US3146137A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Smooth epitaxial compound films having a uniform thickness by vapor depositing on the (100) crystallographic plane of the substrate
Assignee: Monsanto Co
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Filing: 1962-07-13
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Granted: 1964-08-25
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Expires: 1982-07-13
Abstract
No abstract record available.
Inventors
- 👤 Forrest V Williams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:34
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/3466; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/057; Y10S148/065; Y10S148/067; Y10S148/072; Y10S148/115
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
130 words
PROCESS FOR THE PRODUCTION OF IMPROVED EPITAXIAL FILMS OF COMPOUNDS SELECTED FROM THE GROUP CONSISTING OF THE PHOSPHIDES AND ARSENIDES OF ALUMINUM, GALLIUM AND INDIUM AND MIXTURES THEREOF, WHICH COMPRISES CONTACTING A CRUDE SOURCE OF AT LEAST ONE OF SAID COMPOUNDS WITH A VAPOR COMPRISING HYDROGEN HALIDE AND ELEMENTAL HYDROGEN AT A FIRST TEMPERATURE WITHIN THE RANGE OF FROM 135*C. TO 1200*C. TO REACT SAID COMPOUND(S) WITH SAID HYDROGEN HALIDE, AND CONTACTING THE RESULTING GASEOUS MIXTURE WITH THE (100) CRYSTALLOGRAPHIC FACE OF A SEED CRYSTAL OF AT LEAST ONE OF SAID COMPOUNDS AT A SECOND TEMPERATURE WITH THE RANGE OF FROM 130*C. TO 1500*C. TO DEPOSIT AT LEAST ONE LAYER OF AS SINGLE CRYSTAL FORM OF AT LEAST ONE OF SAID COMPOUND(S) AS AN PITAXIAL FILM ONTO SAID SEED CRYSTAL.
Claim 2
Dependent Claim
130 words
PROCESS FOR THE PRODUCTION OF IMPROVED EPITAXIAL FILMS OF COMPOUNDS SELECTED FROM THE GROUP CONSISTING OF THE PHOSPHIDES AND ARSENIDES OF ALUMINUM, GALLIUM AND INDIUM AND MIXTURES THEREOF, WHICH COMPRISES CONTACTING A CRUDE SOURCE OF AT LEAST ONE OF SAID COMPOUNDS WITH A VAPOR COMPRISING HYDROGEN HALIDE AND ELEMENTAL HYDROGEN AT A FIRST TEMPERATURE WITHIN THE RANGE OF FROM 135*C. TO 1200*C. TO REACT SAID COMPOUND(S) WITH SAID HYDROGEN HALIDE, AND CONTACTING THE RESULTING GASEOUS MIXTURE WITH THE (100) CRYSTALLOGRAPHIC FACE OF A SEED CRYSTAL OF AT LEAST ONE OF SAID COMPOUNDS AT A SECOND TEMPERATURE WITH THE RANGE OF FROM 130*C. TO 1500*C. TO DEPOSIT AT LEAST ONE LAYER OF AS SINGLE CRYSTAL FORM OF AT LEAST ONE OF SAID COMPOUND(S) AS AN PITAXIAL FILM ONTO SAID SEED CRYSTAL.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-08-25 | 1968-02-24 | 1968-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-08-25 | 1972-02-24 | 1972-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-08-25 | 1976-02-24 | 1976-08-25 | $7700.00 | Window Closed / Lapsed |