US4473938A
Expired / Lapsed
US
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Method for making a GaN electroluminescent semiconductor device utilizing epitaxial deposition
Assignee: Panasonic Holdings Corp
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Filing: 1983-04-12
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Granted: 1984-10-02
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Expires: 2003-04-12
Abstract
Abstract An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.
Inventors
- 👤 Hiroyuki Kobayashi
- 👤 Yoshimasa Ohki
- 👤 Yukio Toyoda
- 👤 Isamu Akasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:04
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y10; Y10S; Y10S117/00; Y10S117/913
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
84 words
A method for making an electroluminescent semiconductor device comprising the steps of: providing a heat treatment on a body of sapphire in an environment containing a compound GaX, where X is chlorine, iodine or bromine; successively epitaxially depositing gallium nitride on said sapphire body without doping to form a layer of conductive region and an overlying layer of resistive region on said conductive region; and epitaxially depositing gallium nitride on said resistive region in an environment containing acceptor impurities to form an insulative layer.
Claim 2
Independent Claim
84 words
A method for making an electroluminescent semiconductor device comprising the steps of: providing a heat treatment on a body of sapphire in an environment containing a compound GaX, where X is chlorine, iodine or bromine; successively epitaxially depositing gallium nitride on said sapphire body without doping to form a layer of conductive region and an overlying layer of resistive region on said conductive region; and epitaxially depositing gallium nitride on said resistive region in an environment containing acceptor impurities to form an insulative layer.
Claim 3
Dependent Claim
25 words
A method as claimed in claim 1, wherein said heat treatment is provided at a temperature higher than 850° C. for at least two minutes.
Claim 4
Dependent Claim
85 words
A method as claimed in claim 1, further comprising the step of scratching a portion of a surface of said sapphire body prior to said heat treatment to permit said successively epitaxially deposited gallium nitride to form a high conductivity region extending from said scratched portion to a surface of said insulative layer; and forming a pair of contacts electrically connected to spaced points on said surface of said insulative layer, one of said spaced points being in electrically contact with said high conductivity region.
Claim 5
Dependent Claim
44 words
A method as claimed in claim 1, further comprising the step of providing a heat treatment on said sapphire body in an environment containing a compound of GaX, where X is chlorine, iodine or bromine before said gallium nitride is epitaxially deposited without doping.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-02 | 1988-04-02 | 1988-10-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-02 | 1992-04-02 | 1992-10-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-02 | 1996-04-02 | 1996-10-02 | $7700.00 | Window Closed / Lapsed |