Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds

Claim 1

PROCESS FOR THE PRODUCTION AND DEPOSITION OF EPITAXIAL FILMS COMPRISED OF COMPOUNDS SELECTED FROM THE GROUP CONSISTING OF THE NITRIDES, PHOSPHIDES, ARSENIDES AND ANTIMONIDES OF BORON, ALUMINUM, GALLIUM, INDIUM AND MIXTURES THEREOF, ONTO A SUBSTRATE MATERIAL THE CRYSTAL LATTICE SPACING OF WHICH IS WITHIN ABOUT 40% OF THAT OF SAID COMPOUNDS AND BEING SELECTED FROM THE CLASS CONSISTING OF I-VII, II-VI AND III-V COMPOUNDS, GERMANIUM AND SILICON, WHICH COMPRISES COMBINING THE VAPOR PHASE (1) A GASEOUS MIXTURE FORMED BY THE REACTION OF HYDROGEN HALIDE AND A GROUP III ELEMENT AND (2) A GASEOUS MIXTURE OF HYDROGEN AND A SUBSTANCE SELECTED FROM THE GROUP CONSISTINT OF A GROUP V ELEMENT AND A VOLATILE GROUP V COMPOUND WHILE EXCLUDING OXIDIZING GASES, AND CONTACTING THE RESULTING REACTION MIXTURE WITH SAID SUBSTRATE AT A TEMPERATURE WITHIN THE RANGE OF FROM 135*C. TO 1500*C. TO DEPOSIT A SINGLE CRYSTAL FORM OF AT LEAST ONE III-V COMPOUND AS AN EPITAXIAL FILM ON SAID SUBSTRATE.