first SrF 2 layer, then epitaxially growing a second SrF 2 layer on said second CaF 2 layer, and so on to a desired number of pairs of said CaF 2 and SrF 2 layers, and then epitaxially growing said compound element semiconductor layer on the uppermost said SrF 2 layer.
Claim 4
Dependent Claim
42 words
The invention according to claim 1 comprising growing said CaF 2 layer on said substrate and during said growth gradually decreasing Ca dopant concentration and gradually increasing Sr dopant concentration to gradually transition said CaF 2 layer to said SrF 2 layer.
Claim 5
Dependent Claim
50 words
A semiconductor processing technique for depositing a single crystal compound semiconductor layer on a ceramic substrate, comprising: providing a ceramic substrate; providing a superlattice-strained-structure of sequential layers of CaF 2 , SrF 2 , and BaF 2 on said substrate; epitaxially growing a compound element semiconductor layer on said superlattice-strained-structure.
Claim 6
Dependent Claim
50 words
A semiconductor processing technique for depositing a single crystal compound semiconductor layer on a ceramic substrate, comprising: providing a ceramic substrate; providing a superlattice-strained-structure of sequential layers of CaF 2 , SrF 2 , and BaF 2 on said substrate; epitaxially growing a compound element semiconductor layer on said superlattice-strained-structure.
Claim 7
Dependent Claim
122 words
The invention according to claim 4 comprising . epitaxially growing a first CaF 2 on said substrate, then epitaxially growing a first SrF 2 on said first CaF 2 layer, then epitaxially growing a first BaF 2 layer on said first SrF 2 layer, then epitaxially growing a second CaF 2 layer on said first BaF 2 layer, then epitaxially growing a second SrF 2 layer on said second CaF 2 layer, then epitaxially growing a second BaF 2 layer on said second SrF 2 layer, and so on to a desired number of sets of said CaF 2 , SrF 2 and BaF 2 layers, and then epitaxially growing said compound element semiconductor layer on the uppermost said BaF 2 layer.
Claim 8
Dependent Claim
70 words
The invention according to claim 5 comprising epitaxially growing said CaF 2 layer on said substrate and during said growth gradually decreasing Ca dopant concentration and gradually increasing Sr dopant concentration to gradually transition said CaF 2 layer to said SrF 2 layer, and during continued growth gradually decreasing Sr dopant concentration and gradually increasing Ba dopant concentration to gradually transition said SrF 2 layer to said BaF 2 layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-17 | 1998-04-18 | 1998-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-17 | 2002-04-18 | 2002-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-17 | 2006-04-18 | 2006-10-18 | $7700.00 | Window Closed / Lapsed |