US4404265A
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Epitaxial composite and method of making
Assignee: Conexant Systems LLC
•
Filing: 1978-04-07
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Granted: 1983-09-13
•
Expires: 1998-04-07
Abstract
Abstract An epitaxial composite comprising a thin film of single crystal Group III-V wide band-gap compound semiconductor or semiconductor alloy on single crystal, electrically insulating oxide substrates such as sapphire, spinel, BeO, ThO2, or the like, and on III-V semiconductors or alloys. The thin film may be produced in situ on a heated substrate by reaction of an organic compound containing the Group III constituent, typically tfhe alkyl metal organic, such as trimethylgallium and/or triethylgallium with a Group V hydride such as arsine, phosphine and/or stibine.
Inventors
- 👤 Harold M. Manasevit
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:47
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3422; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3466
Claims Analysis
Total Claims: 96
Claim 1
Independent Claim
53 words
A composite comprising a monocrystalline, electrically insulating, oxide substrate and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate in which the Group III constituent of the semiconductor comprises at least one element selected from the class consisting of gallium and indium.
Claim 2
Dependent Claim
53 words
A composite comprising a monocrystalline, electrically insulating, oxide substrate and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate in which the Group III constituent of the semiconductor comprises at least one element selected from the class consisting of gallium and indium.
Claim 3
Dependent Claim
54 words
A composite comprising a monocrystalline, electrically insulating, oxide substrate and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, in which the Group V constituent of the semiconductor comprises at least one element selected from the class consisting of phosphorus, arsenic, and antimony.
Claim 4
Dependent Claim
54 words
A composite comprising a monocrystalline, electrically insulating, oxide substrate and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, in which the Group V constituent of the semiconductor comprises at least one element selected from the class consisting of phosphorus, arsenic, and antimony.
Claim 5
Dependent Claim
31 words
A composite comprising a monocrystalline, electrically insulating, oxide subtrate and a single crystalline film consisting of a cubic Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
Claim 6
Dependent Claim
31 words
A composite comprising a monocrystalline, electrically insulating, oxide subtrate and a single crystalline film consisting of a cubic Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
Claim 7
Dependent Claim
14 words
The composite as recited in claim 1 wherein said semiconductor comprises a solid solution.
Claim 8
Dependent Claim
31 words
The composite according to claims 1, 2 or 3 in which said monocrystalline insulating oxide substrate is selected from the class of crystal structures consisting of rhombohedral, orthorhombic, hexagonal and cubic.
Claim 9
Dependent Claim
32 words
The composite according to claims 1, 2 or 3 in which said insulating substrate is selected from the class consisting of sapphire, spinel, chrysoberyl, gadolinium gallium garnet, beryllium oxide, and thorium oxide.
Claim 10
Dependent Claim
42 words
The composite according to claims 1, 2 or 3 in which the Group III constituent is selected from the class consisting of gallium, aluminum, and indium; and the Group V constituent is selected from the class consisting of arsenic, phosphorus, and antimony.
Claim 11
Dependent Claim
39 words
The composite according to claim 6 in which the Group III constituent is selected from the class consisting of gallium, aluminum, and indium; and the Group V constitutent is selected from the class consisting of arsenic, phosphorus, and antimony.
Claim 12
Dependent Claim
30 words
The composite according to claim 6 in which the semiconductor compound contains more than one of the Group III elements selected from the class consisting of gallium, aluminum, and indium.
Claim 13
Dependent Claim
30 words
The composite according to claim 6 in which the semiconductor compound contains more than one of the Group V elements selected from the class consisting of arsenic, phosphorus and antimony.
Claim 14
Dependent Claim
52 words
The composite according to claim 6 in which the semiconductor compound consists of a solid solution of more than one of the elements selected from Group III elements consisting of gallium, aluminum and indium and more than one of the elements selected from Group V elements consisting of arsenic, phosphorus and antimony.
Claim 15
Dependent Claim
46 words
The composite according to claims 1, 2 or 3 in which said semiconductor compound is selected from the class consisting of gallium arsenide, gallium phosphide and gallium arsenide-phosphide, aluminum arsenide, gallium-aluminum arsenide, gallium arsenide-antimonide, gallium phosphide-antimonide, aluminum phosphide-antimonide, indium arsenide, indium phosphide and alloy combinations thereof.
Claim 16
Dependent Claim
14 words
The composite according to claim 12 in which said Group III-V semiconductor is impurity-doped.
Claim 17
Dependent Claim
15 words
The composite according to claim 13 in which said Group III-V semiconductor is donor impurity-doped.
Claim 18
Dependent Claim
16 words
The composite according to claim 13 in which said Group III-V semiconductor compound is acceptor impurity-doped.
Claim 19
Dependent Claim
59 words
A composite according to claims 1, 2 or 3 in which the insulating substrate is sapphire (αAl 2 O 3 ), and the orientation of the surface exposed is selected from the class of orientations consisting of (0001),(1125), (1126) and their crystallographic equivalents; and the orientation of the crystalline lattice of said single crystal film is the (111) plane.
Claim 20
Dependent Claim
42 words
A composite according to claims 1, 2 or 3 in which the insulating substrate is spinel (MgAl 2 O 4 ) having the (110) surface exposed, and the orientation of the crystalline lattice of said single crystal film is the (100) plane.
Claim 21
Dependent Claim
46 words
A composite according the claims 1, 2 or 3 in which the insulating substrate is gadolinium gallium garnet (Gd 3 Ga 5 O 12 ) having the (211) surface exposed, and the orientation of the crystalline lattice of said single crystal film is the (111) plane.
Claim 22
Dependent Claim
44 words
A composite comprising: an electrically insulating substrate having a cubic monocrystalline structure selected from the group consisting of thorium oxide and barium fluoride; and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
Claim 23
Dependent Claim
44 words
A composite comprising: an electrically insulating substrate having a cubic monocrystalline structure selected from the group consisting of thorium oxide and barium fluoride; and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
Claim 24
Dependent Claim
23 words
The composite according to claim 19 in which the Group III elements are selected from the group consisting of gallium, aluminum, and indium.
Claim 25
Dependent Claim
23 words
The composite according to claim 19 in which the Group V elements are selected from the group consisting of arsenic, phosphorus and antimony.
Claim 26
Dependent Claim
40 words
The composite according to claim 19 in which said semiconductor compound is selected from the class consisting of gallium arsenide, gallium phosphide, gallium arsenide-phosphide, aluminum arsenide, gallium arsenide-antimonide, gallium phosphide-antimonide, aluminum phosphide-antimonide, indium arsenide, indium phosphide and alloy combinations thereof.
Claim 27
Dependent Claim
15 words
The composite according to claim 22 in which said Group III-V semiconductor is impurity doped.
Claim 28
Dependent Claim
20 words
A composite as recited in claim 19 wherein said semiconductor film is deposited on said substrate by a metal-organic process.
Claim 29
Dependent Claim
64 words
A composite comprising: an electrically insulating substrate having a cubic monocrystalline structure selected from the group consisting of thorium oxide, calcium fluoride and barium fluoride; and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, and wherein the Group III constituent of the semiconductor contains more than one of the Group III elements.
Claim 30
Dependent Claim
64 words
A composite comprising: an electrically insulating substrate having a cubic monocrystalline structure selected from the group consisting of thorium oxide, calcium fluoride and barium fluoride; and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, and wherein the Group III constituent of the semiconductor contains more than one of the Group III elements.
Claim 31
Dependent Claim
64 words
A composite comprising: an electrically insulating substrate having a cubic monocrystalline structure selected from the group consisting of thorium oxide, calcium fluoride and barium fluoride; and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, and wherein the Group V constituent of the semiconductor contains more than one of the Group V elements.
Claim 32
Dependent Claim
64 words
A composite comprising: an electrically insulating substrate having a cubic monocrystalline structure selected from the group consisting of thorium oxide, calcium fluoride and barium fluoride; and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, and wherein the Group V constituent of the semiconductor contains more than one of the Group V elements.
Claim 33
Dependent Claim
31 words
A composite comprising: an electrically insulating gadolinium gallium garnet substrate having a cubic monocrystalline structure; and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on said substrate.
Claim 34
Dependent Claim
31 words
A composite comprising: an electrically insulating gadolinium gallium garnet substrate having a cubic monocrystalline structure; and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on said substrate.
Claim 35
Dependent Claim
24 words
The composite according to claim 27 in which the Group III constituent of the semiconductor contains more than one of the Group III elements.
Claim 36
Dependent Claim
24 words
The composite according to claim 27 in which the Group V constituent of the semiconductor contains more than one of the Group V elements.
Claim 37
Dependent Claim
23 words
The composite according to claim 27 in which the Group III elements are selected from the group consisting of gallium, aluminum, and indium.
Claim 38
Dependent Claim
23 words
The composite according to claim 27 in which the Group V elements are selected from the group consisting of arsenic, phosphorus and antimony.
Claim 39
Dependent Claim
20 words
A composite as recited in claim 27 wherein said semiconductor film is deposited on said substrate by a metal-organic process.
Claim 40
Dependent Claim
40 words
The composite according to claim 27 in which said semiconductor compound is selected from the class consisting of gallium arsenide, gallium phosphide, gallium arsenide-phosphide, aluminum arsenide, gallium arsenide-antimonide, gallium phosphide-antimonide, aluminum phosphide-antimonide, indium arsenide, indium phosphide and alloy combinations thereof.
Claim 41
Dependent Claim
15 words
The composite according to claim 35 in which the Group III-V semiconductor is impurity doped.
Claim 42
Dependent Claim
87 words
A composite consisting of: an electrically insulating monocrystalline substrate selected from the class of crystal structures consisting of rhombohedral, orthorhombic, and hexagonal; and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate the constituents of the Group III-V semiconductor being selected from the class consisting of a least one of the Group III elements gallium, aluminum, and indium, and the class consisting of at least one of the Group V elements arsenic, phosphorus and antimony, respectively.
Claim 43
Dependent Claim
87 words
A composite consisting of: an electrically insulating monocrystalline substrate selected from the class of crystal structures consisting of rhombohedral, orthorhombic, and hexagonal; and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate the constituents of the Group III-V semiconductor being selected from the class consisting of a least one of the Group III elements gallium, aluminum, and indium, and the class consisting of at least one of the Group V elements arsenic, phosphorus and antimony, respectively.
Claim 44
Dependent Claim
15 words
A composite according to claim 35, wherein said electrically insulating monocrystalline substrate comprises an oxide.
Claim 45
Dependent Claim
34 words
A composite according to claim 35, wherein the constituents of said Group III-V semiconductor are selected from the Group III elements gallium, aluminum and indium, and the Group V elements arsenic, phosphorus and antimony.
Claim 46
Dependent Claim
20 words
A composite as recited in claim 35 wherein said semiconductor film is deposited on said substrate by a metal-organic process.
Claim 47
Dependent Claim
21 words
A composite according to claim 35 wherein the substrate is selected from the group consisting of sapphire, chrysoberyl and beryllium oxide.
Claim 48
Dependent Claim
24 words
The composite according to claim 39 in which the Group III constituent of the semiconductor contains more than one of the Group III elements.
Claim 49
Dependent Claim
24 words
The composite according to claim 39 in which the Group V constituent of the semiconductor contains more than one of the Group V elements.
Claim 50
Dependent Claim
40 words
The composite according to claim 39 in which said semiconductor compound is selected from the class consisting of gallium arsenide, gallium phosphide, gallium arsenide-phosphide, aluminum arsenide, gallium arsenide-antimonide, gallium phosphide-antimonide, aluminum phosphide-antimonide, indium arsenide, indium phosphide and alloy combinations thereof.
Claim 51
Dependent Claim
15 words
The composite according to claim 42 in which said Group III-V semiconductor is impurity doped.
Claim 52
Dependent Claim
67 words
A composite consisting of a monocrystalline sapphire substrate, said substrate having an exposed surface with an orientation selected from the class of orientations consisting of (1125) , (1126), (0001), (1123), (0112) and their crystallographic equivalents, and a single crystalline film consisting of cubic Group III-V semiconductor expitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said single crystalline film is the (111) plane.
Claim 53
Dependent Claim
67 words
A composite consisting of a monocrystalline sapphire substrate, said substrate having an exposed surface with an orientation selected from the class of orientations consisting of (1125) , (1126), (0001), (1123), (0112) and their crystallographic equivalents, and a single crystalline film consisting of cubic Group III-V semiconductor expitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said single crystalline film is the (111) plane.
Claim 54
Dependent Claim
54 words
A composite comprising a monocrystalline spinel (MgAl 2 O 4 ) substrate having the (110) surface exposed, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate wherein the orientation of the crystalline lattice of said single crystal film is the (100) plane.
Claim 55
Dependent Claim
54 words
A composite comprising a monocrystalline spinel (MgAl 2 O 4 ) substrate having the (110) surface exposed, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate wherein the orientation of the crystalline lattice of said single crystal film is the (100) plane.
Claim 56
Dependent Claim
46 words
A composite comprising a monocrystalline gadolinium gallium garnet substrate having the (211) surface exposed, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said single crystal film is the (111) plane.
Claim 57
Dependent Claim
46 words
A composite comprising a monocrystalline gadolinium gallium garnet substrate having the (211) surface exposed, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said single crystal film is the (111) plane.
Claim 58
Dependent Claim
60 words
A composite consisting of a monocrystalline beryllium oxide substrate, said substrate having an exposed surface with an orientation selected from the group of orientations consisting of (1011) and (0001) and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said crystal film is the (111) plane.
Claim 59
Dependent Claim
60 words
A composite consisting of a monocrystalline beryllium oxide substrate, said substrate having an exposed surface with an orientation selected from the group of orientations consisting of (1011) and (0001) and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said crystal film is the (111) plane.
Claim 60
Dependent Claim
47 words
A composite consisting of a monocrystalline beryllium oxide substrate, said substrate having its (1010) surface exposed and a single crystal film consiting of a Group III-V semiconductor epitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said crystal film is the (100) plane.
Claim 61
Dependent Claim
47 words
A composite consisting of a monocrystalline beryllium oxide substrate, said substrate having its (1010) surface exposed and a single crystal film consiting of a Group III-V semiconductor epitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said crystal film is the (100) plane.
Claim 62
Dependent Claim
25 words
A composite as recited in claims 44, 45, 46, 47 or 48 wherein said semiconductor film is deposited on said substrate by a metal-organic process.
Claim 63
Dependent Claim
76 words
A composite consisting of: an electrically insulating monocrystalline oxide substrate; and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said oxide substrate, the constituents of the Group III-V semiconductor being selected from the class consisting of at least one of the Group III elements gallium, aluminum, and indium, and the class consisting of at least one of the Group V elements arsenic, phosphorus and antimony, respectively.
Claim 64
Dependent Claim
76 words
A composite consisting of: an electrically insulating monocrystalline oxide substrate; and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said oxide substrate, the constituents of the Group III-V semiconductor being selected from the class consisting of at least one of the Group III elements gallium, aluminum, and indium, and the class consisting of at least one of the Group V elements arsenic, phosphorus and antimony, respectively.
Claim 65
Dependent Claim
21 words
A composite according to claim 50 wherein the substrate is selected from the group consisting of sapphire, chrysoberyl and beryllium oxide.
Claim 66
Dependent Claim
20 words
A composite as recited in claim 50 wherein said semiconductor film is deposited on said substrate by a metal-organic process.
Claim 67
Dependent Claim
46 words
A composite according to claim 51 in which said semiconductor compound is selected from the class consisting of gallium arsenide, gallium phosphide, gallium arsenide-phosphide, aluminum arsenide, gallium arsenide-antimonide, gallium phosphide-antimonide, aluminum phosphide-antimonide, indium arsenide, indium phosphide, gallium aluminum-arsenide, gallium indium-arsenide, gallium indium-antimonide, and alloy combinations thereof.
Claim 68
Dependent Claim
15 words
A composite according to claim 53 in which said Group III-V semiconductor is impurity doped.
Claim 69
Dependent Claim
66 words
A composite comprising: an electrically insulating monocrystalline oxide substrate; and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said oxide substrate, and wherein the substrate is selected from the group consisting of sapphhire, chrysoberyl and beryllium oxide, and in which the Group III constituent of the semiconductor contains more than one of the Group III elements.
Claim 70
Dependent Claim
66 words
A composite comprising: an electrically insulating monocrystalline oxide substrate; and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said oxide substrate, and wherein the substrate is selected from the group consisting of sapphhire, chrysoberyl and beryllium oxide, and in which the Group III constituent of the semiconductor contains more than one of the Group III elements.
Claim 71
Dependent Claim
66 words
A composite comprising: an electrically insulating monocrystalline oxide substrate; and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said oxide substrate, and wherein the substrate is selected from the group consisting of sapphire, chrysoberyl and beryllium oxide, and in which the Group V constituent of the semiconductor contains more than one of the Group V elements.
Claim 72
Dependent Claim
66 words
A composite comprising: an electrically insulating monocrystalline oxide substrate; and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said oxide substrate, and wherein the substrate is selected from the group consisting of sapphire, chrysoberyl and beryllium oxide, and in which the Group V constituent of the semiconductor contains more than one of the Group V elements.
Claim 73
Dependent Claim
32 words
A composite comprising a monocrystalline thorium oxide (ThO 2 ) substrate, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
Claim 74
Dependent Claim
32 words
A composite comprising a monocrystalline thorium oxide (ThO 2 ) substrate, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
Claim 75
Dependent Claim
18 words
A composite as recited in claim 57 wherein said monocrystalline thorium oxide substrate has the (100) surface exposed.
Claim 76
Dependent Claim
14 words
A composite as recited in claim 57 wherein said semiconductor comprises a solid solution.
Claim 77
Dependent Claim
20 words
A composite as recited in claim 57 wherein said semiconductor film is deposited on said substrate by a metal-organic process.
Claim 78
Dependent Claim
33 words
A composite comprising a monocrystalline chrysoberyl (Al 2 BeO 4 ) substrate, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
Claim 79
Dependent Claim
33 words
A composite comprising a monocrystalline chrysoberyl (Al 2 BeO 4 ) substrate, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
Claim 80
Dependent Claim
14 words
A composite as recited in claim 61 wherein said semiconductor comprises a solid solution.
Claim 81
Dependent Claim
20 words
A composite as recited in claim 61 wherein said semiconductor film is deposited on said substrate by a metal-organic process.
Claim 82
Dependent Claim
28 words
A composite as recited in claims 57, 58 or 61 wherein said semiconductor comprises a compound of one Group III semiconductor material and one Group V semiconductor material.
Claim 83
Dependent Claim
67 words
The composite according to claims 1, 19, 35, 45 or 50 made by the process of: heating said substrate, and introducing into said open reactor a first material containing a hydride or halide-free alkyl of at least one Group V constituent of said semiconductor, and, as a second material, at least one halide-free alkyl compound containing at least one of the Group III constituents of said semiconductor.
Claim 84
Dependent Claim
71 words
The composite according to claims 1, 19, 35, 45 or 50 employing an electrically insulating substrate made by the process of: heating said substrate and introducing into said open reactor a first material containing a hydride or alkyl of at least one Group V constituent of said semiconductor, and, as a second material, at least one organic alkyl compound containing at least one of the Group III constituents of said semiconductor.
Claim 85
Dependent Claim
87 words
A composite comprising a monocrystalline, electrically insulating substrate and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, and wherein said semiconductor film is deposited on said substrate by a metal-organic process, the constituents of the Group III-V semiconductor being selected from the class consisting of at least one of the Group III elements gallium, aluminum, and indium, and the class consisting of at least one of the Group V elements arsenic, phosphorus and antimony, respectively.
Claim 86
Dependent Claim
87 words
A composite comprising a monocrystalline, electrically insulating substrate and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, and wherein said semiconductor film is deposited on said substrate by a metal-organic process, the constituents of the Group III-V semiconductor being selected from the class consisting of at least one of the Group III elements gallium, aluminum, and indium, and the class consisting of at least one of the Group V elements arsenic, phosphorus and antimony, respectively.
Claim 87
Dependent Claim
30 words
The composite according to claims 4, 59, 62 or 67 in which the Group III constituent of the semiconductor solid solution contains more than one of the Group III elements.
Claim 88
Dependent Claim
30 words
The composite according to claims 4, 59, 62 or 67 in which the Group V constituent of the semiconductor solid solution contains more than one of the Group V elements.
Claim 89
Dependent Claim
34 words
The composite according to claims 4, 59, 62 or 67 in which the Group III and Group V constituents of the semiconductor are solid solutions of Group III elements and Group V elements, respectively.
Claim 90
Dependent Claim
23 words
The composite according to claim 68 in which the Group III elements are selected from the class consisting of gallium, aluminum, and indium.
Claim 91
Dependent Claim
23 words
The composite according to claim 69 in which the Group V elements are selected from the class consisting of arsenic, phosphorus and antimony.
Claim 92
Dependent Claim
39 words
The composite according to claim 70 in which said Group III constituents are selected from the class consisting of gallium, aluminum and indium and said Group V constituents are selected from the class consisting of arsenic, phosphorus and antimony.
Claim 93
Dependent Claim
44 words
A composite comprising a monocrystalline, electrically insulating substrate and a single crystal film consisting of a Group III-V semiconductor solid solution epitaxially disposed on and in direct contact with said substrate, said Group III constituents containing more than one of the Group III elements.
Claim 94
Dependent Claim
44 words
A composite comprising a monocrystalline, electrically insulating substrate and a single crystal film consisting of a Group III-V semiconductor solid solution epitaxially disposed on and in direct contact with said substrate, said Group III constituents containing more than one of the Group III elements.
Claim 95
Dependent Claim
44 words
A composite comprising a monocrystalline, electrically insulating substrate and a single crystal film consisting of a Group III-V semiconductor solid solution epitaxially disposed on and in direct contact with said substrate, said Group V constituent containing more than one of the Group V elements.
Claim 96
Dependent Claim
44 words
A composite comprising a monocrystalline, electrically insulating substrate and a single crystal film consisting of a Group III-V semiconductor solid solution epitaxially disposed on and in direct contact with said substrate, said Group V constituent containing more than one of the Group V elements.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1986-09-12 | 1987-03-14 | 1987-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-12 | 1991-03-14 | 1991-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-12 | 1995-03-14 | 1995-09-13 | $7700.00 | Window Closed / Lapsed |