US4837536A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic microwave integrated circuit device using high temperature superconductive material
Assignee: NEC Corp
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Filing: 1988-07-25
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Granted: 1989-06-06
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Expires: 2008-07-25
Abstract
Abstract For reduction in occupation area, there is disclosed a microwave device fabricated on a semi-insulating substrate and comprising a passive component area where a plurality of passive component elements are formed and an active component area where at least one active element is formed, the passive component area having a film overlain by a dielectric film and a strip conductor extending on the dielectric film, wherein the film and the strip conductor are formed by a superconductive material, so that the dielectric material is decreased in thickness by virtue of the strip conductor of the superconductive material.
Inventors
- 👤 Kazuhiko Honjo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:01
CPC Classifications
H; H01; H01P; H01P3/00; H01P3/02; H01P3/08; H01P3/081; Y; Y10; Y10S; Y10S505/00; Y10S505/825; Y10S505/866
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
70 words
A microwave device fabricated on a semi-insulating substrate and comprising a passive component area where a plurality of passive component elements are formed and an active component area where at least one active element is formed, said passive component area having a film overlain by a dielectric film and a strip conductor extending on said dielectric film, wherein said film and said strip conductor are formed of a superconductive material.
Claim 2
Dependent Claim
70 words
A microwave device fabricated on a semi-insulating substrate and comprising a passive component area where a plurality of passive component elements are formed and an active component area where at least one active element is formed, said passive component area having a film overlain by a dielectric film and a strip conductor extending on said dielectric film, wherein said film and said strip conductor are formed of a superconductive material.
Claim 3
Dependent Claim
28 words
A microwave device as set forth in claim 1, in which said superconductive material is represented by a molecular formula of YBa 2 Cu 3 O 7 .
Claim 4
Dependent Claim
26 words
A microwave device as set forth in claim 2, in which said strip conductor has a width ranging between about 1 micron and about 5 microns.
Claim 5
Dependent Claim
30 words
A microwave device as set forth in claim 1, in which said dielectric film is formed of a dielectric material having a dielectric constant equal to or larger than 40.
Claim 6
Dependent Claim
24 words
A microwave device as set forth in claim 4, in which said dielectric material is composed of a titanium oxide and a barium oxide.
Claim 7
Dependent Claim
25 words
A microwave device as set forth in claim 1, in which said passive element area further has a capacitor electrode formed on said dielectric film.
Claim 8
Dependent Claim
19 words
A microwave device as set forth in claim 6, in which said semi-insulating substrate is formed of gallium arsenide.
Claim 9
Dependent Claim
62 words
A microwave device as set forth in claim 7, in which said active component element is a field effect transistor having an active region formed in said semi-insulating substrate, source and drain regions formed on the semi-insulating substrate in such a manner as to be in contact with the active region, and a gate electrode formed between the source and drain regions.
Claim 10
Dependent Claim
19 words
A microwave device as set forth in claim 8, in which said active region is an n-type semiconductor region.
Claim 11
Dependent Claim
81 words
A microwave device fabricated on a semi-insulating gallium arsenide substrate and comprising a plurality of passive component areas each formed with a plurality of passive component elements and an active component area formed with at least one active element, said passive component area having a film overlain by a dielectric film, two strip conductors extending on said dielectric film and a capacitor electrode formed on said dielectric film, wherein said film and said strip conductors are formed of a superconductive material.
Claim 12
Dependent Claim
81 words
A microwave device fabricated on a semi-insulating gallium arsenide substrate and comprising a plurality of passive component areas each formed with a plurality of passive component elements and an active component area formed with at least one active element, said passive component area having a film overlain by a dielectric film, two strip conductors extending on said dielectric film and a capacitor electrode formed on said dielectric film, wherein said film and said strip conductors are formed of a superconductive material.
Claim 13
Dependent Claim
101 words
A microwave device as set forth in claim 10, in which said active component element of one active component area is a field effect transistor coupled at one end thereof to a ground terminal and at the other end thereof to an intermediate node, wherein said passive component elements have two micro-strip lines respectively formed with said strip conductors coupled in series between the ground terminal and the intermediate node and a capacitor coupled between the intermediate node and an output node, said output node being coupled to a gate electrode of a field effect transistor of another active component area.
Claim 14
Dependent Claim
83 words
A microwave device as set forth in claim 11, in which said microwave device further comprises additional passive component area provided with a series combination of a first micro-strip line with a strip conductor of said superconductive material and a capacitor coupled between an input terminal and said ground terminal and a second micro-strip line with a strip conductor of the superconductive material coupled between the input terminal and a gate electrode of a field effect transistor of said one active component area.
References Cited (Backward Citations)
US3191055A
Cited
US4423430A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-05 | 1992-12-05 | 1993-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-05 | 1996-12-05 | 1997-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-05 | 2000-12-05 | 2001-06-06 | $7700.00 | Window Closed / Lapsed |