Monolithic microwave transmitter/receiver

Claim 2

A microwave transmitter comprising: (a) an oscillator, said oscillator including: (i) a power source, and (ii) a resonator (iii) said resonator simultaneously functioning as an antenna; wherein: (iv) said power source is a plurality of diodes; (v) said resonator is a microstrip patch; (vi) said diodes and patch are formed on a single semiconductor substrate; and (vii) at least two of said plurality of diodes are connected to opposite edges of said patch.

Claim 3

The transmitter of claim 1, wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside; (b) said diodes are formed on mesas on said substrate; said diodes are connected to said patch by air bridges; and (d) said diodes are connected to said ground plane through vias in said substrate.

Claim 4

The transmitter of claim 1, wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside; (b) said diodes are formed on mesas on said substrate; (c) said diodes are connected to said patch by air bridges; and (d) said diodes are connected to ground through radial stubs and dc bias lines.

Claim 5

A microwave transmitter comprising: (a) an oscillator, said oscillator including: (b) a power source comprising a plurality of IMPATT diodes biased into breakdown, (c) a resonator comprising a microstrip patch, said diodes and patch being disposed on a single semiconductor substrate, (d) said resonator simultaneously functioning as an antenna, (e) further comprising: a second microstrip patch adjacent said resonator patch; and (f) a varactor connected to said second patch and loading said resonator patch.

Claim 6

A microwave transmitter comprising: (a) an oscillator, said oscillator including: (b) a power source comprising a plurality of IMPATT diodes biased into breakdown, (c) a resonator comprising a microstrip patch, said diodes and patch being disposed on a single semiconductor substrate, (d) said resonator simultaneously functioning as an antenna, (e) further comprising: a second microstrip patch adjacent said resonator patch; and (f) a varactor connected to said second patch and loading said resonator patch.

Claim 7

The transmitter of claim 4, wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside: (b) said varactor is a diode; (c) said diodes are formed on mesas on said substrate; (d) said IMPATT diodes are connected to said resonator patch by air bridges: (e) said varactor diodes are connected to said second patch by air bridges; and (f) said diodes are connected to said ground plane through vias in said substrate.

Claim 8

The transmitter of claim 4, wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside; (b) said varactor is a diode; (c) said diodes are formed on mesas on said substrate; (d) said IMPATT diodes are connected to said resonator patch by air bridges; (e) said varactor diodes are connected to said second patch by air bridges; and (f) said diodes are connected to ground by radial stubs and dc bias lines.

Claim 9

An array microwave transmitter, comprising: (a) a plurality of individual transmitters on a semiconductor substrate; (b) each of said individual transmitters including: i. an oscillator, said oscillator including: ii. a power source and iii. a resonator, iv. said resonator simultaneously functioning as an antenna; wherein: v. said power source is a plurality of diodes; vi. said resonator is a microstrip patch; vii. said diodes and patch are formed on a single semiconductor substrate; and viii. at least two of said plurality of diodes are connected to opposite edges of said patch.

Claim 10

An array microwave transmitter, comprising: (a) a plurality of individual transmitters on a semiconductor substrate; (b) each of said individual transmitters including: i. an oscillator, said oscillator including: ii. a power source and iii. a resonator, iv. said resonator simultaneously functioning as an antenna; wherein: v. said power source is a plurality of diodes; vi. said resonator is a microstrip patch; vii. said diodes and patch are formed on a single semiconductor substrate; and viii. at least two of said plurality of diodes are connected to opposite edges of said patch.

Claim 11

The transmitter of claim 7, wherein: each of said plurality of individual transmitters is separated by a distance approximately equal to a half-wavelength of the desired operating frequency of said array.

Claim 12

The transmitter of claim 7 wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside; (b) said diodes are formed on mesas on said substrate; (c) said diodes are connected to the corresponding said patch by air bridges; and (d) said diodes are connected to said ground plane through vias in said substrate.

Claim 13

The transmitter of claim 7, wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside; (b) said diodes are formed on mesas on said substrate; (c) said diodes are connected to said patch by air bridges; and (d) said diodes are connected to ground through radial stubs and dc bias lines.

Claim 14

A transmitter/receiver, comprising: (a) an oscillator, said oscillator including: (b) a power source and (c) a resonator, (d) said resonator simultaneously functioning as an antenna; (e) a low frequency line connected to said resonator to mix signals received by said antenna by said power source to a low frequency; wherein: (f) said power source is a plurality of; (g) said resonator is a microstrip patch; (h) said diodes and patch are formed on a single semiconductor substrate; and (i) at least two of said plurality of diodes are connected to opposite edges of said patch.

Claim 15

A transmitter/receiver, comprising: (a) an oscillator, said oscillator including: (b) a power source and (c) a resonator, (d) said resonator simultaneously functioning as an antenna; (e) a low frequency line connected to said resonator to mix signals received by said antenna by said power source to a low frequency; wherein: (f) said power source is a plurality of; (g) said resonator is a microstrip patch; (h) said diodes and patch are formed on a single semiconductor substrate; and (i) at least two of said plurality of diodes are connected to opposite edges of said patch.

Claim 16

The transmitter/receiver of claim 11, wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside; (b) said diodes are formed on mesas on said substrate; (c) said diodes are connected to said patch by air bridges; and (d) said diodes are connected to said ground plane through vias in said substrate.

Claim 17

The transmitter/receiver of claim 11, wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside; (b) said diodes are formed on mesas on said substrate; (c) said diodes are connected to said patch by air bridges; and (d) said diodes are connected to ground through radial stubs and dc bias lines.

Claim 18

A transmitter/receiver, comprising: (a) an oscillator, said oscillator including: (b) a power source comprising a plurality of IMPATT diodes biased into breakdown, and (c) a resonator comprising a microstrip patch, said diodes and patch being disposed on a single semiconductor substrate, (d) said resonator simultaneously functioning as an antenna, (e) a low frequency line connected to said resonator to mix signals received by said antenna by said power source to a low frequency, (f) further comprising: a second microstrip patch adjacent said resonator patch; and (g) a varactor connected to said second patch and loading said resonator patch.

Claim 19

A transmitter/receiver, comprising: (a) an oscillator, said oscillator including: (b) a power source comprising a plurality of IMPATT diodes biased into breakdown, and (c) a resonator comprising a microstrip patch, said diodes and patch being disposed on a single semiconductor substrate, (d) said resonator simultaneously functioning as an antenna, (e) a low frequency line connected to said resonator to mix signals received by said antenna by said power source to a low frequency, (f) further comprising: a second microstrip patch adjacent said resonator patch; and (g) a varactor connected to said second patch and loading said resonator patch.

Claim 20

The transmitter/receiver of claim 14, wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside; (b) said varactor is a diode; (c) said diodes are formed on mesas on said substrate; (d) said IMPATT diodes are connected to said resonator patch by air bridges; (e) said varactor diodes are connected to said second patch by air bridges; and (f) said diodes are connected to said ground plane through vias in said substrate.

Claim 21

The transmitter/receiver of claim 14, wherein: (a) said substrate is gallium arsenide with a metallized ground plane on the backside; (b) said varactor is a diode; (c) said diodes are formed on mesas on said substrate; (d) said IMPATT diodes are connected to said resonator patch by air bridges; (e) said varactor diodes are connected to said second patch by air bridges; and (f) said diodes are connected to ground by radial stubs and dc bias lines.