Vapor phase epitaxial deposition process for forming superlattice structure

Abstract

Abstract A VAPOR PHASE EPITAXIAL PROCESS FOR FORMING A SUPERLATTICE STRUCTURE COMPRISING ALTERNATE LAYERS OF DIFFERENT SEMICONDUCTOR MATERIALS ON A SUBSTRATE. IN THE SUPERLATTICE, THE PROPORTION OF ONE COMPONENT IS CAUSED TO PERIODICALLY VARY FROM A DESIRED MAXIMUM TO A DESIRED MINIMUM OVER AN EXTREMELY SMALL PERIOD. FOR AN N COMPONENT SYSTEM, THIS IS ACCOMPLISHED BY FORMING A STREAM COMPRISING N-1 COOPONENTS AND INJECTING PULSES OF THE NTH COMPONENT IN A CARRIER GAS SEPARATED BY PULSES OF CARRIER GAS INTO THE N-1 COMPONENT STREAM, TO THEREBY PROVIDE AT THE SUBSTRATE ALTERNATE, DISCRETE BURSTS OF GAS COMPRISING N COMPONENTS AND N-1 COMPONENTS, RESPECTIVELY. BY CRITICALLY CONTROLLING DIFFUSION OF ADJACENT PULSES AND BURSTS, THE PROPORTION OF THE NTH COMPONENT IN THE SUPERLATTICE STRUCTURE CAN BE VARIED FROM A MAXIMUM TO A MINUMUM WITHIN AN EXTREMELY SMALL PERIOD. HIGH TEMPERATURE, VAPOR PHASE EPITAXIAL DEPOSITION APPARATUS FOR DEPOSITING SUCH A REPETITIVE SUPERLATTICE STRUCTURE: BASICALLY A PULSING CHAMBER TO RECEIVE THE N-1 COMPONENT STREAM; PULSING MEANS TO PERIODICALLY PULSE THE NTH COMPONENT INTO THE N-1 COMPONENT STREAM, WHEREBY THE BURSTS DESCRIBED ABOVE ARE FORMED; AND DEPOSITION MEANS CONTAINING A SUBSTRATE TO RECEIVE SAID BURSTS FOR THE FORMATION OF SAD SUPERLATTICE. ALL ELEMENTS ARE CORRELATED TO PERMIT DIFFUSION TO BE CRITICALLY CONTROLLED. D R A W I N G

Inventors

• 👤 A Blakeslee

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