US3849707A
Expired / Lapsed
US
⏱️ 0.0 years remaining
PLANAR GaN ELECTROLUMINESCENT DEVICE
Assignee: International Business Machines Corp
•
Filing: 1973-03-07
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Granted: 1974-11-19
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Expires: 1993-03-07
Abstract
Abstract A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.
Inventors
- 👤 N Braslau
- 👤 J Cuomo
- 👤 E Harris
- 👤 H Hovel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:07
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/80; Y; Y10; Y10S; Y10S148/00; Y10S148/059; Y10S148/113; Y10S257/00; Y10S257/926
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
30 words
AN ELECTROLUMINESCENT DEVICE COMPRISING: A SUBSTRATE OF P-TYPE SILICON; A LAYER OF HIGH RESISTIVITY SEMI-INSULATING MATERIAL ON SAID SUBSTRATE, SAID RESISTIVITTY BEING OF THE ORDR OF 10**7 OHMCM OR HIGHER,
Claim 2
Dependent Claim
30 words
AN ELECTROLUMINESCENT DEVICE COMPRISING: A SUBSTRATE OF P-TYPE SILICON; A LAYER OF HIGH RESISTIVITY SEMI-INSULATING MATERIAL ON SAID SUBSTRATE, SAID RESISTIVITTY BEING OF THE ORDR OF 10**7 OHMCM OR HIGHER,
Claim 3
Dependent Claim
12 words
The device of claim 1 wherein said high resistivity material is GaN.
Claim 4
Dependent Claim
14 words
The electroluminescent device of claim 2 wherein said GaN varies between 500-3,000A in thickness.
Claim 5
Dependent Claim
13 words
The device of claim 1 wherein said transparent electrical contact is indium oxide.
Claim 6
Dependent Claim
14 words
The device of claim 4 wherein said indium oxide ranges in thickness from 1,000-5,000A.
Claim 7
Dependent Claim
11 words
The device of claim 4 wherein said indium oxide is tin-doped.
Claim 8
Dependent Claim
68 words
An electroluminescent device comprising: a substrate of p-type silicon; a layer of high resistivity GaN of the order of 107 ohm-cm or higher on said substrate; a silicon dioxide layer on said GaN; a window in a selected portion of said silicon dioxide; a layer of indium oxide over said silicon dioxide including said window; and a high electrical potential connected between said substrate and said indium oxide.
Claim 9
Dependent Claim
68 words
An electroluminescent device comprising: a substrate of p-type silicon; a layer of high resistivity GaN of the order of 107 ohm-cm or higher on said substrate; a silicon dioxide layer on said GaN; a window in a selected portion of said silicon dioxide; a layer of indium oxide over said silicon dioxide including said window; and a high electrical potential connected between said substrate and said indium oxide.
Claim 10
Dependent Claim
14 words
The electroluminescent device of claim 7 wherein said silicon dioxide layer is 1,000-3,000A thick.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-11-18 | 1978-05-20 | 1978-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-11-18 | 1982-05-20 | 1982-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-11-18 | 1986-05-20 | 1986-11-19 | $7700.00 | Window Closed / Lapsed |