Use of metallic halide as a carrier gas in the vapor deposition of iii-v compounds

Claim 1

THE PROCESS FOR DEPOSITION OF A GROUP III-GROUP V SEMICONDUCTOR COMPOUND OF ONE CONDUCTIVITY TYPE, THE GROUP V ELEMENT OF WHICH IS VOLATILE, ON A MONOCRYSTALLINE SUBSTRATE OF A GROUP III-GROUP V COMPOUND OF THE OPPOSITE CONDUCTIVITY TYPE THEREBY TO FORM A JUNCTION, THE METHOD COMPRISING PLACING A MASS OF GROUP III-GROUP V SEMICONDUCTOR MATERIAL IN ONE END OF AN OBLONG HERMETICALLY SEALED EVACUATED ENCLOSURE, PLACING SAID SUBSTRATE AT THE OTHER END OF SAID ENCLOSURE, INTRODUCING INTO SAID ENCLOSURE A QUANTITY OF METALLIC HALIDE TO PROVIDE BOTH A SOURCE OF TRANSPORT MEDIUM AND ONE TYPE CONDUCTIVITY INDUCING MATERIAL, THE METALLIC CONSTITUENT OF WHICH IS A METAL OTHER THAN ONE OF THE ELEMENTS OF THE SEMICONDUCTOR COMPOUNDS, HEATING SAID ONE END OF SAID ENCLOSURE TO A TEMPERATURE AND HEATING SAID OTHER END TO ANOTHER TEMPERATURE WHEREBY AT LEAST PORTION OF SAID QUANTITY OF SEMICONDUCTOR COMPOUND AND SAID METALLIC HALIDE AND CONDUCTIVITY TYPE INDUCING MATERIAL IS VOLATILIZED THEREBY TO CAUSE EPITAXIAL GROWTH OF SAID VOLATILIZED COMPOUND IMPREGNATED WITH SAID OPPOSITE CONDUCTIVITY INDUCING MATERIAL ON SAID SUBSTRATE, SAID TEMPERATURES BEING MAINTAINED FOR A SUFFICIENT TIME TO PRODUCE THE DESIRED DEPOSITION OF SAID ONE COMPOUND ON SAID SUBSTRATE.