US4066481A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
Assignee: Boeing North American Inc
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Filing: 1976-01-07
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Granted: 1978-01-03
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Expires: 1996-01-07
Abstract
Abstract A composite comprising a monocrystalline substrate and one or more layers or films of monocrystalline IVA-VIA compounds and/or alloys formed thereon by a chemical vapor deposition process. The composite is formed at a preferred temperature range of approximately 450°-650° C. The IVA-VIA layer(s) are produced by the pyrolysis of a gas mixture containing metalorganic compounds. Where single crystal metallic oxide substrates of rhombohedral structure, such as sapphire, (α-Al 2 O 3 ), or of cubic structure, such as magnesium aluminate (spinel), are used for the growth of monocrystalline lead-containing films such as Pb 1-x Sn x Te, a nucleation layer of lead is preferably formed on the substrate prior to the pyrolysis of the mixed gaseous reactants. Using the present process, epitaxial monocrystalline IVA-VIA compounds and/or alloys can be grown on inorganic metal oxide substrates, such as cubic and rhombohedral oxides, on alkali halides and IIA fluorides, and on II-VI and III-V compounds. The compositions of the films can be varied without removing the composites from the deposition apparatus by changing the ratio of the reactant gases and the reaction temperature. The conductivity type (n-type or p-type) of the films also can be controlled without removing the composites from the deposition apparatus by varying the reactant gas compositions and by incorporating a dopant into the reactant mixtures prior to pyrolysis.
Inventors
- 👤 Harold M. Manasevit
- 👤 William I. Simpson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:09
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/127; C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B25/20; C30B25/205; C30B29/00; C30B29/10; C30B29/46; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3236; H10P14/34; H10P14/3402; H10P14/3436; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/057; Y10S148/142; Y10S148/15; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
115 words
A method for forming a layer of Group IVA-VIA material on an amorphous substrate of glass or fused quartz or a monocrystalline or a polycrystalline substrate selected from the group consisting of Group IA - Group VIA compounds, Group II - Group VI compounds Group IIA- Fluorides, Group IIIA - Group VA compounds and Group IV - Group VI compounds, α- Al 2 O 3 and MgAl 2 O 4 , comprising the steps of: establising a heated deposition zone at a temperature within the range 400°-700° C and encompassing a deposition surface of said substrate; forming a gaseous mixture of metalorganic IVA-containing and VIA-containing components; and pyrolyzing said mixture within said heated deposition zone.
Claim 2
Independent Claim
115 words
A method for forming a layer of Group IVA-VIA material on an amorphous substrate of glass or fused quartz or a monocrystalline or a polycrystalline substrate selected from the group consisting of Group IA - Group VIA compounds, Group II - Group VI compounds Group IIA- Fluorides, Group IIIA - Group VA compounds and Group IV - Group VI compounds, α- Al 2 O 3 and MgAl 2 O 4 , comprising the steps of: establising a heated deposition zone at a temperature within the range 400°-700° C and encompassing a deposition surface of said substrate; forming a gaseous mixture of metalorganic IVA-containing and VIA-containing components; and pyrolyzing said mixture within said heated deposition zone.
Claim 3
Dependent Claim
67 words
A method for forming a layer of Group IVA-VIA material on a substrate as defined in claim 1 wherein: the layer of IVA-VIA material is a monocrystalline layer of PbS or PbSe; the Group VIA containing component is selected from H 2 S or H 2 Se; and the Group VIA-containing component is introduced into the heated deposition zone prior to introduction of the Group IVA-containing component.
Claim 4
Dependent Claim
27 words
A method for forming a layer of Group IVA-VIA material on a substrate as defined in claim 1, wherein the substrate is a monocrystalline Group IA-VIIA material.
Claim 5
Dependent Claim
27 words
A method for forming a layer of Group IVA-VIA material on a substrate as defined in claim 1, wherein the substrate is a monocrystalline Group IIA-fluoride material.
Claim 6
Dependent Claim
81 words
A method for forming a layer of Group IVA-VIA semiconductor on a substrate as defined in claim 1, wherein the substrate and layer are monocrystalline, the group IVA-VIA material is selected from lead telluride and lead tin telluride, and the substrate is selected from αAl 2 O 3 and magnesium aluminate, the method further comprising the step of forming a layer of Pb on the deposition surface of the substrate prior to the formation of lead telluride or lead tin telluride.
Claim 7
Dependent Claim
68 words
The method for forming a layer of Group IVA-VIA semiconductor material on a substrate as defined in claim 1, wherein the Group IVA-VIA material is a tin-VIA material and the substrate is selected from αAl 2 O 3 and magnesium aluminate the method further comprising the step of forming a layer of tin on the deposition surface of the substrate prior to the formation of the tin-VIA material.
Claim 8
Dependent Claim
29 words
The method defined in claim 6 wherein the VIA constituent of the tin-VIA material is at least one element selected from the group consisting of sulfide, selenide and telluride.
Claim 9
Independent Claim
163 words
A method for epitaxially forming at least one monocrystalline layer of IVA-VIA semiconductor material on a deposition surface of a monocrystalline substrate selected from the group consisting of Group IA - Group VIA compounds Group II - Group VI compounds, Group IIA - Fluorides, Group IIIA - Group VA compounds and Group IV - Group VI compounds, α- Al 2 O 3 and MgAl 2 O 4 , said IVA constituent being selected from Pb and Sn and said via constituent being selected from S, Se and Te, the method comprising the step of: establishing a heated, deposition zone at a temperature within the range 450° - 650° C and encompassing the deposition surface of the substrate: forming a gaseous mixture of IVA-containing compounds selected from the group consisting of tetraethyllead, tetramethyllead, tetramethyltin, tetraethyltin, and of VIA-containaing compounds selected from the group consisting of dimethyltellurium, H 2 Te, diethyltellurium, hydrogen sulfide, and hydrogen selenide; and pyrolyzng said gaseous mixture within said deposition zone.
Claim 10
Independent Claim
163 words
A method for epitaxially forming at least one monocrystalline layer of IVA-VIA semiconductor material on a deposition surface of a monocrystalline substrate selected from the group consisting of Group IA - Group VIA compounds Group II - Group VI compounds, Group IIA - Fluorides, Group IIIA - Group VA compounds and Group IV - Group VI compounds, α- Al 2 O 3 and MgAl 2 O 4 , said IVA constituent being selected from Pb and Sn and said via constituent being selected from S, Se and Te, the method comprising the step of: establishing a heated, deposition zone at a temperature within the range 450° - 650° C and encompassing the deposition surface of the substrate: forming a gaseous mixture of IVA-containing compounds selected from the group consisting of tetraethyllead, tetramethyllead, tetramethyltin, tetraethyltin, and of VIA-containaing compounds selected from the group consisting of dimethyltellurium, H 2 Te, diethyltellurium, hydrogen sulfide, and hydrogen selenide; and pyrolyzng said gaseous mixture within said deposition zone.
Claim 11
Dependent Claim
52 words
A method for epitaxially forming at least one monocrystalline layer of IVA-VIA semiconductor material on a deposition surface of a monocrystalline substrate as defined in claim 8, wherein the VIA-containing compound is hydrogen sulfide or hydrogen selenide and is introduced into the deposition zone prior to the introduction of the IVA-containing compound.
Claim 12
Dependent Claim
39 words
The method defined in claim 8, further comprising the steps of; varying the ratio of said IVA-containing and VIA-containing compounds in said mixture to form layers of different compositions; and selectively introducing conductivity-type determining impurities into said gaseous mixture.
Claim 13
Dependent Claim
23 words
The method defined in claim 10 wherein the conductivity-type determining impurity is Sb and is supplied by a metalorganic alkyl compound of Sb.
Claim 14
Dependent Claim
27 words
The method defined in claim 10 wherein the monocrystalline substrate is selected from the group consisting of Group IA-VIIA, Group IIA-fluoride, Group IIIA-VA, and Group IIB-VIA materials.
Claim 15
Dependent Claim
11 words
The method recited in claim 1 wherein said substrate is monocrystalline.
Claim 16
Dependent Claim
11 words
The method recited in claim 1 wherein said substrate is polycrystalline.
Claim 17
Dependent Claim
11 words
The method recited in claim 1 wherein said substrate is amorphous.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-01-02 | 1981-07-04 | 1982-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-01-02 | 1985-07-04 | 1986-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-01-02 | 1989-07-04 | 1990-01-03 | $7700.00 | Window Closed / Lapsed |