US3145125A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions
Assignee: International Business Machines Corp
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Filing: 1961-07-10
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Granted: 1964-08-18
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Expires: 1981-07-10
Abstract
No abstract record available.
Inventors
- 👤 Vincent J Lyons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:42
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B25/00; C30B25/02; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3422; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/056; Y10S148/063; Y10S148/065; Y10S148/097; Y10S438/00; Y10S438/914; Y10S438/925; Y10S438/935; Y10S438/971
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
37 words
AN EPITAXIALLY GROWN III-V SEMICONDUCTOR CRYSTAL SELECTED FROM THE GROUP CONSISTING OF GAN, GAP, GAAS, GASB, INN, INP, INAS, AND INSB HAVING A SUFFICIENT GROUP III CONSTITUENT VACANCY CONCENTRATION TO IMPART "P" CONDUCTIVITY PYPE TO SAID CRYSTAL.
Claim 2
Dependent Claim
37 words
AN EPITAXIALLY GROWN III-V SEMICONDUCTOR CRYSTAL SELECTED FROM THE GROUP CONSISTING OF GAN, GAP, GAAS, GASB, INN, INP, INAS, AND INSB HAVING A SUFFICIENT GROUP III CONSTITUENT VACANCY CONCENTRATION TO IMPART "P" CONDUCTIVITY PYPE TO SAID CRYSTAL.
Claim 3
Independent Claim
77 words
A METHOD OF SYNTHESIZING III-V COMPOUND SEMICONDUCTOR CRYSTALS THROUGH EPITAXIAL VAPOR GROWTH INVOLVING A HALOGEN VAPOR TRANSPORT REACTION IN CONNECTION WITH A SUBSTRATE WHICHG COMPRISES THE STEP OF: INCREASING RELATIVE PARTIAL PRESSURE OF ONE OF REACTIVE CONSTITUENTS OF SAID HALOGEN VAPOR TRANSPORT REACTION IN THE IMMEDIATE VICINITY OF THE SURFACE OF SAID SUBSTRATE TO SELECTIVELY CONTROL VACANCY CONCENTRATIONS OF THE COMPOUND CONSTITENTS OF SAID SEMICONDUCTOR CRYSTALS SO AS TO IMPART A SPECIFIED CONDUCTIVITY TYPE TO SAID CRYSTALS.
Claim 4
Independent Claim
77 words
A METHOD OF SYNTHESIZING III-V COMPOUND SEMICONDUCTOR CRYSTALS THROUGH EPITAXIAL VAPOR GROWTH INVOLVING A HALOGEN VAPOR TRANSPORT REACTION IN CONNECTION WITH A SUBSTRATE WHICHG COMPRISES THE STEP OF: INCREASING RELATIVE PARTIAL PRESSURE OF ONE OF REACTIVE CONSTITUENTS OF SAID HALOGEN VAPOR TRANSPORT REACTION IN THE IMMEDIATE VICINITY OF THE SURFACE OF SAID SUBSTRATE TO SELECTIVELY CONTROL VACANCY CONCENTRATIONS OF THE COMPOUND CONSTITENTS OF SAID SEMICONDUCTOR CRYSTALS SO AS TO IMPART A SPECIFIED CONDUCTIVITY TYPE TO SAID CRYSTALS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-08-18 | 1968-02-17 | 1968-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-08-18 | 1972-02-17 | 1972-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-08-18 | 1976-02-17 | 1976-08-18 | $7700.00 | Window Closed / Lapsed |