US3922703A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electroluminescent semiconductor device
Assignee: RCA Corp
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Filing: 1974-04-03
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Granted: 1975-11-25
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Expires: 1994-04-03
Abstract
Abstract A gallium nitride electroluminescent semiconductor element and a silicon semiconductor element are on the same substrate. The gallium nitride semiconductor element and silicon semiconductor element are electrically connected with the silicon semiconductor element as a driving or switching circuit for the gallium nitride electroluminescent semiconductor element.
Inventors
- 👤 Jacques Isaac Pankove
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 01:29
CPC Classifications
H; H10; H10D; H10D99/00; H10D86/00; H10H; H10H20/00; H10H20/80; Y; Y10; Y10S; Y10S148/00; Y10S148/059; Y10S148/065; Y10S148/072; Y10S148/113; Y10S148/15
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
132 words
AN ELECTROLUMINESCENT SEMICONDUCTOR DEVICE COMPRISING: A TRANSPARENT SUBSTRATE WITH A SURFACE; A SILICON SEMICONDUCTOR ELEMENT AT SAID SURFACE; AND A GALLIUM NITRIDE ELECTROLUMINESCENT SEMICONDUCTOR ELEMENT ON SAID SURFACE, ELECTRICALLY CONNECTED TO SAID SILICON SEMICONDUCTOR ELEMENT, AND HAVING; A. A LAYER OF N+ HIGHLY CONDUCTIVE GALLIUM NITRIDE ON SAID SUBSTRATE: B. AN INSULATING LAYER OF GALLIUM NITRIDE ON SAID CONDUCTIVE GALLIUM NITRIDE LAYER AND ON SAID SUBSTRATE, SUCH THAT LIGHT GENERATED IN SAID INSULATING GALLIUM NITRIDE LAYER PASSES THROUGH SAI CONDUCTIVE GALLIUM NITRIDE LAYER AND SAID SUBSTRATE AND IS EMITTED FROM SAID DEVICE; C. AN ELECTRODE ON SAID LAYER OF CONDUCTIVE GALLIUM NITRIDE; AND D. AN INTER-ELEMENT CONTACT ON SAID LAYER OF INSULATING GALLIUM NITRIDE AND SAID SILICON SEMICONDUCTOR ELEMENT, ELECTRICALLY CONNECTING SAID GALLIUM NITRIDE ELECTROLUMINESCENT SEMICONDUCTOR ELEMENT TO SAID SILICON SEMICONDUCTOR ELEMENT.
Claim 2
Dependent Claim
132 words
AN ELECTROLUMINESCENT SEMICONDUCTOR DEVICE COMPRISING: A TRANSPARENT SUBSTRATE WITH A SURFACE; A SILICON SEMICONDUCTOR ELEMENT AT SAID SURFACE; AND A GALLIUM NITRIDE ELECTROLUMINESCENT SEMICONDUCTOR ELEMENT ON SAID SURFACE, ELECTRICALLY CONNECTED TO SAID SILICON SEMICONDUCTOR ELEMENT, AND HAVING; A. A LAYER OF N+ HIGHLY CONDUCTIVE GALLIUM NITRIDE ON SAID SUBSTRATE: B. AN INSULATING LAYER OF GALLIUM NITRIDE ON SAID CONDUCTIVE GALLIUM NITRIDE LAYER AND ON SAID SUBSTRATE, SUCH THAT LIGHT GENERATED IN SAID INSULATING GALLIUM NITRIDE LAYER PASSES THROUGH SAI CONDUCTIVE GALLIUM NITRIDE LAYER AND SAID SUBSTRATE AND IS EMITTED FROM SAID DEVICE; C. AN ELECTRODE ON SAID LAYER OF CONDUCTIVE GALLIUM NITRIDE; AND D. AN INTER-ELEMENT CONTACT ON SAID LAYER OF INSULATING GALLIUM NITRIDE AND SAID SILICON SEMICONDUCTOR ELEMENT, ELECTRICALLY CONNECTING SAID GALLIUM NITRIDE ELECTROLUMINESCENT SEMICONDUCTOR ELEMENT TO SAID SILICON SEMICONDUCTOR ELEMENT.
Claim 3
Dependent Claim
89 words
The electroluminescent semiconductor device in accordance with claim 1 in which said silicon semiconductor element is a field-effect transistor comprising: a silicon layer with three conductivity regions on said transparent substrate, said three conductivity regions are a drain, a channel and a source; a source contact on said source region; said inter-element contact is on said drain region and said gallium nitride electroluminescent semiconductor element; a layer of insulating material on said silicon layer; and a gate electrode on said layer of insulating material directly over said channel region.
Claim 4
Dependent Claim
16 words
The electroluminescent semiconductor device in accordance with claim 2 in which said substrate is transparent sapphire.
Claim 5
Dependent Claim
106 words
An electroluminescent semiconductor device comprising: a substrate with a surface; a silicon semiconductor element at said surface; and a gallium nitride electroluminescent semiconductor element on said surface, electrically connected to said silicon semiconductor element, and having; a. a layer of insulating gallium nitride on said substrate and said silicon semiconductor element, forming electrical connections with said silicon semiconductor elements; b. a layer of conductive gallium nitride on said insulating gallium nitride layer and said substrate, such that light generated in said insulating gallium nitride layer passes through said conductive layer of gallium nitride; and c. an electrode on said conductive gallium nitride layer and said substrate.
Claim 6
Dependent Claim
106 words
An electroluminescent semiconductor device comprising: a substrate with a surface; a silicon semiconductor element at said surface; and a gallium nitride electroluminescent semiconductor element on said surface, electrically connected to said silicon semiconductor element, and having; a. a layer of insulating gallium nitride on said substrate and said silicon semiconductor element, forming electrical connections with said silicon semiconductor elements; b. a layer of conductive gallium nitride on said insulating gallium nitride layer and said substrate, such that light generated in said insulating gallium nitride layer passes through said conductive layer of gallium nitride; and c. an electrode on said conductive gallium nitride layer and said substrate.
Claim 7
Dependent Claim
58 words
The electroluminescent semiconductor device in accordance with claim 4 in which said silicon semiconductor element is a field-effect transistor having a layer of single crystalline silicon with three conductivity regions, said three conductivity regions are a drain, a channel and source, and said layer of insulating gallium nitride is on said drain region, forming an electrical contact therebetween.
Claim 8
Dependent Claim
16 words
The electroluminescent semiconductor device in accordance with claim 5 in which said substrate is transparent sapphire.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-11-24 | 1979-05-26 | 1979-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-11-24 | 1983-05-26 | 1983-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-11-24 | 1987-05-26 | 1987-11-25 | $7700.00 | Window Closed / Lapsed |