Semiconductor device fabrication
Abstract
Abstract A FIRST LAYER OF SEMICONDUCTOR MATERIAL IS PROVIDED ON AN INSULATING SUBSTRATE AND DEFINED TO FORM A FIRST REGION. A MASKING LAYER IS PROVIDED ON THE FIRST REGION PREFERABLY COVERING ALL THE EXPOSED SURFACES THEREOF. A SECOND LAYER OF SEMICONDUCTOR MATERIAL, HAVING CONDUCTIVITY CHARACTERISTICS DIFFERENT FROM THAT OF THE FIRST LAYER, IS FORMED ON THE FIRST REGION AND ON THE SUBSTRATE. USING AN ETCHANT WHICH DOES NOT ATTACK THE MASKING LAYER, THE SECOND LAYER IS DEFINED TO FORM A SECOND REGION SPACED FROM THE FIRST REGION. THEREAFTER A COMPONENT IS FORMED WITHIN EACH OF THE TWO REGIONS, THE COMPONENT OF THE FIRST REGION HAVING DIFFERENT ELECTRICAL CHARACTERISTICS FROM THE COMPONENT OF THE SECOND REGION.
Inventors
- 👤 J Scott
Bibliographic Details
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