US3796597A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconducting monocrystalline silicon on spinel substrates
Assignee: Texas Instruments Inc
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Filing: 1970-11-02
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Granted: 1974-03-12
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Expires: 1990-11-02
Abstract
Abstract THERE IS DISCLOSED AN IMPROVED METHOD OF PRODUCING MONOCRYSTALLINE SEMICONDUCTOR MATERIAL ON A SUBSTRATE OF DIELECTRIC MATERIAL. THE METHOD COMPRISES HEAT TREATING OF THE SUBSTRATE, SPECIFICALLY MGO.AL2O3 SPINEL TO MODIFY THE COMPOSITION OF ITS SURFACE AND THEN GROWING A MONOCRYSTALLINE SEMICONDUCTOR MATERIAL, SILICON, THEREON. RESULTANT SEMICONDUCTOR DEVICES HAVE DEMONSTRATED IMPROVED SWITCHING SPEED.
Inventors
- 👤 V Porter
- 👤 L Dyer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:48
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/053; Y10S148/097; Y10S148/15; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-11 | 1977-09-10 | 1978-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-11 | 1981-09-10 | 1982-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-11 | 1985-09-10 | 1986-03-12 | $7700.00 | Window Closed / Lapsed |