US3363155A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Opto-electronic transistor with a base-collector junction spaced from the material heterojunction
Assignee: US Philips Corp
•
Filing: 1965-08-13
•
Granted: 1968-01-09
•
Expires: 1985-08-13
Abstract
No abstract record available.
Inventors
- 👤 Newman Peter Colin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:39
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/20; H10F55/25; H10F55/255; H10F10/00; H10F10/10; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F30/24; H10F30/245; H10F55/18; H10F99/00; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/3446; H10P32/00; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/015; Y10S148/039; Y10S148/049; Y10S148/05; Y10S148/107
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
288 words
AN OPTO-ELECTRONIC DEVICE COMPRISING A SEMICONDUCTOR BODY HAVING EMITTER, BASE AND COLLECTOR REGIONS, SAID EMITTER AND BASE REGIONS AND SAID BASE AND COLLECTOR REGIONS FORMING RESPECTIVELY PHOTON-EMITTING AND PHOTONCOLLECTING, SPACED, P-N JUNCTIONS, SAID PHOTON-EMITTING JUNCTION BEING OPERABLE WHEN BIASED IN THE FORWARD DIRECTION TO EMIT PHOTONS WITH A QUANTUM EFFICIENCY GREATER THAN 0.1, MEANS FOR BIASING SAID PHOTON-EMITTING JUNCTION IN THE FORWARD DIRECTION TO CAUSE THE EMISSION OF PHOTONS TOWARD THE PHOTON-COLLECTING JUNCTION, AND MEANS FOR BIASING SAID PHOTON-COLLECTING JUNCTION IN THE REVERSE DIRECTION TO ESTABLISH IN A BODY PORTION ADJACENT THE PHOTON-COLLECTING JUNCTION A DEPLETION FIELD FOR COLLECTING CHARGE CARRIERS GENERATED UPON ABSORPTION WITHIN THE BODY OF THE EMITTED PHOTONS, THE SPACING BETWEEN THE PHOTONEMITTING AND PHOTON-COLLECTING JUNCTIONS BEING AT LEAST ONE DIFFUSION LENGTH AT OPERATING TEMPERATURES FOR CHARGE CARRIERS INJECTED BY THE PHOTON-EMITTING JUNCTION INTO THE SEMICONDUCTOR BODY REGIONS LYING INTERMEDIATE THE JUNCTIONS, SAID SEMICONDUCTOR BODY HAVING AT LEAST TWO CONTIGUOUS PORTIONS OF SEMICONDUCTOR MATERIAL OF DIFFERENT COMPOSITION POSSESSING DIFFERENT OPTICAL ENERGY GAPS AND INCLUDING A FIRST MATERIAL PORTION OF HIGH ENERGY GAP AND A SECOND MATERIAL PORTION OF ENERGY GAP LOWER THAN THAT OF SAID FIRST MATERIAL PORTION, THE EMITTER REGION LYING WHOLLY WITHIN THE FIRST PORTION OF HIGHER ENERGY GAP, THE COLLECTOR REGION LYING WHOLLY WITHIN THE SECOND PORTION OF LOWER ENERGY GAP, BASE REGION LYING PREDOMINANTLY IN THE FIRST PORTION BUT EXTENDING INTO THE SECOND PORTION SUCH THAT PHOTON-COLLECTING JUNCTION LIES WHOLLY WITHIN THE SECOND PORTION OF LOWER ENERGY GAP AND SPACED FROM THE BOUNDARY OF THE FIRST AND SECOND PORTIONS, WHEREBY THE DEPLETION FIELD EXTENDING FROM THE PHOTON-COLLECTING JUNCTION IS LOCATED PREDOMINANTLY IN THE SECOND PORTION LOWER ENERGY GAP EXHIBITION IMPROVED ABSORPTION FOR THE HIGHER ENERGY PHOTONS GENERATED BY THE PHOTONEMITTING JUNCTION.
Claim 2
Dependent Claim
288 words
AN OPTO-ELECTRONIC DEVICE COMPRISING A SEMICONDUCTOR BODY HAVING EMITTER, BASE AND COLLECTOR REGIONS, SAID EMITTER AND BASE REGIONS AND SAID BASE AND COLLECTOR REGIONS FORMING RESPECTIVELY PHOTON-EMITTING AND PHOTONCOLLECTING, SPACED, P-N JUNCTIONS, SAID PHOTON-EMITTING JUNCTION BEING OPERABLE WHEN BIASED IN THE FORWARD DIRECTION TO EMIT PHOTONS WITH A QUANTUM EFFICIENCY GREATER THAN 0.1, MEANS FOR BIASING SAID PHOTON-EMITTING JUNCTION IN THE FORWARD DIRECTION TO CAUSE THE EMISSION OF PHOTONS TOWARD THE PHOTON-COLLECTING JUNCTION, AND MEANS FOR BIASING SAID PHOTON-COLLECTING JUNCTION IN THE REVERSE DIRECTION TO ESTABLISH IN A BODY PORTION ADJACENT THE PHOTON-COLLECTING JUNCTION A DEPLETION FIELD FOR COLLECTING CHARGE CARRIERS GENERATED UPON ABSORPTION WITHIN THE BODY OF THE EMITTED PHOTONS, THE SPACING BETWEEN THE PHOTONEMITTING AND PHOTON-COLLECTING JUNCTIONS BEING AT LEAST ONE DIFFUSION LENGTH AT OPERATING TEMPERATURES FOR CHARGE CARRIERS INJECTED BY THE PHOTON-EMITTING JUNCTION INTO THE SEMICONDUCTOR BODY REGIONS LYING INTERMEDIATE THE JUNCTIONS, SAID SEMICONDUCTOR BODY HAVING AT LEAST TWO CONTIGUOUS PORTIONS OF SEMICONDUCTOR MATERIAL OF DIFFERENT COMPOSITION POSSESSING DIFFERENT OPTICAL ENERGY GAPS AND INCLUDING A FIRST MATERIAL PORTION OF HIGH ENERGY GAP AND A SECOND MATERIAL PORTION OF ENERGY GAP LOWER THAN THAT OF SAID FIRST MATERIAL PORTION, THE EMITTER REGION LYING WHOLLY WITHIN THE FIRST PORTION OF HIGHER ENERGY GAP, THE COLLECTOR REGION LYING WHOLLY WITHIN THE SECOND PORTION OF LOWER ENERGY GAP, BASE REGION LYING PREDOMINANTLY IN THE FIRST PORTION BUT EXTENDING INTO THE SECOND PORTION SUCH THAT PHOTON-COLLECTING JUNCTION LIES WHOLLY WITHIN THE SECOND PORTION OF LOWER ENERGY GAP AND SPACED FROM THE BOUNDARY OF THE FIRST AND SECOND PORTIONS, WHEREBY THE DEPLETION FIELD EXTENDING FROM THE PHOTON-COLLECTING JUNCTION IS LOCATED PREDOMINANTLY IN THE SECOND PORTION LOWER ENERGY GAP EXHIBITION IMPROVED ABSORPTION FOR THE HIGHER ENERGY PHOTONS GENERATED BY THE PHOTONEMITTING JUNCTION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-01-08 | 1971-07-10 | 1972-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-01-08 | 1975-07-10 | 1976-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-01-08 | 1979-07-10 | 1980-01-09 | $7700.00 | Window Closed / Lapsed |