US4876219A
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Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers
Assignee: Fujitsu Ltd
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Filing: 1989-03-03
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Granted: 1989-10-24
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Expires: 2009-03-03
Abstract
Abstract A method of forming a semiconductor thin layer on a silicon substrate comprising the steps of depositing a first amorphous layer of a compound semiconductor (e.g., GaAs) on the silicon substrate, and growing a first epitaxial layer of the compound semiconductor on the amorphous layer, characterized in that the method comprises the steps of: after the epitaxial growth step, depositing a second amorphous layer of the compound semiconductor on the first epitaxial layer, and growing a second epitaxial layer of the compound semiconductor on the second amorphous layer. The obtained GaAs/Si substrate has a reduced dislocation density.
Inventors
- 👤 Takashi Eshita
- 👤 Fumitake Mieno
- 👤 Yuji Furumura
- 👤 Takuya Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/36; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/072; Y10S148/097; Y10S148/154; Y10S148/169; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
87 words
A method of forming a semiconductor thin layer on a silicon substrate comprising the steps of depositing a first amorphous layer of a compound semiconductor on said silicon substrate, and growing a first epitaxial layer of the compound semiconductor on said amorphous layer, characterized in that said method further comprises the steps of: after said epitaxial growth step, depositing a second amorphous layer of the compound semiconductor on said first epitaxial layer, and growing a second epitaxial layer of the compound semiconductor on said second amorphous layer.
Claim 2
Independent Claim
87 words
A method of forming a semiconductor thin layer on a silicon substrate comprising the steps of depositing a first amorphous layer of a compound semiconductor on said silicon substrate, and growing a first epitaxial layer of the compound semiconductor on said amorphous layer, characterized in that said method further comprises the steps of: after said epitaxial growth step, depositing a second amorphous layer of the compound semiconductor on said first epitaxial layer, and growing a second epitaxial layer of the compound semiconductor on said second amorphous layer.
Claim 3
Dependent Claim
36 words
A method according to claim 1, characterized in that said method further comprises, after said second epitaxial growth step, a step of repeating the deposition of the amorphous layer and the growth of the epitaxial layer.
Claim 4
Dependent Claim
17 words
A method according to claim 1, characterized in that said compound semiconductor is a III-V compound semiconductor.
Claim 5
Dependent Claim
15 words
A method according to claim 3, characterized in that said III-V compound semiconductor is GaAs.
Claim 6
Dependent Claim
31 words
A method according to claim 1, characterized in that said deposition of the amorphous layers and said growth of the epitaxial layers are performed by a metalorganic chemical vapor deposition process.
Claim 7
Dependent Claim
26 words
A method according to claim 5, characterized in that said deposition of the amorphous layers is performed at a temperature of from 350° to 450° C.
Claim 8
Dependent Claim
26 words
A method according to claim 5, characterized in that said growth of the epitaxial layers is performed at a temperature of from 650° to 750° C.
Claim 9
Dependent Claim
30 words
A method according to claim 1, characterized in that said deposition of the amorphous layers and said growth of the epitaxial layers are performed by a molecular beam epitaxy process.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-23 | 1993-04-24 | 1993-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-23 | 1997-04-24 | 1997-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-23 | 2001-04-24 | 2001-10-24 | $7700.00 | Window Closed / Lapsed |