US3728591A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gate protective device for insulated gate field-effect transistors
Assignee: RCA Corp
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Filing: 1971-09-03
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Granted: 1973-04-17
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Expires: 1991-09-03
Abstract
Abstract The protective device comprises a thin film of semiconductor material on an insulating substrate, contiguous regions of the film being of opposite conductivity type and providing a plurality of serially connected diodes in back-to-back relationship. Disposed on the surface of various different ones of the regions are layers of metal for reducing the electrical resistance of the device. The device is connected between the gate electrode of the transistor to be protected and either the source or drain electrode thereof.
Inventors
- 👤 R Sunshine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:33
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; H10D89/00; H10D89/60; H10D89/601; H10D89/611; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/15
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
76 words
A semiconductor device comprising: a substrate and a thin film of semiconductor material on said substrate; contiguous regions of said film being of opposite conductivity type providing a plurality of serially connected diodes; and electrically conductive means individually electrically connected to different ones only of said regions, and being otherwise electrically isolated, for reducing the electrical resistance presented by said ones of said regions to the flow of current from diode to diode of said device.
Claim 2
Dependent Claim
76 words
A semiconductor device comprising: a substrate and a thin film of semiconductor material on said substrate; contiguous regions of said film being of opposite conductivity type providing a plurality of serially connected diodes; and electrically conductive means individually electrically connected to different ones only of said regions, and being otherwise electrically isolated, for reducing the electrical resistance presented by said ones of said regions to the flow of current from diode to diode of said device.
Claim 3
Dependent Claim
14 words
A device as in claim 1 wherein said means comprise a coating of metal.
Claim 4
Dependent Claim
31 words
A device as in claim 2 wherein said contiguous regions each extend through the entire thickness of said film, and said metal coatings are disposed on a surface of said film.
Claim 5
Dependent Claim
38 words
A device as in claim 3 wherein said coatings each comprise a combination of a layer of titanium disposed directly in contact with said semiconductor film and a layer of aluminum disposed on top of said titanium layer.
Claim 6
Dependent Claim
29 words
A device as in claim 3 including layers of insulating material on said surface overlying the boundaries between said regions, said metal coatings overlying said layers at said boundaries.
Claim 7
Dependent Claim
49 words
A device as in claim 1 including an insulated gate field effect transistor disposed on said substrate and comprising source, gate, and drain electrodes, and wherein said diodes are connected in back-to-back relation and are connected serially between said gate electrode and one of said source and drain electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-16 | 1976-10-16 | 1977-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-16 | 1980-10-16 | 1981-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-16 | 1984-10-16 | 1985-04-17 | $7700.00 | Window Closed / Lapsed |