Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy

Claim 2

In a method of forming an epitaxial layer of an oxidic high T c superconductor on a substantially lattice matched monocrystalline substrate the improvement which comprises: a) forming a melt wherein the primary phase to crystallize out on cooling of the melt to effect film growth is the phase of the high T c oxidic superconductor, said melt comprising a nutriment composed of oxides of each element of said oxidic superconductor and a non-oxidic flux for said oxides; b) introducing the substrate into the melt; and c) cooling the melt to deposit an epitaxial layer of oxidic superconductor on said substrate.

Claim 3

The method of claim 1, wherein the flux is an alkali halide.

Claim 4

The method of claim 2, wherein the flux is comprised of an alkali halide selected from the group consisting of KCl, KF, NaCl, NaF and combinations thereof.

Claim 5

The method of claim 3, wherein the alkali halide is KCl.

Claim 6

The method of claim 1, wherein the melt is inert to Platinum, non-wetting and has a viscosity of about 0.5 to about 10 centipoise measured at growth temperature.

Claim 7

The method of claim 2, wherein the melt is inert to Platinum, non-wetting and has a viscosity of about 0.5 to about 10 centipoise measured at growth temperature.

Claim 8

The method of claim 3, wherein the melt is inert to Platinum, non-wetting and has a viscosity of about 0.5 to about 10 centipoise measured at growth temperature.

Claim 9

The method of claim 4, wherein the melt is inert to Platinum, non-wetting and has a viscosity of about 0.5 to about 10 centipoise measured at growth temperature.

Claim 10

The method of claim 1, wherein the oxidic superconductor is a 123 superconductor or a 2212 superconductor.

Claim 11

The method of claim 2, wherein the oxidic superconductor is a 123 superconductor or a 2212 superconductor.

Claim 12

The method of claim 3, wherein the oxidic superconductor is a 123 superconductor or a 2212 superconductor.

Claim 13

The method of claim 4, wherein the oxidic superconductor is a 123 superconductor or a 2212 superconductor.

Claim 14

The method of claim 5, wherein the oxidic superconductor is a 123 superconductor or a 2212 superconductor.

Claim 15

The method of claim 6, wherein the oxidic superconductor is a 123 superconductor or a 2212 superconductor.

Claim 16

The method of claim 7, wherein the oxidic superconductor is a 123 superconductor or a 2212 superconductor.

Claim 17

The method of claim 8, wherein the oxidic superconductor is a 123 superconductor or a 2212 superconductor.

Claim 18

In a method of forming an epitaxial layer of an oxidic perovskite-related superconductor on a substantially lattice matched monocrystalline perovskite-type substrate, the improvement which comprises: a) forming a melt wherein the primary phase to crystallize out of the cooling of the melt to effect film growth is the phase of the high T c oxidic superconductor, said melt comprising a nutriment composed of oxides of each element of said oxidic superconductor and a non-oxidic flux for said oxides; b) immersing the substrate into the melt; c) cooling the melt to form a film consisting essentially of said oxidic superconductor on a surface of the substrate; d) withdrawing the substrate from the melt, said substrate having an epitaxial film of oxidic superconductor formed thereon and said film having a residue of flux thereon; and, e) removing said residue of flux from said film.

Claim 19

In a method of forming an epitaxial layer of an oxidic perovskite-related superconductor on a substantially lattice matched monocrystalline perovskite-type substrate, the improvement which comprises: a) forming a melt wherein the primary phase to crystallize out of the cooling of the melt to effect film growth is the phase of the high T c oxidic superconductor, said melt comprising a nutriment composed of oxides of each element of said oxidic superconductor and a non-oxidic flux for said oxides; b) immersing the substrate into the melt; c) cooling the melt to form a film consisting essentially of said oxidic superconductor on a surface of the substrate; d) withdrawing the substrate from the melt, said substrate having an epitaxial film of oxidic superconductor formed thereon and said film having a residue of flux thereon; and, e) removing said residue of flux from said film.

Claim 20

The method of claim 17, wherein the flux is comprised of an alkali halide selected from the group consisting of KCl, KF, NaCl, NaF and combinations thereof.

Claim 21

The method of claim 18, wherein the alkali halide is KCl of KF.

Claim 22

The method of claim 17, wherein the substrate is an orthogallate.

Claim 23

The method of claim 18, wherein the substrate is an orthogallate.

Claim 24

The method of claim 19, wherein the substrate is an orthogallate.

Claim 25

The method of claim 20, wherein the orthogallate is a rare earth orthogallate.

Claim 26

The method of claim 21, wherein the orthogallate is a rare earth orthogallate.

Claim 27

The method of claim 22, wherein the orthogallate is a rare earth orthogallate.

Claim 28

The method of claim 23, wherein the rare earth orthogallate is lanthanum orthogallate.

Claim 29

The method of claim 24, wherein the rare earth orthogallate is lanthanum orthogallate.

Claim 30

The method of claim 25, wherein the rare earth orthogallate is lanthanum orthogallate.

Claim 31

The method of claim 23, wherein the rare earth orthogallate is a rare earth orthogallate of the following formula: R.sub.x La.sub.1-x GaO.sub.3 wherein R is a rare earth element of smaller ionic radius than La and wherein x has a value of from 0.001 to 0.5.

Claim 32

The method of claim 24, wherein the rare earth orthogallate is a rare earth orthogallate of the following formula: R.sub.x La.sub.1-x GaO.sub.3 wherein R is a rare earth element of smaller ionic radius than La and wherein x has a value of from 0.001 to 0.5.

Claim 33

The method of claim 25, wherein the rare earth orthogallate is a rare earth orthogallate of the following formula: R.sub.x La.sub.1-x GaO.sub.3 wherein R is a rare earth element of smaller ionic radius than La and wherein x has a value of from 0.001 to 0.5.

Claim 34

A melt for liquid phase epitaxial growth of High T c oxidic superconductor film on a substantially lattice matched substrate comprising: a) nutriment comprised of oxides of each element of the oxidic superconductor; and b) a flux which does not react with any of the oxides at the growth temperature of the oxidic film, wherein the primary phase to crystallize out on cooling of the melt to effect film growth is the phase of the High T c oxidic superconductor.

Claim 35

A melt for liquid phase epitaxial growth of High T c oxidic superconductor film on a substantially lattice matched substrate comprising: a) nutriment comprised of oxides of each element of the oxidic superconductor; and b) a flux which does not react with any of the oxides at the growth temperature of the oxidic film, wherein the primary phase to crystallize out on cooling of the melt to effect film growth is the phase of the High T c oxidic superconductor.

Claim 36

The melt of claim 32, wherein the flux is an alkali halide.

Claim 37

The melt of claim 33, wherein the alkali halide is selected from the group consisting of KCl, KF, NaCl, NaF and mixtures thereof.

Claim 38

The melt of claim 34, wherein the alkali halide is KF or KCl.

Claim 39

The melt of claim 35, wherein the alkali halide is KCl.

Claim 40

The melt of claim 35, wherein the alkali halide is KF.

Claim 41

The method of claim 5 wherein the non-oxidic flux is present in an amount of from about 5% to about 50% by weight based on the combined weight of nutrient and flux.

Claim 42

The method of claim 6 wherein the non-oxidic flux is present in an amount of from about 5% to about 50% by weight based on the combined weight of nutrient and flux.

Claim 43

The method of claim 7 wherein the non-oxidic flux is present in an amount of from about 5% to about 50% by weight based on the combined weight of nutrient and flux.

Claim 44

The method of claim 8 wherein the non-oxidic flux is present in an amount of from about 5% to about 50% by weight based on the combined weight of nutrient and flux.

Claim 45

The method of claim 5 wherein the non-oxidic flux is present in an amount of up to about 20% by weight based on the combined weight of nutrient and flux.

Claim 46

The method of claim 6 wherein the non-oxidic flux is present in an amount of up to about 20% by weight based on the combined weight of nutrient and flux.

Claim 47

The method of claim 7 wherein the non-oxidic flux is present in an amount of up to about 20% by weight based on the combined weight of nutrient and flux.

Claim 48

The method of claim 8 wherein the non-oxidic flux is present in an amount of up to about 20% by weight based on the combined weight of nutrient and flux.