US4447497A
Expired / Lapsed
US
⏱️ 0.0 years remaining
CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby
Assignee: Conexant Systems LLC
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Filing: 1982-05-03
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Granted: 1984-05-08
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Expires: 2002-05-03
Abstract
Abstract A method for producing monocrystalline semiconductor-on-insulator structures and article produced thereby, by the steps of heat treating a polished substrate of cubic zirconia to approximately 1150°-1400° C. for time to remove sufficient oxygen from the substrate in order to stabilize the surface; lowering the temperature to below 1075° C.; and depositing a thin monocrystalline layer of a semiconductor material on the stabilized surface, by a chemical vapor deposition process.
Inventors
- 👤 Harold M. Manasevit
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:04
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B25/20; C30B25/205
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
84 words
A method for producing monocrystalline semiconductor-on-insulator structures comprising: removing sufficient oxygen from the surface of a polished insulating substrate of cubic zirconia by subjecting at least said surface to a heat treatment of approximately 1150°-1400° C. for a time in order to stabilize the surface of the substrate so that a semiconductor layer can be deposited thereon; lowering the temperature of said substrate to below 1075° C.; and depositing a thin monocrystalline layer of a semiconductor material on the stabilized surface of the substrate.
Claim 2
Independent Claim
84 words
A method for producing monocrystalline semiconductor-on-insulator structures comprising: removing sufficient oxygen from the surface of a polished insulating substrate of cubic zirconia by subjecting at least said surface to a heat treatment of approximately 1150°-1400° C. for a time in order to stabilize the surface of the substrate so that a semiconductor layer can be deposited thereon; lowering the temperature of said substrate to below 1075° C.; and depositing a thin monocrystalline layer of a semiconductor material on the stabilized surface of the substrate.
Claim 3
Dependent Claim
19 words
A method as defined in claim 1 wherein said step of removing oxygen takes place in a reducing atmosphere.
Claim 4
Dependent Claim
13 words
A method as defined in claim 2, wherein said reducing atmosphere comprises hydrogen.
Claim 5
Dependent Claim
19 words
A method as defined in claim 1 wherein said step of removing oxygen takes place at approximately 1250° C.
Claim 6
Dependent Claim
18 words
A method as defined in claim 1, wherein said step of removing oxygen takes place in a vacuum.
Claim 7
Dependent Claim
18 words
A method as defined in claim 1, wherein said step of depositing a semiconductor material comprises depositing silicon.
Claim 8
Dependent Claim
23 words
A method as defined in claim 6, wherein said step of lowering the temperature is to the approximate range of 950° C.-1075° C.
Claim 9
Dependent Claim
18 words
A method as defined in claim 1, wherein said depositing step consists of a chemical vapor deposition process.
Claim 10
Dependent Claim
18 words
A method as defined in claim 1, wherein said depositing step comprises depositing silicon from a silane-containing atmosphere.
Claim 11
Dependent Claim
17 words
An article of manufacture prepared by a product by process comprising the steps defined in claim 1.
Claim 12
Independent Claim
78 words
A method for producing monocrystalline semiconductor-on-insulator structures comprising: heat treating a polished insulating substrate of yttria stabilized cubic zirconia consisting essentially of 7 to 40 mole percent yttria to approximately 1150°-1400° C. for a time to remove sufficient oxygen from the substrate in order to stabilize the surface of the substrate; lowering the temperature of said substrate to below 1075° C.; and depositing a thin monocrystalline layer of a semiconductor material on the stabilized surface of the substrate.
Claim 13
Independent Claim
78 words
A method for producing monocrystalline semiconductor-on-insulator structures comprising: heat treating a polished insulating substrate of yttria stabilized cubic zirconia consisting essentially of 7 to 40 mole percent yttria to approximately 1150°-1400° C. for a time to remove sufficient oxygen from the substrate in order to stabilize the surface of the substrate; lowering the temperature of said substrate to below 1075° C.; and depositing a thin monocrystalline layer of a semiconductor material on the stabilized surface of the substrate.
Claim 14
Dependent Claim
18 words
A method as defined in claim 11 wherein said heat treating step takes place in a reducing atmosphere.
Claim 15
Dependent Claim
13 words
A method as defined in claim 12, wherein said reducing atmosphere contains hydrogen.
Claim 16
Dependent Claim
18 words
A method as defined in claim 11, wherein said heat treating step takes place at approximately 1250° C.
Claim 17
Dependent Claim
17 words
A method as defined in claim 11, wherein said heat treating step takes place in a vacuum.
Claim 18
Dependent Claim
18 words
A method as defined in claim 11, wherein said step of depositing a semiconductor material comprises depositing silicon.
Claim 19
Dependent Claim
22 words
A method as defined in claim 16, wherein said step of lowering the temperature is to the approximate range of 950°-1075° C.
Claim 20
Dependent Claim
18 words
A method as defined in claim 11, wherein said depositing step consists of a chemical vapor deposition process.
Claim 21
Dependent Claim
18 words
A method as defined in claim 11, wherein said depositing step comprises depositing silicon from a silane-containing atmosphere.
Claim 22
Dependent Claim
15 words
An article of manufacture prepared by a process comprising the steps defined in claim 11.
Claim 23
Dependent Claim
25 words
A method as defined in claim 11, wherein said polished substrate has a (110) crystallographic orientation and the temperature is lowered to approximately 975°-1025° C.
Claim 24
Dependent Claim
32 words
A method as defined in claim 11, wherein said substrate has a (100) crystallographic orientation and the step of lowering the temperature to below 1075° C. is performed to approximately 950°-1025° C.
Claim 25
Dependent Claim
24 words
A method as defined in claim 11, wherein said substrate has a (111) crystallographic orientation and said temperature is lowered to approximately 1050°-1075° C.
Claim 26
Dependent Claim
20 words
A method as defined in claim 11 wherein said step of depositing a semiconductor material comprises depositing a compound semiconductor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-08 | 1987-11-07 | 1988-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-08 | 1991-11-07 | 1992-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-08 | 1995-11-07 | 1996-05-08 | $7700.00 | Window Closed / Lapsed |