US4888202A
Expired / Lapsed
US
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Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
Assignee: NTT Inc
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Filing: 1987-07-23
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Granted: 1989-12-19
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Expires: 2007-07-23
Abstract
Abstract In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.
Inventors
- 👤 Toshiaki Murakami
- 👤 Kazuyuki Moriwaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 01:05
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/14; C23C14/58; C23C14/5826; C23C14/5833; C30; C30B; C30B23/00; C30B23/02; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; H; H10; H10N; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10N30/076; H10N30/079; H10N30/80; H10N30/85; H10N30/853; H10N30/8542; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0381; H10N60/0548; H10N60/0884; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S117/916; Y10S117/918
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
151 words
A method of manufacturing a thin single crystal film of a compound oxide, comprising the steps of: maintaining a vacuum pressure in the order of 10 -9 Torr or less; heating a substrate to a temperature of less than 400° C.; evaporating different types of materials for forming the compound oxide; depositing the evaporated materials on a substrate to form the thin film; generating oxygen ions, the oxygen ion generating step including the steps of generating an oxygen plasma, mass-separating oxygen ions from the accelerated oxygen plasma to separate O + or O 2 + ions, and decelerating the separated oxygen ions to a speed corresponding to energy of 10 to 200 eV; and implanting oxygen ions, decelerated in the decelerating step and having energy of 10 to 200 eV, in the thin film as it is being formed on said substrate while monitoring and controlling the number of oxygen ions.
Claim 2
Independent Claim
151 words
A method of manufacturing a thin single crystal film of a compound oxide, comprising the steps of: maintaining a vacuum pressure in the order of 10 -9 Torr or less; heating a substrate to a temperature of less than 400° C.; evaporating different types of materials for forming the compound oxide; depositing the evaporated materials on a substrate to form the thin film; generating oxygen ions, the oxygen ion generating step including the steps of generating an oxygen plasma, mass-separating oxygen ions from the accelerated oxygen plasma to separate O + or O 2 + ions, and decelerating the separated oxygen ions to a speed corresponding to energy of 10 to 200 eV; and implanting oxygen ions, decelerated in the decelerating step and having energy of 10 to 200 eV, in the thin film as it is being formed on said substrate while monitoring and controlling the number of oxygen ions.
Claim 3
Dependent Claim
33 words
The method according to claim 1, further including the step of neutralizing the O + or O 2 + , which emits electrons to obtain the neutral oxygen particles, after the decelerating step.
Claim 4
Dependent Claim
21 words
The method according to claim 2, wherein the electron emitting step comprises the step of radiating electrons by an electron shower.
Claim 5
Dependent Claim
59 words
The method according to claim 1, wherein the step of depositing the evaporated materials on a substrate to form the thin film includes the step of forming a buffer layer on the substrate, a lattice constant of the buffer layer being an intermediate value between a lattice constant of the substrate and a lattice constant of the thin film.
Claim 6
Dependent Claim
25 words
The method according to claim 1, wherein the substrate comprises a single crystal and is heated to a temperature of about 400° C. or less.
Claim 7
Dependent Claim
38 words
The method according to claim 1, wherein the material evaporating step, the thin film forming step, and the oxygen ion implanting step are repeated a plurality of times to form a multilayered thin film of the compound oxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-18 | 1993-06-19 | 1993-12-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-18 | 1997-06-19 | 1997-12-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-18 | 2001-06-19 | 2001-12-19 | $7700.00 | Window Closed / Lapsed |