Gallium arsenide on sapphire heterostructure

Abstract

Abstract Disclosed is a process for the production of a semiconductor element by introducing a gas of an organic metal compound of an element of the group III and a gas containing an element of the group V into a reaction chamber in which a substrate of a single crystal of alumina is arranged and epitaxially growing a III.V compound semiconductor by the thermal decomposition vapor deposition of the compound of the elements of the groups III.V, said process comprises, in combination, the steps of (A) heating the substrate at a temperature of 400 DEG to 550 DEG C., introducing the gas of the organic metal compound of the element of the group III and the gas containing the element of the group V into the reaction chamber and forming a film of a compound of the elements of the groups III.V on the surface of the substrate by the vapor deposition, (B) heating the substrate obtained at the step (A) at a temperature higher than 550 DEG C. but lower than 750 DEG C. and introducing the gas containing the element of the group V to anneal the film of the compound of the elements of the groups III.V, and (C) maintaining the substrate obtained at the step (B) at a temperature higher than 550 DEG C. but lower than 750 DEG C. and introducing the gas of the organic metal compound of the element of the group III and the gas containing the element of the group V to effect the vapor deposition of a compound semiconductor of the elements of the groups III.V with the film of the III.V compound film obtained at the step (B) being as the nucleus.

Inventors

• 👤 Takashi Hosoi
• 👤 Kokichi Ishibitsu

Bibliographic Details