US4707216A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor deposition method and device
Assignee: University of Illinois at Urbana-Champaign
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Filing: 1986-01-24
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Granted: 1987-11-17
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Expires: 2006-01-24
Abstract
Abstract A method is disclosed of epitaxially depositing a semiconductor material on a substrate of different material while accommodating lattice mismatch in a manner that results in improved epitaxially deposited material. In a disclosed embodiment GaAs is epitaxially deposited by molecular beam epitaxy on a silicon substrate having a {100} crystallographic surface tilted in the <001> direction. Improved semiconductor devices, made using the disclosed technique, are also set forth.
Inventors
- 👤 Hadis Morkoc
- 👤 Russ Fischer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:42
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/22; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/048; Y10S148/059; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
54 words
A method of forming a layer of semiconductor material of improved quality, comprising the steps of: providing a single crystalline silicon or germanium substrate having a {100} crystallographic surface tilted in the <001> direction; and expitaxially depositing a different single crystalline semiconductor material over said surface to obtain a layer of said semiconductor material.
Claim 2
Independent Claim
54 words
A method of forming a layer of semiconductor material of improved quality, comprising the steps of: providing a single crystalline silicon or germanium substrate having a {100} crystallographic surface tilted in the <001> direction; and expitaxially depositing a different single crystalline semiconductor material over said surface to obtain a layer of said semiconductor material.
Claim 3
Dependent Claim
18 words
The method as defined by claim 1, wherein said different single crystalline semiconductor material is a III-V semiconductor.
Claim 4
Dependent Claim
18 words
The method as defined by claim 1, wherein said epitaxial depositing step is performed by molecular beam epitaxy.
Claim 5
Dependent Claim
18 words
The method as defined by claim 2, wherein said epitaxial depositing step is performed by molecular beam epitaxy.
Claim 6
Independent Claim
61 words
A method of forming a layer of gallium arsenide of improved quality, comprising the steps of: providing a single crystalline silicon substrate having a {100} crystallographic surface tilted by at least 2.29 degrees in the <001> direction; epitaxially depositing an arsenic prelayer on said surface; and epitaxially depositing gallium arsenide over said arsenic prelayer to obtain a layer of gallium arsenide.
Claim 7
Independent Claim
61 words
A method of forming a layer of gallium arsenide of improved quality, comprising the steps of: providing a single crystalline silicon substrate having a {100} crystallographic surface tilted by at least 2.29 degrees in the <001> direction; epitaxially depositing an arsenic prelayer on said surface; and epitaxially depositing gallium arsenide over said arsenic prelayer to obtain a layer of gallium arsenide.
Claim 8
Dependent Claim
31 words
The method as defined by claim 5, further comprising the steps of epitaxially depositing intervening strained layers of III-V semiconductor material between said arsenic prelayer and said layer of gallium arsenide.
Claim 9
Dependent Claim
18 words
The method as defined by claim 5, wherein said epitaxial depositing steps are performed by molecular beam epitaxy.
Claim 10
Dependent Claim
18 words
The method as defined by claim 6, wherein said epitaxial depositing steps are performed by molecular beam epitaxy.
Claim 11
Dependent Claim
22 words
The method as defined by claim 1, wherein said substrate is silicon, and said different single cyrstalline semiconductor material is gallium arsenide.
References Cited (Backward Citations)
JPS5922320A
Cited
JPS5922319A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-16 | 1991-05-18 | 1991-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-16 | 1995-05-18 | 1995-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-16 | 1999-05-18 | 1999-11-17 | $7700.00 | Window Closed / Lapsed |